BAS16LT1 [ONSEMI]
Switching Diode; 开关二极管
| 型号： | BAS16LT1 |
| 厂家： | 
ONSEMI |
| 描述： | Switching Diode |
| 文件： | 总4页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAS16LT1
Preferred Device
Switching Diode
Features
• Pb−Free Package is Available
MAXIMUM RATINGS
http://onsemi.com
Rating
Symbol
Value
75
Unit
Vdc
Continuous Reverse Voltage
Peak Forward Current
V
R
I
F
200
500
mAdc
mAdc
3
1
CATHODE
ANODE
Peak Forward Surge Current
I
FM(surge)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
MARKING
DIAGRAM
3
THERMAL CHARACTERISTICS
1
Characteristic
Symbol
Max
Unit
A6 D
2
Total Device Dissipation FR−5 Board
(Note 1)
P
D
SOT−23
CASE 318
STYLE 8
225
1.8
mW
T = 25°C
A
Derate above 25°C
mW/°C
A6
D
= Specific Device Code
= Date Code
Thermal Resistance,
Junction−to−Ambient
R
556
°C/W
q
JA
Total Device Dissipation
P
D
Alumina Substrate, (Note 2)
300
2.4
mW
ORDERING INFORMATION
T = 25°C
A
†
Derate above 25°C
mW/°C
Device
Package
Shipping
Thermal Resistance,
Junction−to−Ambient
BAS16LT1
SOT−23
3000/Tape & Reel
R
417
°C/W
°C
q
JA
BAS16LT3G
SOT−23
3000/Tape & Reel
Junction and Storage Temperature
T , T
J
−55 to +150
stg
(Pb−Free)
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
May, 2004 − Rev. 3
BAS16LT1/D
BAS16LT1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Reverse Voltage Leakage Current
I
R
mAdc
(V = 75 Vdc)
−
−
−
1.0
50
30
R
(V = 75 Vdc, T = 150°C)
R
J
(V = 25 Vdc, T = 150°C)
R
J
Reverse Breakdown Voltage
(I = 100 mAdc)
BR
V
75
−
Vdc
mV
(BR)
Forward Voltage
V
F
(I = 1.0 mAdc)
−
−
−
−
715
855
1000
1250
F
(I = 10 mAdc)
F
(I = 50 mAdc)
F
(I = 150 mAdc)
F
Diode Capacitance
(V = 0, f = 1.0 MHz)
R
C
−
−
−
−
2.0
1.75
6.0
45
pF
Vdc
ns
D
Forward Recovery Voltage
V
FR
(I = 10 mAdc, t = 20 ns)
F
r
Reverse Recovery Time
(I = I = 10 mAdc, R = 50 W)
t
rr
F
R
L
Stored Charge
Q
pC
S
(I = 10 mAdc to V = 5.0 Vdc, R = 500 W)
F
R
L
820 W
I
F
+10 V
t
r
t
p
t
2.0 k
0.1 mF
I
F
t
t
100 mH
rr
10%
90%
0.1 mF
D.U.T.
i
= 1.0 mA
R(REC)
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
I
R
SAMPLING
OSCILLOSCOPE
V
R
OUTPUT PULSE
INPUT SIGNAL
(I = I = 10 mA; MEASURED
F
R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2
BAS16LT1
10
100
10
T = 150°C
A
T = 85°C
A
T = 125°C
A
1.0
T = −ꢀ40°C
A
T = 85°C
A
0.1
0.01
T = 55°C
1.0
0.1
A
T = 25°C
A
T = 25°C
A
0.001
50
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
0.64
0.60
0.56
0.52
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Capacitance
http://onsemi.com
3
BAS16LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)]
CASE 318−09
ISSUE AI
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
3
B
S
4. 318−01, −02, AND −06 OBSOLETE, NEW
STANDARD 318−09.
1
2
INCHES
MILLIMETERS
DIM
A
B
C
D
G
H
J
MIN
0.1102
MAX
0.1197
MIN
2.80
1.20
0.99
0.36
1.70
0.10
0.085
0.45
0.89
2.10
0.45
MAX
3.04
1.40
1.26
0.50
2.10
0.25
0.177
0.60
1.02
2.50
0.60
V
G
0.0472 0.0551
0.0385 0.0498
0.0140 0.0200
0.0670 0.0826
0.0040 0.0098
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
C
J
H
K
L
S
K
D
V
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
BAS16LT1/D
相关型号：
©2020 ICPDF网 联系我们和版权申明