BAV23S [ONSEMI]
高电压通用二极管;
| 型号： | BAV23S |
| 厂家： | 
ONSEMI |
| 描述： | 高电压通用二极管 光电二极管 |
| 文件： | 总6页 (文件大小：188K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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Small Signal Diode
3
1
BAV23S
2
SOT−23 (TO−236)
ABSOLUTE MAXIMUM RATINGS
A
CASE 318
(T = 25°C unless otherwise noted)
Symbol
Parameter
Value
250
Unit
V
CONNECTION DIAGRAM
V
RRM
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
3
I
200
mA
A
F(AV)
I
Non−repetitive Peak Forward Surge
Current
FSM
Pulse Width = 1.0 ms
Pulse Width = 100 ms
9.0
3.0
1
2
T
Storage Temperature Range
−55 to +150
°C
°C
STG
T
J
Operating Junction Temperature
150
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
L30M G
G
THERMAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
1
A
L30 = Specific Device Code
Symbol
Parameter
Value
350
Unit
mW
M
= Date Code
P
D
Power Dissipation
G
= Pb−Free Package
(Note: Microdot may be in either location)
R
Thermal Resistance, Junction−to−Ambient
357
°C/W
q
JA
ORDERING INFORMATION
ELECTRICAL CHARACTERISTICS
A
(T = 25°C unless otherwise noted)
†
Device
BAV23S
Package
Shipping
Symbol Parameter
Test Conditions
= 100 mA
R
Min
Max
Unit
SOT−23
3,000 Units /
Tape & Reel
B
V
Breakdown
Voltage
I
250
−
V
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
Forward
Voltage
I = 100 mA
−
−
−
−
−
1.0
1.25
100
100
50
V
V
F
F
I = 200 mA
F
I
R
Reverse
Leakage
V
= 250 V
nA
mA
ns
R
R
V
= 250 V, T = 150°C
A
t
rr
Reverse
Recovery
Time
I = I = 30 mA,
F
RR
R
I
= 3.0 mA,
R = 100 W
L
Product parametric performance is indicated in the Electrical Characteristics for
the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different
conditions.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
June, 2023 − Rev. 2
BAV23S/D
BAV23S
TYPICAL PERFORMANCE CHARACTERISTICS
325
300
275
50
T = 25°C
A
T = 25°C
A
GENERAL RULE: The Reverse Current of a diode
will approximately double for every ten (10) Degree C
increase in Temperature.
40
30
20
10
0
3
5
10
20
30
50
100
55
75
95
115 135 155 175 195
I , Reverse Current (mA)
R
V , Reverse Voltage (V)
R
Figure 1. Reverse Voltage vs. Reverse Current
V − 1.0 to 100 mA
Figure 2. Reverse Current vs. Reverse Voltage
R − 55 to 205 V
B
I
100
90
80
70
60
50
40
30
20
T = 25°C
T = 25°C
A
A
450
400
350
300
250
GENERAL RULE: The Reverse Current of a diode
will approximately double for every ten (10) Degree C
increase in Temperature.
180
200
220
240
255
1
2
3
5
10
20 30
50
100
V , Reverse Voltage (V)
R
I , Forward Current (mA)
F
Figure 3. Reverse Current vs. Reverse Voltage
R − 180 to 225 V
Figure 4. Forward Voltage vs. Forward Current
I
VF − 1.0 to 100 mA
725
700
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
T = 25°C
T = 25°C
A
A
650
600
550
500
450
0.1
0.2 0.3 0.5
1
2
3
5
10
10
20 30
50
100
200 300 500 800
I , Forward Current (mA)
F
I , Forward Current (mA)
F
Figure 5. Forward Voltage vs. Forward Current
Figure 6. Forward Voltage vs. Forward Current
VF − 0.1 to 10 mA
VF − 10 to 800 mA
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2
BAV23S
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
900
800
700
600
500
400
300
200
100
1.3
T = 25°C
A
T = −40°C
A
1.2
1.1
1.0
0.9
0.8
T = 25°C
A
T = 80°C
A
0.001 0.003 0.01 0.03
0.1
0.3
1
3
10
0
2
4
6
8
10
12
14 15
Reverse Voltage (V)
I , Forward Current (mA)
F
Figure 7. Forward Voltage vs. Ambient Temperature
Figure 8. Capacitance vs. Reverse Voltage
VF − 1.0 mA − 10 mA (−40 to +805C)
400
300
250
300
200
200
150
100
100
50
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T , Ambient Temperature (5C)
Figure 9. Power Derating Curve
T , Ambient Temperature (5C)
Figure 10. Average Rectified Current (IO) vs.
Ambient Temperature (TA)
A
A
50
40
30
20
I = I = 30 mA
F
R
R
= 100 W
loop
1
1.5
2
2.5
3
I , Reverse Recovery Current (mA)
rr
Figure 11. Reverse Recovery Time vs. Reverse
Recovery Current (Irr)
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
SCALE 4:1
GENERIC
MARKING DIAGRAM*
XXXMG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1. EMITTER
2. BASE
STYLE 8:
PIN 1. BASE
PIN 1. ANODE
2. EMITTER
3. COLLECTOR
2. NO CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
STYLE 10:
STYLE 11:
PIN 1. ANODE
2. CATHODE
STYLE 12:
STYLE 13:
PIN 1. SOURCE
2. DRAIN
STYLE 14:
PIN 1. CATHODE
2. GATE
PIN 1. DRAIN
2. SOURCE
3. GATE
PIN 1. CATHODE
2. CATHODE
3. ANODE
3. CATHODE
3. CATHODE−ANODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. CATHODE
2. ANODE
PIN 1. GATE
2. CATHODE
3. ANODE
PIN 1. ANODE
2. CATHODE
3. CATHODE
PIN 1. NO CONNECTION PIN 1. CATHODE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE−ANODE
3. CATHODE
3. GATE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1. ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1. GATE
2. SOURCE
3. DRAIN
PIN 1. RETURN
2. OUTPUT
3. INPUT
PIN 1. GATE
2. DRAIN
PIN 1. ANODE
2. CATHODE
3. GATE
PIN 1. CATHODE
2. ANODE
3. SOURCE
3. NO CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
PIN 1. ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
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