ARRAYRDM-0112A20-QFN-TR1 [ONSEMI]
Silicon Photomultipliers (SiPM), RDM-Series 1 x 12 Monolithic Array;
| 型号： | ARRAYRDM-0112A20-QFN-TR1 |
| 厂家： | 
ONSEMI |
| 描述： | Silicon Photomultipliers (SiPM), RDM-Series 1 x 12 Monolithic Array |
| 文件： | 总6页 (文件大小：2146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Photomultipliers
(SiPM), RDM-Series
1 x 12 Monolithic Array
Advance Information
ArrayRDM-0112A20-QFN
www.onsemi.com
The ArrayRDM−0112A20−QFN is a monolithic 1 × 12 array of
Silicon Photomultiplier (SiPM) pixels based on the market−leading
RDM process. The RDM process has been specifically developed to
create products that give high PDE at the NIR wavelengths used for
LiDAR and 3D ranging applications.
In order to meet the requirements for automotive LiDAR
applications, this product is qualified to AEC−Q102 and developed in
accordance with IATF 16949.
An evaluation board (ArrayRDM−0112A20−GEVB) is also
available for this product.
KEY SENSOR AND PACKAGE SPECIFICATIONS
Parameter
Silicon Process
Number of Pixels
Array Configuration
Pixel Size
Value
RDM
Comments
12
1 × 12
Monolithic silicon array
1.12 × 0.47 mm
0.49 mm
20 mm
Pixel Pitch
Microcell Size
The ArrayRDM−0112A20−QFN Product
Number of
Microcells per Pixel
806
ORDERING INFORMATION
See detailed ordering and shipping information in the ordering
information section on page 4 of this data sheet.
Package Size
5.2 × 10.0 × 1.85 mm
W × L × H
(see case outline on
page 5 for more details)
Output Type
Analog
Standard output per pixel
PERFORMANCE SPECIFICATIONS
Typical values are measured at 21°C. Minimum and Maximum values take
into account operation over the full temperature range of −40°C to 105°C. All measurements made at Vbr + 7.9 V.
Parameter
PDE at 905 nm
Min
8
Typ
14
Max
23
Unit
Comment
%
Total Noise Rate
< 0.05
0.1
40
Mcps Total noise rate is the count of all noise events arising
from thermal noise, crosstalk and afterpulsing. It is
measured by counting distinct event peaks per unit
time with no incident light and minimum threshold set
just above the electronic noise floor. Per pixel
Optical Crosstalk
23
1.1 × 10
24
28
1.2 × 10
34
33
1.4 × 10
45
%
6
6
6
Gain
Microcell Recovery Time Constant
Microcell Rise Time
ns
ps
pF
RC time constant
Per pixel
−
200
20
−
Terminal Capacitance
Peak Pulsed Saturation Current
Continuous Saturation Current
19
22
3.2
−
7.5
mA Per pixel
mA Per pixel
1.4
−
3.4
This document contains information on a new product. Specifications and information herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2019
1
Publication Order Number:
ARRAYRDM−0112A20/D
September, 2020 − Rev. P7
ArrayRDM−0112A20−QFN
BIAS PARAMETERS
Parameter
Min
Typ
Max
Unit
Comment
Breakdown Voltage (Vbr)
19.8
21.6
25.5
V
See Figure 1 for a plot of typical
breakdown voltages at different
temperatures
Typical values recommended for
operation and used for characterization
Over Voltage (Vov)
−
7.9
12.0
V
Operating Bias (Vop)
Vop = Vbr + Vov
Refer to Figure 1
Temperature Coefficient of Vbr
mV/°C
ABSOLUTE MAXIMUM RATINGS
Parameter
Maximum Bias
Value
37.5
Unit
V
Comment
For whole array at typical Vop
Ambient temperature
Maximum Current
20
mA
°C
Maximum Storage Temperature
Operating Temperature Range
125
−40 to +105
