ATP216-TL-H [ONSEMI]
N-Channel Power MOSFET, 50V, 35A, 23mOhm, Single ATPAK;
| 型号： | ATP216-TL-H |
| 厂家： | 
ONSEMI |
| 描述： | N-Channel Power MOSFET, 50V, 35A, 23mOhm, Single ATPAK |
| 文件： | 总7页 (文件大小：376K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN8985A
ATP216
N-Channel Power MOSFET
http://onsemi.com
Ω
50V, 35A, 23m , Single ATPAK
Features
•
•
•
•
•
ON-resistance R (on)1=17m (typ.)
1.8V drive
Protection diode in
Slim package
Halogen free compliance
Ω
DS
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
50
DSS
V
±10
V
GSS
I
35
A
D
Drain Current (PW 10 s)
I
DP
PW 10 s, duty cycle 1%
105
A
≤
μ
≤
μ
≤
Allowable Power Dissipation
Channel Temperature
P
Tc=25 C
40
150
W
°
D
Tch
C
C
°
°
Storage Temperature
Tstg
--55 to +150
40
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
mJ
A
AS
I
AV
17.5
Note : 1 V =10V, L=100 H, I =18A
*
μ
DD
2 L 100 H, Single pulse
AV
*
≤
μ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: ATPAK
7057-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
ATP216-TL-H
1.5
6.5
4.6
2.6
Packing Type: TL
Marking
0.4
0.4
ATP216
4
LOT No.
TL
Electrical Connection
2,4
2
0.55
1
3
0.8
0.6
1 : Gate
0.4
2.3
2.3
2 : Drain
3 : Source
4 : Drain
1
3
ATPAK
Semiconductor Components Industries, LLC, 2013
July, 2013
62012 TKIM/51111PA TKIM TC-00002591 No.8985-1/7
ATP216
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
50
V
μA
μA
V
(BR)DSS
D
GS
=50V, V =0V
I
I
V
V
V
V
1
DSS
DS
GS
DS
DS
GS
=±8V, V =0V
DS
±10
1.4
GSS
V
(off)
GS
=10V, I =1mA
0.4
D
Forward Transfer Admittance
| yfs |
=10V, I =18A
58
S
D
R
R
R
(on)1
(on)2
(on)3
I
I
I
=18A, V =4.5V
GS
17
20
23
28
45
mΩ
mΩ
mΩ
pF
pF
pF
ns
DS
DS
DS
D
D
D
Static Drain-to-Source On-State Resistance
=9A, V =2.5V
GS
=5A, V =1.8V
GS
30
Input Capacitance
Ciss
2700
150
110
27
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=20V, f=1MHz
DS
t (on)
d
t
90
ns
r
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
t (off)
d
220
105
30
ns
t
ns
f
Total Gate Charge
Qg
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=30V, V =4.5V, I =35A
GS
5.9
DS
D
7.9
V
SD
I =35A, V =0V
GS
0.96
1.2
S
Switching Time Test Circuit
V
IN
V =30V
DD
4.5V
0V
I =18A
D
V
IN
R =1.67Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
ATP216
P. G
50Ω
S
Ordering Information
Device
Package
ATPAK
Shipping
3,000pcs./reel
memo
ATP216-TL-H
Pb Free and Halogen Free
No.8985-2/7
ATP216
I
D
-- V
DS
I
-- V
D GS
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
Tc=25°C
V
=10V
DS
2.0V
5
0
V
=1.5V
GS
5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
IT16431
Drain-to-Source Voltage, V
-- V
IT16430
Gate-to-Source Voltage, V -- V
GS
DS
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
60
50
40
30
20
60
50
40
30
20
Tc=25°C
I =5A
D
9A
18A
10
0
10
0
0
1
2
3
4
5
6
7
8
--60 --40 --20
0
20
40
60
80 100 120 140 160
Gate-to-Source Voltage, V
-- V
Case Temperature, Tc -- °C
IT16433
IT16432
GS
| yfs | -- I
I
-- V
D
S SD
100
100
7
5
V
=0V
V
=10V
GS
DS
7
5
3
2
10
7
5
3
2
3
2
1.0
7
5
3
2
10
7
0.1
7
5
5
3
2
3
2
0.01
7
5
3
2
0.001
1.0
0.1
2
3
5
7
2
3
5
7
2
3
5
7
100
0
0.2
0.4
0.6
0.8
1.0
1.2
IT16435
1.0
10
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
IT16434
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
10000
1000
V
=30V
=4.5V
f=1MHz
DD
7
5
7
5
V
GS
Ciss
3
2
3
2
100
1000
7
5
7
5
3
2
3
2
10
100
7
5
7
5
3
2
3
2
10
1.0
0.1
0
10
20
30
40
50
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
100
IT16436
Drain Current, I -- A
Drain-to-Source Voltage, V
DS
-- V
IT16437
D
No.8985-3/7
ATP216
A S O
V
-- Qg
GS
1000
5
4
3
2
7
V
=30V
DS
=35A
5
I
D
3
2
I
=105A (PW≤10μs)
DP
100
7
5
I
=35A
D
3
2
10
7
5
3
2
Operation in
this area is
1.0
7
5
limited by R (on).
DS
1
0
3
2
Tc=25°C
Single pulse
0.1
0.1
0
5
10
15
20
25
30
IT16438
2
3
5
7
2
3
5
7
2
3
5 7
100
IT16439
1.0
10
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V -- V
DS
P
-- Tc
E
-- Ta
D
AS
45
40
35
30
25
20
15
10
120
100
80
60
40
20
0
5
0
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
175
IT16441
IT16440
Ambient Temperature, Ta -- °C
Case Temperature, Tc -- °C
No.8985-4/7
ATP216
Taping Specification
ATP216-TL-H
No.8985-5/7
ATP216
Outline Drawing
Land Pattern Example
ATP216-TL-H
Mass (g) Unit
Unit: mm
0.266
mm
* For reference
6.5
1.5
2.3
2.3
No.8985-6/7
ATP216
Note on usage : Since the ATP216 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.8985-7/7
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