BC182BRL1G [ONSEMI]
晶体管硅塑料 NPN;
| 型号： | BC182BRL1G |
| 厂家： | 
ONSEMI |
| 描述： | 晶体管硅塑料 NPN 放大器 小信号双极晶体管 |
| 文件： | 总4页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by BC182/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS
2
3
BC BC BC
182 183 184
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Unit
Vdc
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
V
CEO
V
CBO
V
EBO
50
60
30
45
30
45
Vdc
6.0
100
Vdc
Collector Current — Continuous
I
C
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.0
8.0
Watts
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
357
125
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 2.0 mA, I = 0)
V
V
V
(BR)CEO
BC182
BC183
BC184
50
30
30
—
—
—
—
—
—
C
B
Collector–Base Breakdown Voltage
(I = 10 A, I = 0)
V
(BR)CBO
BC182
BC183
BC184
60
45
45
—
—
—
—
—
—
C
E
Emitter–Base Breakdown Voltage
(I = 100 A, I = 0)
V
6.0
—
—
V
(BR)EBO
E
C
Collector Cutoff Current
I
nA
CBO
(V
CB
(V
CB
= 50 V, V
= 30 V, V
= 0)
= 0)
BC182
BC183
BC184
—
—
—
0.2
0.2
0.2
15
15
15
BE
BE
Emitter–Base Leakage Current
(V = 4.0 V, I = 0)
I
—
—
15
nA
EBO
EB
C
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I = 10 µA, V
C CE
h
FE
—
= 5.0 V)
BC182
BC183
BC184
40
40
100
—
—
—
—
—
—
(I = 2.0 mA, V
CE
= 5.0 V)
= 5.0 V)
BC182
BC183
BC184
120
120
250
—
—
—
500
800
800
C
(I = 100 mA, V
C CE
BC182
BC183
BC184
80
80
130
—
—
—
—
—
—
Collector–Emitter On Voltage
(I = 10 mA, I = 0.5 mA)
V
V
V
CE(sat)
—
—
0.07
0.2
0.25
0.6
C
B
(1)
(I = 100 mA, I = 5.0 mA)
C
B
Base–Emitter Saturation Voltage
(1)
—
—
1.2
V
V
BE(sat)
(I = 100 mA, I = 5.0 mA)
C
B
Base–Emitter On Voltage
V
BE(on)
(I = 100 µA, V
= 5.0 V)
= 5.0 V)
= 5.0 V)
—
0.55
—
0.5
0.62
0.83
—
0.7
—
C
CE
CE
CE
(I = 2.0 mA, V
C
(1)
(I = 100 mA, V
C
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
f
T
MHz
(I = 0.5 mA, V
= 3.0 V, f = 100 MHz)
BC182
BC183
BC184
—
—
—
100
120
140
—
—
—
C
CE
(I = 10 mA, V
= 5.0 V, f = 100 MHz)
BC182
BC183
BC184
150
150
150
200
240
280
—
—
—
C
CE
Common Base Output Capacitance
(V = 10 V, I = 0, f = 1.0 MHz)
C
—
—
5.0
pF
pF
—
ob
CB
Common Base Input Capacitance
(V = 0.5 V, I = 0, f = 1.0 MHz)
C
C
—
8.0
—
ib
EB
C
Small–Signal Current Gain
h
fe
(I = 2.0 mA, V
C
= 5.0 V, f = 1.0 kHz)
BC182
BC183
BC184
BC182A
BC182B
125
125
240
125
240
—
—
—
—
—
500
900
900
260
500
CE
Noise Figure
NF
dB
(I = 0.2 mA, V
C
= 5.0 V, R = 2.0 kΩ,
S
CE
f = 1.0 kHz)
(I = 0.2 mA, V
f = 1.0 kHz, f = 200 Hz)
= 5.0 V, R = 2.0 kΩ,
BC184
BC182
BC183
BC184
—
—
—
—
2.0
2.0
2.0
2.0
4.0
10
10
C
CE
S
4.0
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2.0
1.5
1.0
0.9
V
= 10 V
T
= 25
°
C
CE
= 25°C
A
T
A
0.8
0.7
0.6
0.5
0.4
V
@ I /I = 10
C B
BE(sat)
1.0
0.8
V
@ V
CE
= 10 V
BE(on)
0.6
0.4
0.3
0.3
0.2
0.1
0
V
@ I /I = 10
C B
CE(sat)
0.2
0.2
0.5
1.0
I
2.0
5.0
10
20
50
100 200
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.07.0 10
20 30 50 70 100
, COLLECTOR CURRENT (mAdc)
I
, COLLECTOR CURRENT (mAdc)
C
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
10
7.0
5.0
400
300
200
T
= 25°C
A
C
ib
V
T
= 10 V
100
80
CE
= 25
°C
3.0
2.0
A
C
ob
60
40
30
20
1.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50
0.4 0.6 0.8 1.0
2.0
V , REVERSE VOLTAGE (VOLTS)
R
4.0 6.0 8.0 10
20
40
I
, COLLECTOR CURRENT (mAdc)
C
Figure 3. Current–Gain — Bandwidth Product
Figure 4. Capacitances
170
160
150
V
= 10 V
CE
f = 1.0 kHz
= 25
140
130
120
T
°C
A
0.1
0.2 0.3
0.5
1.0
2.0
3.0
5.0
10
I
, COLLECTOR CURRENT (mAdc)
C
Figure 5. Base Spreading Resistance
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
MIN
MILLIMETERS
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
–––
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
D
J
X X
G
H
V
SECTION X–X
C
–––
–––
0.105
0.100
–––
2.66
2.54
–––
1
N
R
V
0.115
0.135
2.93
3.43
N
–––
–––
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
CASE 029–04
(TO–226AA)
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BC182/D
◊
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