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
PACKAGE SPECIFICATIONS
Parameter
Value
1
Unit
kV
Comment
ESD − HBM
ESD − CDM
Class 1C
Class 4C
500
4
V
q
q
°C/W
°C/W
JC
JA
150
3
MSL
For all part numbers
Figure 1. Breakdown Voltage vs Temperature
www.onsemi.com
2
ArrayRDM−0112A20−QFN
PIN ASSIGNMENT
Pin #
Pin Name
Pin Function
PIN 1
1
28
Cathode 1
Cathode 2
Cathode 3
Cathode 4
Cathode 5
Cathode 6
Cathode 7
Cathode 8
Cathode 9
Cathode 10
Cathode 11
Cathode 12
Anode
SiPM 1 standard output
SiPM 2 standard output
SiPM 3 standard output
SiPM 4 standard output
SiPM 5 standard output
SiPM 6 standard output
SiPM 7 standard output
SiPM 8 standard output
SiPM 9 standard output
SiPM 10 standard output
SiPM 11 standard output
SiPM 12 standard output
Common Anode
SiPM 12
SiPM 1
27
26
25
24
TOP VIEW
23
22
21
20
19
EPAD
18
EPAD
2−17
NC
No Connect
BOTTOM VIEW
APPLICATION ADVICE
Cathode 1 Cathode 2
Cathode 12
The ArrayRDM−0112A20−QFN is formed of a linear
array of 12 SiPM pixels. The QFN package provides
a connection to each pixel cathode (for access to the
individual signals) and a common anode. The common
anode allows the provision of a single bias supply for all
12 pixels. The recommended test connections and biasing
are as per the evaluation board that is detailed in the
following section.
SiPM 1
SiPM 2
SiPM 12
Anode
(Common)
Figure 2. Array Schematic Showing Pixel
Connections
www.onsemi.com
3
ArrayRDM−0112A20−QFN
EVALUATION BOARD
The ArrayRDM−0112A20−GEVB evaluation board
consists of:
50 W
50 W
• ArrayRDM−0112A20−DFN SiPM array
• 12 U.FL connectors for access to each pixel cathode for
signal readout
50 W
S1
J1
J2
S2
S12
J12
• An SMA connector for applying the bias to the common
anode
J13
(body)
• Bias filtering circuit
SiPM 1
SiPM 2
SiPM 12
0 V
J13
• Decoupling capacitors (12 x 10 nF and 4 x 100 nF
decoupling capacitors from anode to ground − not shown)
−Vbias
This product allows users to quickly and easily set up an
evaluation of the array product.
Note that a negative bias supply should be suppled via the
SMA connector (J13) and the U.FL connectors (J1 to J12)
should be 50 W terminated.
Figure 4. ArrayRDM−0112A20−GEVB Board
Schematic
Connector
Style
J1–J12
U.FL Receptacle
(Hirose U.FL−R−SMT)
J13
SMA Jack (F)
Figure 3. ArrayRDM−0112A20−GEVB Top Side View
Showing the 1x12 Sensor
ORDERING INFORMATION
Part Number
Product Description
Shipping Format
Tape and Reel
ArrayRDM−0112A20−QFN−TR
ArrayRDM−0112A20−QFN−TR1
ArrayRDM−0112A20−QFN−TR−E
Monolithic 1 × 12 array of NiR sensitive SiPM pixels formed using the
RDM process. Individual cathode connection per pixel and a common
anode available via the 28−pin QFN package.
Cut Tape
Unqualified prototype part of the ArrayRDM−0112A20−QFN−TR
Depends on
Quantity Ordered
ArrayRDM−0112A20−GEVB
Evaluation board consisting of an ArrayRDM−0112A20−QFN
mounted onto PCB.
ESD Package
A U.FL connector gives access to each pixel output (cathode).
The bias is supplied via an SMA connector to the common anode.
www.onsemi.com
4
ArrayRDM−0112A20−QFN
PACKAGE DIMENSIONS
QFN28 10x5.2, 0.65P
CASE 485FZ
ISSUE B
A
B
www.onsemi.com
5
ArrayRDM−0112A20−QFN
EVALUATION BOARD DRAWING
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
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