BAV21 [ONSEMI]
高压通用型二极管;
| 型号： | BAV21 |
| 厂家： | 
ONSEMI |
| 描述： | 高压通用型二极管 高压 二极管 |
| 文件： | 总5页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Small Signal Diode
BAV19
ABSOLUTE MAXIMUM RATINGS
A
AXIAL LEAD
(DO−35)
CASE 017AG
(T = 25°C unless otherwise noted) (Notes 1, 2, 3)
Symbol
Parameter
Value
120
Units
V
V
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
RRM
(Color Band Denotes Cathode)
I
200
mA
A
F(AV)
MARKING DIAGRAM
I
Non−repetitive Peak Forward Surge
Current
FSM
Pulse Width = 1.0 s
Pulse Width = 1.0 ms
1.0
4.0
T
Storage Temperature Range
−65 to +200
°C
°C
STG
T
J
Operating Junction Temperature
175
BA
V1
9
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are limiting values above which the serviceability of the diode
may be impaired.
CATHODE
BAND
2. These ratings are based on a maximum junction temperature of 200°C.
3. These are steady limits. The factory should be consulted on applications
involving pulsed or low duty cycle operations.
THERMAL CHARACTERISTICS
BAV19
= Specific Device Code
Symbol
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Value
500
Units
mW
ORDERING INFORMATION
P
D
R
300
°C/W
†
q
JA
Device
BAV19TR
Package
Shipping
DO−35
(Pb−Free)
10,000 Units /
Tape & Reel
ELECTRICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Symbol Parameter
Test Conditions
= 100 mA
R
Min
Max
Units
V
R
Breakdown
Voltage
I
120
−
V
V
F
Forward
Voltage
I = 100 mA
F
−
−
1.0
1.25
V
F
I = 200 mA
I
R
Reverse
Current
V
R
V
R
= 100 V
−
−
100
100
nA
mA
= 100 V, T = 150°C
A
C
Total
V
= 0, f = 1.0 MHz
−
5.0
pF
ns
T
R
Capacitance
t
rr
Reverse
Recovery
Time
I = I = 30 mA,
−
50
F
RR
R
I
= 3.0 mA,
R = 100 W
L
Product parametric performance is indicated in the Electrical Characteristics for
the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different
conditions.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
June, 2023 − Rev. 2
BAV19/D
BAV19
TYPICAL CHARACTERISTICS
325
300
275
50
T = 25°C
T = 25°C
A
A
GENERAL RULE: The Reverse Current of a diode
will approximately double for every ten (10) Degree C
increase in Temperature.
40
30
20
10
0
3
5
10
20
30
50
100
55
100
I , Reverse Current (mA)
R
V , Reverse Voltage (V)
R
Figure 1. Reverse Voltage vs. Reverse Current
V − 1.0 to 100 mA
Figure 2. Reverse Current vs. Reverse Voltage
R − 55 to 205 V
B
I
T = 25°C
A
100
90
80
70
60
50
40
30
20
T = 25°C
T = 25°C
A
A
450
400
350
300
250
GENERAL RULE: The Reverse Current of a diode
will approximately double for every ten (10) Degree C
increase in Temperature.
180
200
220
V , Reverse Voltage (V)
240
255
1
2
3
5
10
20 30
50
100
I , Forward Current (mA)
R
F
Figure 3. Reverse Current vs. Reverse Voltage
R − 180 to 225 V
Figure 4. Forward Voltage vs. Forward Current
I
VF − 1.0 to 100 mA
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
T = 25°C
T = 25°C
A
A
700
650
600
550
500
450
0.1
0.2 0.3 0.5
1
2
3
5
10
10
20 30
50
100
200 300 500 800
I , Forward Current (mA)
F
I , Forward Current (mA)
F
Figure 5. Forward Voltage vs. Forward Current
Figure 6. Forward Voltage vs. Forward Current
VF − 0.1 to 10 mA
VF − 10 to 800 mA
www.onsemi.com
2
BAV19
TYPICAL CHARACTERISTICS (continued)
900
800
700
600
500
400
300
200
100
1.3
T = 25°C
A
5
T = −40°C
1.2
1.1
1.0
0.9
0.8
A
T = 25°C
A
T = 80°C
A
0.001 0.003 0.01 0.03
0.1
0.3
1
3
10
0
2
4
6
8
10
12
14
V , Reverse Voltage (V)
R
I , Forward Current (mA)
F
Figure 7. Forward Voltage vs. Ambient Temperature
Figure 8. Total Capacitance
VF − 0.1 mA − 10 mA (−40 to +805C)
400
300
50
40
30
200
100
I
− Average Rectified Current (mA)
F(AV)
I = I = 30 mA
F
R
R
= 100 W
loop
0
20
1.0
1.5
2.0
2.5
3.0
0
50
100
150
I , Reverse Recovery Current (mA)
T , Ambient Temperature (5C)
Figure 10. Average Rectified Current (IF(AV)) vs.
Ambient Temperature (TA)
rr
A
Figure 9. Reverse Recovery Time vs. Reverse
Recovery Current
500
400
300
200
100
0
DO−35 Pkg
SOT−23 Pkg
0
50
100
150
200
I , Average Temperature (5C)
O
Figure 11. Power Derating Curve
www.onsemi.com
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 017AG
ISSUE O
DATE 31 AUG 2016
T50 = 25.40 MIN (2X)
T26 = 14.00 MIN (2X)
4.56
3.05
0.533
0.460
NOTES: UNLESS OTHERWISE SPECIFIED
A) PACKAGE STANDARD REFERENCE:
JEDEC DO−204, VARIATION AH.
B) HERMETICALLY SEALED GLASS PACKAGE.
C) PACKAGE WEIGHT IS 0.137 GRAM.
D) ALL DIMENSIONS ARE IN MILLIMETERS.
1.91
1.53
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13443G
AXIAL LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
BAV21-AP
Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, ROHS COMPLIANT, GLASS PACKAGE-2
MCC
©2020 ICPDF网 联系我们和版权申明