ATP106-TL-H [ONSEMI]
P 沟道功率 MOSFET -40V,-30A,25mΩ;型号: | ATP106-TL-H |
厂家: | ONSEMI |
描述: | P 沟道功率 MOSFET -40V,-30A,25mΩ |
文件: | 总7页 (文件大小:339K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENA1597A
ATP106
P-Channel Power MOSFET
http://onsemi.com
–
–
Ω
40V, 30A, 25m , Single ATPAK
Features
•
•
•
•
Low ON-resistance
Slim package
Halogen free compliance
Large current
4.5V drive
Protection diode in
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
--40
Unit
V
V
DSS
V
±20
V
GSS
I
--30
A
D
Drain Current (PW 10 s)
I
DP
PW 10 s, duty cycle 1%
--90
A
≤
μ
≤
μ
≤
Allowable Power Dissipation
Channel Temperature
P
Tc=25 C
40
W
°C
°C
mJ
A
°
D
Tch
150
Storage Temperature
Tstg
--55 to +150
30
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
AS
I
AV
--15
Note : 1 V =--10V, L=200 H, I =--15A
*
μ
DD
2 L 200 H, Single pulse
AV
*
≤
μ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: ATPAK
7057-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
ATP106-TL-H
Packing Type: TL
Marking
1.5
6.5
4.6
2.6
0.4
0.4
ATP106
4
LOT No.
TL
Electrical Connection
4,2
2
0.55
1
3
0.8
0.6
1 : Gate
2 : Drain
0.4
2.3
2.3
1
3 : Source
4 : Drain
3
ATPAK
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/N0409PA TKIM TC-00002145 No. A1597-1/7
ATP106
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--40
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=-- 1mA, V =0V
V
μA
μA
V
(BR)DSS
D
GS
=-- 40V, V =0V
I
I
V
V
V
V
-- 1
DSS
DS
GS
DS
DS
GS
=±16V, V =0V
DS
±10
GSS
V
(off)
GS
=-- 10V, I =-- 1mA
--1.5
--2.6
D
Forward Transfer Admittance
| yfs |
=-- 10V, I =--15A
28
S
D
R
R
(on)1
(on)2
I
I
=-- 15A, V =-- 10V
GS
19
29
25
41
mΩ
mΩ
pF
pF
pF
ns
DS
D
D
Static Drain-to-Source On-State Resistance
=-- 8A, V =-- 4.5V
GS
DS
Input Capacitance
Ciss
1380
210
150
12
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--20V, f=1MHz
DS
t
t
t
t
(on)
d
r
120
110
90
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
ns
d
f
ns
Total Gate Charge
Qg
29
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=--20V, V =--10V, I =--30A
GS
6.4
DS
D
5.9
V
SD
I =--30A, V =0V
S GS
--0.97
--1.5
Switching Time Test Circuit
V = --20V
DD
V
IN
0V
--10V
I
= --15A
D
V
IN
R =1.33Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
ATP106
P. G
50Ω
S
Ordering Information
Device
Package
ATPAK
Shipping
3,000pcs./reel
memo
ATP106-TL-H
Pb Free and Halogen Free
No. A1597-2/7
ATP106
I
D
-- V
DS
I
-- V
D GS
--35
--30
--25
--20
--15
--10
--50
--45
--40
--35
--30
--25
--20
--15
--10
Tc=25°C
Single pulse
V
= --10V
DS
Single pulse
--5
0
--5
0
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
IT15122
0
--0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
IT15123
Drain-to-Source Voltage, V
DS
-- V
Gate-to-Source Voltage, V -- V
GS
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
60
55
50
45
40
35
30
25
20
15
60
55
50
45
40
35
30
25
20
15
Single pulse
Tc=25°C
Single pulse
I = --8A
D
--15A
10
5
10
5
--50
--25
0
25
50
75
100
125
150
0
--1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16
Gate-to-Source Voltage, V
GS
-- V
IT15124
Case Temperature, Tc -- °C
IT15125
| yfs | -- I
I
-- V
D
S SD
--100
7
5
7
V
= --10V
V
=0V
DS
GS
5
3
2
Single pulse
Single pulse
3
2
--10
7
5
3
2
--1.0
10
7
7
5
3
2
5
--0.1
7
5
3
2
3
2
--0.01
7
5
3
2
1.0
7
--0.001
2
3
5
7
2
3
5
7
--10
2
3
5
7
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
IT15127
--0.1
--1.0
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
IT15126
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
1000
5
V
V
= --20V
f=1MHz
DD
= --10V
7
5
GS
3
2
3
2
1000
7
5
100
t
f
7
5
3
2
3
2
t (on)
d
100
10
7
7
2
3
5
7
2
3
5
7
--10
2
3
5
7
0
--5
--10
--15
--20
--25
--30
--35
Drain-to-Source Voltage, V -- V
IT15129
DS
--40
--0.1
--1.0
Drain Current, I -- A
IT15128
D
No. A1597-3/7
ATP106
A S O
V
GS
-- Qg
2
--10
--9
--8
--7
--6
--5
--4
--3
--2
V
= --20V
DS
= --30A
I
= --90A
PW≤10μs
DP
--100
I
D
7
5
I
= --30A
D
3
2
--10
7
5
Operation in
this area is
limited by R (on).
3
2
DS
--1.0
7
5
3
2
--1
0
Tc=25°C
Single pulse
--0.1
--0.1
2
3
5
7
2
3
5
7
2
3
5
7
0
5
10
15
20
25
30
IT15130
--1.0
--10
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V
-- V
IT15131
DS
P
-- Tc
E
-- Ta
D
AS
45
40
35
30
25
20
15
10
120
100
80
60
40
20
0
5
0
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
175
IT15133
IT15132
Ambient Temperature, Ta -- °C
Case Temperature, Tc -- °C
No. A1597-4/7
ATP106
Taping Specification
ATP106-TL-H
No. A1597-5/7
ATP106
Outline Drawing
Land Pattern Example
ATP106-TL-H
Mass (g) Unit
Unit: mm
0.266
mm
* For reference
6.5
1.5
2.3
2.3
No. A1597-6/7
ATP106
Note on usage : Since the ATP106 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1597-7/7
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