BAT42XV2 [ONSEMI]
肖特基势垒二极管;
| 型号： | BAT42XV2 |
| 厂家： | 
ONSEMI |
| 描述： | 肖特基势垒二极管 光电二极管 |
| 文件： | 总3页 (文件大小：102K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Schottky Barrier Diodes
BAT43XV2
ELECTRICAL SYMBOL
Cathode
Anode
Features
• Low Forward Voltage Drop
2
• Flat Lead, Surface Mount Device at 0.60 mm Height
• Extremely Small Outline Plastic Package SOD−523
• Moisture Level Sensitivity 1
1
SOD−523
CASE 502−01
• Matte Tin (Sn) Lead Finish
• Green Mold Compound
MARKING DIAGRAM
• This Device is Pb−Free and is RoHS Compliant
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
7B M
Symbol
Parameter
Value
Unit
V
1
2
V
RRM
Maximum Repetitive Reverse Voltage
Maximum DC Blocking Voltage
Average Rectified Forward Current
Peak Forward Surge Current
Operating Junction Temperature
Storage Temperature Range
30
V
30
200
V
(Band Indicates Cathode)
R
I
mA
A
F(AV)
7B
M
= Specific Device Code
= Date Code
I
4
FSM
T
+125
°C
°C
J
T
−65 to +125
STG
ORDERING INFORMATION
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
†
Device
BAT43XV2
Package
Shipping
SOD−523
(Pb−Free)
8000 /
Tape & Reel
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Symbol
Parameter
Power Dissipation
Value
200
Unit
mW
P
D
R
Thermal Resistance,
Junction to Ambient
500
°C/W
θ
JA
NOTE: Device mounted on FR−4 PCB minimum land pad.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
BV
Parameter
Breakdown Voltage
Test Conditions
= 100 mA
R
Min
Typ
Max
Unit
V
I
30
R
I
Reverse Leakage Current
Forward Voltage
V
= 25 V
500
nA
V
R
R
V
I = 2 mA
0.26
0.33
0.45
1.0
F
F
I = 15 mA
F
I = 200 mA
F
T
Reverse Recovery Time
Capacitance
I = I = 10 mA, R = 100 W,
RR
5
7
nS
pF
RR
F
I
R
L
= 1 mA
C
V = 1 V, f = 1 MHz
R
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
© Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
April, 2022 − Rev. 1
BAT43XV2/D
BAT43XV2
TYPICAL PERFORMANCE CHARACTERISTICS
6
5
1000
10
125°C
10
100
4
75°C
10
125°C
3
10
10
10
1
75°C
25°C
2
25°C
1
10
10
−25°C
0
−25°C
−1
10
0.1
0
100 200 300 400 500 600 700 800
V , Forward Voltage (mV)
0
5
10
15
20
25
30
35
40
V , Reverse Voltage (V)
R
F
Figure 1. Reverse Current vs Reverse Voltage
Figure 2. Forward Voltage vs Forward Current
250
200
150
100
20
15
10
5
T = 25°C
A
f = 1 MHz
50
0
0
0
5
10
15
20
25
30
35
40
0
25
50
75
100
125
150
V , Reverse Voltage (V)
R
T , Temperature (5C)
A
Figure 3. Total Capacitance
Figure 4. Power Derating Curve
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2
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