ATP113-TL-H [ONSEMI]
P 沟道，功率 MOSFET，-60V，-35A，29.5mΩ;
| 型号： | ATP113-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | P 沟道，功率 MOSFET，-60V，-35A，29.5mΩ PC 仪表 |
| 文件： | 总7页 (文件大小：368K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1755A
ATP113
P-Channel Power MOSFET
http://onsemi.com
–
–
Ω
60V, 35A, 29.5m , Single ATPAK
Features
•
•
•
ON-resistance R (on)1=22.5m (typ.)
4V drive
Protection diode in
Input Capacitance Ciss=2400pF(typ.)
Halogen free compliance
Ω
DS
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
--60
±20
--35
--105
50
DSS
V
V
GSS
I
A
D
Drain Current (PW 10 s)
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
P
Tc=25 C
W
°C
°C
mJ
A
°
D
Tch
150
Storage Temperature
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
95
AS
I
--18
AV
--
--
AV
Note : 1 V = 10V, L=500 H, I = 18A
*
μ
DD
2 L 500 H, Single pulse
*
≤
μ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: ATPAK
7057-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
ATP113-TL-H
1.5
6.5
4.6
2.6
Packing Type: TL
Marking
0.4
0.4
4
ATP113
LOT No.
TL
Electrical Connection
2,4
2
0.55
1
3
0.8
0.6
1 : Gate
0.4
2.3
2.3
2 : Drain
3 : Source
4 : Drain
1
ATPAK
3
Semiconductor Components Industries, LLC, 2013
July, 2013
61312 TKIM/72110PA TKIM TC-00002330 No. A1755-1/7
ATP113
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--60
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=-- 1mA, V =0V
V
μA
μA
V
(BR)DSS
D
GS
=-- 60V, V =0V
I
I
V
V
V
V
-- 1
DSS
DS
GS
DS
DS
GS
=±16V, V =0V
DS
±10
GSS
V
(off)
GS
=-- 10V, I =-- 1mA
--1.2
--2.6
D
Forward Transfer Admittance
| yfs |
=-- 10V, I =--18A
37
S
D
R
R
R
(on)1
(on)2
(on)3
I
I
I
=-- 18A, V =-- 10V
GS
22.5
27
29.5
38
mΩ
mΩ
mΩ
pF
pF
pF
ns
DS
DS
DS
D
D
D
Static Drain-to-Source On-State Resistance
=-- 9A, V =-- 4.5V
GS
=-- 5A, V =-- 4V
GS
29
44
Input Capacitance
Ciss
2400
250
195
15
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--20V, f=1MHz
DS
t
t
t
t
(on)
d
r
125
250
200
55
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
ns
d
f
ns
Total Gate Charge
Qg
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=--30V, V =--10V, I =--35A
GS
7.5
DS
D
12
V
SD
I =--35A, V =0V
GS
--0.98
--1.5
S
Switching Time Test Circuit
V = --30V
DD
V
IN
0V
--10V
I
=18A
D
V
IN
R =1.67Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
ATP113
P. G
50Ω
S
Ordering Information
Device
Package
ATPAK
Shipping
3,000pcs./reel
memo
ATP113-TL-H
Pb Free and Halogen Free
No. A1755-2/7
ATP113
I
D
-- V
DS
I
-- V
D GS
--35
--30
--25
--20
--15
--10
--60
--50
--40
--30
--20
Tc=25°C
Single pulse
V
= --10V
DS
Single pulse
--10
0
--5
0
--1.0 --1.5 --2.0 --2.5
0
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0
0
--0.5
--3.0 --3.5 --4.0 --4.5
Drain-to-Source Voltage, V
DS
-- V
Gate-to-Source Voltage, V
-- V
IT15601
IT15602
GS
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
70
60
50
40
30
70
60
50
40
30
20
Tc=25°C
Single pulse
Single pulse
I = --18A
D
--9A
--5A
20
10
10
0
--50
--25
0
25
50
75
100
125
150
--1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16
Gate-to-Source Voltage, V
GS
-- V
Case Temperature, Tc -- °C
IT15603
IT15604
| yfs | -- I
I
-- V
D
S SD
7
5
--100
7
V
=0V
V
= --10V
GS
Single pulse
DS
Single pulse
5
3
2
3
2
--10
7
5
3
2
--1.0
10
7
5
7
5
3
2
--0.1
7
5
3
2
3
2
--0.01
7
5
3
2
1.0
--0.001
--0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 --1.3
7
2
3
5
7
2
3
5
7
--10
2
3
5
7
--0.1
--1.0
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
IT15605
IT15606
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
1000
7
5
V
V
= --30V
= --10V
f=1MHz
DD
GS
7
5
3
2
3
2
t
f
1000
100
7
5
7
5
3
2
3
2
t (on)
d
10
100
7
7
2
3
5
7
2
3
5
7
2
3
5
7
0
--10
--20
--30
--40
--50
--60
IT15608
--0.1
--1.0
--10
--10
Drain Current, I -- A
Drain-to-Source Voltage, V -- V
DS
IT15607
D
No. A1755-3/7
ATP113
A S O
V
GS
-- Qg
--10
--9
--8
--7
--6
--5
--4
--3
--2
3
2
V
= --30V
DS
= --35A
I
I
= --105A (PW≤10μs)
DP
I
D
--100
7
5
= --35A
D
3
2
--10
7
5
3
2
Operation in
this area is
limited by R (on).
--1.0
DS
7
5
3
2
--1
0
Tc=25°C
Single pulse
--0.1
--0.1
2
3
5
7
2
3
5
7
2
3
5
7
0
10
20
30
40
50
60
IT15609
--1.0
--10
--100
IT15610
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V
-- V
DS
P
-- Tc
E
-- Ta
D
AS
60
50
40
30
20
120
100
80
60
40
20
0
10
0
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
175
IT15179
Ambient Temperature, Ta -- °C
Case Temperature, Tc -- °C
IT15611
No. A1755-4/7
ATP113
Taping Specification
ATP113-TL-H
No. A1755-5/7
ATP113
Outline Drawing
Land Pattern Example
ATP113-TL-H
Mass (g) Unit
Unit: mm
0.266
mm
* For reference
6.5
1.5
2.3
2.3
No. A1755-6/7
ATP113
Note on usage : Since the ATP113 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1755-7/7
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