BBL4001-1E [ONSEMI]
N 沟道，功率 MOSFET，60V，74A，6.1mΩ;
| 型号： | BBL4001-1E |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，功率 MOSFET，60V，74A，6.1mΩ |
| 文件： | 总5页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1356A
BBL4001
N-Channel Power MOSFET
http://onsemi.com
Ω
60V, 74A, 6.1m , TO-220F-3SG
Features
•
ON-resistance R (on)1=4.7m (typ.)
Input capacitance Ciss=6,900pF(typ.)
4V drive
Ω
DS
•
•
Specifications
TO-220F-3SG
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
60
±20
74
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
296
2.0
35
A
≤
μ
≤
DP
W
W
Allowable Power Dissipation
P
D
Tc=25 C
°
Junction Temperature
Tj
150
C
C
°
°
Storage Temperature
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
370
65
mJ
A
AS
I
AV
Note : 1 V =30V, L=100 H, I =65A(Fig.1)
*
μ
DD
2 L 100 H, Single pulse
AV
*
≤
μ
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
V
I
=1mA, V =0V
60
V
μA
μA
V
(BR)DSS
D
GS
=60V, V =0V
I
I
V
V
V
V
1
DSS
DS
GS
DS
DS
GS
=±16V, V =0V
DS
±10
2.6
GSS
V
(th)
=10V, I =1mA
1.2
32
GS
FS
D
Forward Transconductance
g
=10V, I =37A
53
S
D
R
R
(on)1
I
I
=37A, V =10V
GS
4.7
7.0
6.1
9.8
mΩ
mΩ
pF
pF
pF
ns
DS
DS
D
D
Static Drain to Source On-State Resistance
(on)2
=37A, V =4V
GS
Input Capacitance
Ciss
6900
740
540
48
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=20V, f=1MHz
DS
t
t
t
t
(on)
d
r
300
510
340
135
18
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
ns
d
f
ns
Total Gate Charge
Qg
nC
nC
nC
V
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=30V, V =10V, I =74A
GS
DS
D
32
V
SD
I =74A, V =0V
GS
1.0
1.2
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2014
April, 2014
40214 TKIM TC-00003095 / N2608QA TI IM TC-00001754 No. A1356-1/5
BBL4001
I
D
-- V
DS
I
-- V (th)
D GS
150
120
90
150
120
90
Tc=25°C
V
=10V
DS
60
60
30
0
30
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Drain to Source Voltage, V
DS
-- V
IT14161
Gate to Source Voltage, V
GS
-- V
IT14162
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
14
12
10
8
16
14
12
10
8
Single pulse
I =37A
D
Single pulse
6
6
4
4
2
0
2
0
--50
--25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
10
Gate to Source Voltage, V
-- V
IT14163
Case Temperature, Tc -- °C
IT14164
GS
g
-- I
I -- V
S SD
FS
D
100
7
3
2
V
=10V
V
=0V
GS
DS
100
Single pulse
7
5
5
3
2
3
2
10
7
5
3
2
1.0
7
5
10
7
3
2
0.1
5
7
5
3
2
3
2
0.01
7
5
3
2
1.0
0.1
0.001
2
3
5
7
2
3
5
7
2
3
5
7
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT14166
1.0
10
100
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
IT14165
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
1000
5
f=1MHz
V
V
=30V
DD
=10V
3
2
7
GS
5
10000
7
5
3
2
3
2
1000
100
7
5
7
5
t (on)
3
2
d
3
0.1
100
2
3
5
7
2
3
5
7
2
3
5
7
0
5
10
15
20
25
30
IT14168
1.0
10
100
IT14167
Drain Current, I -- A
Drain to Source Voltage, V
DS
-- V
D
No. A1356-2/5
BBL4001
S O A
V
GS
-- Qg
7
5
10
9
V
=30V
I
I
=296A
DS
=74A
(PW≤10μs)
DP
3
2
I
D
8
=74A
100
7
5
D
7
3
2
6
Operation in
this area is
limited by R (on).
10
7
5
5
4
DS
3
2
3
1.0
7
5
2
3
2
1
0
Tc=25°C
Single pulse
0.1
0.1
2
3
5
7
2
3
5
7
2
3
5 7
100
IT14170
0
0
0
50
100
150
IT14169
1.0
10
Total Gate Charge, Qg -- nC
Drain to Source Voltage, V
DS
-- V
P
-- Ta
P
-- Tc
D
D
40
35
30
25
20
15
10
2.5
2.0
1.5
1.0
0.5
0
5
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT14158
Case Temperature, Tc -- °C
IT14159
E
-- Ta
AS
120
100
80
60
40
20
0
25
50
75
100
125
150
175
IT14160
Ambient Temperature, Ta -- °C
R
-- Pulse Time
θJC
10
1.0
Duty Cycle=0.5
0.2
0.1
0.05
0.1
0.01
0.001
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
10
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Time, PT -- s
IT17539
No. A1356-3/5
BBL4001
Package Dimensions
BBL4001-1E
TO-220 Fullpack, 3-Lead / TO-220F-3SG
CASE 221AT
ISSUE A
unit : mm
1: Gate
2: Drain
3: Source
Ordering & Package Information
Marking
Electrical Connection
Device
Package
Shipping
memo
2
TO-220F-3SG
SC-67
50
BBL4001-1E
Pb-Free
pcs. / tube
BL4001
1
LOT No.
3
No. A1356-4/5
BBL4001
Fig.1 Unclamped Inductive
Switching Test Circuit
Fig.2 Switching Time Test Circuit
V
IN
V =30V
DD
L
10V
0V
≥50Ω
I
=37A
D
V
IN
R =0.81Ω
L
D
V
OUT
BBL4001
PW=10μs
D.C.≤1%
10V
50Ω
0V
V
DD
G
BBL4001
P. G
50Ω
S
Note on usage : Since the BBL4001 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1356-5/5
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