BC239CG [ONSEMI]
晶体管硅 NPN;
| 型号： | BC239CG |
| 厂家： | 
ONSEMI |
| 描述： | 晶体管硅 NPN 放大器 晶体管 |
| 文件： | 总4页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC237, BC237B, BC237C,
BC239C
Amplifier Transistors
NPN Silicon
http://onsemi.com
Features
COLLECTOR
1
• Pb−Free Packages are Available*
2
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
V
Vdc
CEO
3
EMITTER
BC237
BC239
45
25
Collector−Emitter Voltage
Collector−Emitter Voltage
Collector Current − Continuous
V
V
Vdc
Vdc
CES
EBO
MARKING
DIAGRAM
BC237
BC239
50
30
BC23
BC237
BC239
6.0
5.0
xy
AYWW G
G
TO−92
CASE 29
STYLE 17
1
I
100
mAdc
C
2
3
Total Power Dissipation @ T = 25°C
P
350
2.8
mW
mW/°C
A
D
Derate above T = 25°C
A
BC23xy = Device Code
x = 7 or 9
Total Power Dissipation @ T = 25°C
P
1.0
8.0
W
mW/°C
A
D
Derate above T = 25°C
y = B or C
A
A
Y
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Operating and Storage Temperature
Range
T , T
−55 to +150
°C
J
stg
WW
G
THERMAL CHARACTERISTICS
Characteristic
(Note: Microdot may be in either location)
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
R
357
°C/W
ORDERING INFORMATION
q
JA
JC
†
Thermal Resistance, Junction−to−Case
R
q
125
°C/W
Device
Package
Shipping
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
BC237
TO−92
5000 Units / Bulk
5000 Units / Bulk
BC237G
TO−92
(Pb−Free)
BC237B
TO−92
5000 Units / Bulk
5000 Units / Bulk
BC237BG
TO−92
(Pb−Free)
BC237BRL1
TO−92
2000/Tape & Reel
2000/Tape & Reel
BC237BRL1G
TO−92
(Pb−Free)
BC237BZL1
TO−92
2000/Ammo Pack
2000/Ammo Pack
BC237BZL1G
TO−92
(Pb−Free)
BC237C
TO−92
5000 Units / Bulk
5000 Units / Bulk
BC237CG
TO−92
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
January, 2006 − Rev. 4
BC237/D
BC237, BC237B, BC237C, BC239C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
BC237
BC239
V
45
25
−
−
−
−
V
V
(BR)CEO
(BR)EBO
(I = 2.0 mA, I = 0)
C
B
Emitter−Base Breakdown Voltage
(I = 100 mA, I = 0)
BC237
BC239
V
6.0
5.0
−
−
−
−
E
C
Collector Cutoff Current
(V = 30 V, V = 0)
I
CES
BC239
BC237
BC239
BC237
−
−
−
−
0.2
0.2
0.2
0.2
15
15
4.0
4.0
nA
CE
BE
(V = 50 V, V = 0)
CE
BE
(V = 30 V, V = 0) T = 125°C
mA
CE
BE
A
A
(V = 50 V, V = 0) T = 125°C
CE
BE
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 10 mA, V = 5.0 V)
C
BC237B
BC237C/239C
BC237
BC237B
BC237C/239C
BC237B
−
−
120
200
380
−
150
270
−
290
500
180
300
−
−
800
460
800
−
CE
(I = 2.0 mA, V = 5.0 V)
C
CE
(I = 100 mA, V = 5.0 V)
C
CE
BC237C/239C
−
−
Collector−Emitter On Voltage
(I = 10 mA, I = 0.5 mA)
V
V
V
V
CE(sat)
BE(sat)
BC237/BC239
BC237/BC239
−
−
0.07
0.2
0.2
0.6
C
B
(I = 100 mA, I = 5.0 mA)
C
B
Base−Emitter Saturation Voltage
(I = 10 mA, I = 0.5 mA)
V
−
−
0.6
−
0.83
1.05
C
B
(I = 100 mA, I = 5.0 mA)
C
B
Base−Emitter On Voltage
(I = 100 mA, V = 5.0 V)
V
BE(on)
−
0.55
−
0.5
0.62
0.83
−
0.7
−
C
CE
(I = 2.0 mA, V = 5.0 V)
C
CE
(I = 100 mA, V = 5.0 V)
C
CE
DYNAMIC CHARACTERISTICS
Current−Gain — Bandwidth Product
f
MHz
T
(I = 0.5 mA, V = 3.0 V, f = 100 MHz)
BC237
BC239
BC237
BC239
−
−
150
150
100
140
200
280
−
−
−
−
C
CE
(I = 10 mA, V = 5.0 V, f = 100 MHz)
C
CE
Collector−Base Capacitance
(V = 10 V, I = 0, f = 1.0 MHz)
C
−
−
4.5
pF
pF
dB
obo
CB
C
Emitter−Base Capacitance
C
−
8.0
−
ibo
(V = 0.5 V, I = 0, f = 1.0 MHz)
EB
C
Noise Figure
NF
(I = 0.2 mA, V = 5.0 V, R = 2.0 kW, f = 1.0 kHz)
BC239
BC237
BC239
−
−
−
2.0
2.0
2.0
4.0
10
4.0
C
CE
S
(I = 0.2 mA, V = 5.0 V, R = 2.0 kW, f = 1.0 kHz, Df = 200 Hz)
C
CE
S
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2
BC237, BC237B, BC237C, BC239C
2.0
1.5
1.0
V
T
= 10 V
CE
= 25°C
T = 25°C
A
0.9
0.8
0.7
0.6
0.5
0.4
A
V
@ I /I = 10
C B
BE(sat)
1.0
0.8
V
@ V = 10 V
CE
BE(on)
0.6
0.4
0.3
0.3
0.2
0.1
0
V
@ I /I = 10
C B
CE(sat)
0.2
0.2
0.5 1.0
2.0
5.0
10
20
50 100 200
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.07.0 10
20 30 50 70 100
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
10
7.0
5.0
400
300
200
T
A
= 25°C
C
ib
V
T
= 10 V
CE
= 25°C
100
80
A
3.0
2.0
C
ob
60
40
30
20
1.0
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
I , COLLECTOR CURRENT (mAdc)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Current−Gain — Bandwidth Product
Figure 4. Capacitances
170
160
150
V
= 10 V
CE
f = 1.0 kHz
= 25°C
140
130
120
T
A
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
I , COLLECTOR CURRENT (mAdc)
C
Figure 5. Base Spreading Resistance
http://onsemi.com
3
BC237, BC237B, BC237C, BC239C
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
SEATING
PLANE
INCHES
DIM MIN MAX
MILLIMETERS
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
0.205
0.210
0.165
0.021
0.055
0.105
0.020
D
X X
G
J
H
V
K
L
−−− 12.70
−−−
0.105
6.35
2.04
−−−
−−−
C
N
P
R
V
2.66
2.54
−−−
−−− 0.100
SECTION X−X
0.115
0.135
−−−
−−−
2.93
3.43
1
N
−−−
N
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
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BC237/D
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DIODES
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