BC308C [ONSEMI]

Amplifier Transistors(PNP Silicon); 放大器晶体管（ PNP硅）


型号：	BC308C
厂家：	ONSEMI
描述：	Amplifier Transistors(PNP Silicon) 放大器晶体管（ PNP硅）晶体放大器晶体管
文件：	总4页 (文件大小：88K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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by BC307/D

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

COLLECTOR

BASE

EMITTER

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol BC307, B, C

BC308C

–25

Unit

Vdc

CEO

CBO

EBO

–45

–50

–30

Vdc

–5.0

Vdc

Collector Current — Continuous

–100

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

350

2.8

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.0

8.0

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

357

125

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = –2.0 mAdc, I = 0)

BC307,B,C

BC308C

–45

–25

—

Vdc

(BR)CEO

Emitter–Base Breakdown Voltage

(I = –100 Adc, I = 0)

BC307,B,C

BC308C

–5.0

—

(BR)EBO

Collector–Emitter Leakage Current

CES

= –50 V, V

= –30 V, V

= –50 V, V

= –30 V, V

= 0)

BC307,B,C

BC308C

BC307,B,C

BC308C

—

–0.2

–15

–4.0

nAdc

= 0) T = 125°C

µA

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1997

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(I = –10 µAdc, V

—

= –5.0 Vdc)

BC307B

BC307C/308C

—

150

270

—

(I = –2.0 mAdc, V

= –5.0 Vdc)

BC307

BC307B/308B

BC307C/308C

120

200

420

—

290

500

800

460

800

(I = –100 mAdc, V

C CE

= –5.0 Vdc)

BC307B

BC307C/308C

—

180

300

—

Collector–Emitter Saturation Voltage

(I = –10 mAdc, I = –0.5 mAdc)

Vdc

CE(sat)

—

–0.10

–0.30

–0.25

–0.3

–0.6

—

(I = –10 mAdc, I = see Note 1)

(I = –100 mAdc, I = –5.0 mAdc)

Base–Emitter Saturation Voltage

(I = –10 mAdc, I = –0.5 mAdc)

Vdc

BE(sat)

—

–0.7

–1.0

—

(I = –100 mAdc, I = –5.0 mAdc)

Base–Emitter On Voltage

(I = –2.0 mAdc, V = –5.0 Vdc)

–0.55

–0.62

–0.7

BE(on)

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product

MHz

(I = –10 mAdc, V

= –5.0 Vdc, f = 100 MHz)

BC307,B,C

BC308C

—

280

320

—

Common Base Capacitance

(V = –10 Vdc, I = 0, f = 1.0 MHz)

—

6.0

cbo

Noise Figure

(I = –0.2 mAdc, V

= –5.0 Vdc, R = 2.0 kΩ,

f = 1.0 kHz)

BC307,B,C

BC308C

—

2.0

(I = –0.2 mAdc, V

= –5.0 Vdc, R = 2.0 kΩ,

f = 1.0 kHz, f = 200 Hz)

2.0

1. I = –10 mAdc on the constant base current characteristic, which yields the point I = –11 mAdc, V = –1.0 V.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

TYPICAL CHARACTERISTICS

2.0

1.5

–1.0

= 25°C

= –10 V

–0.9

–0.8

–0.7

–0.6

–0.5

–0.4

= 25°C

@ I /I = 10

C B

BE(sat)

1.0

@ V

= –10 V

BE(on)

0.7

0.5

–0.3

–0.2

–0.1

0.3

0.2

@ I /I = 10

C B

CE(sat)

–0.2

–0.5 –1.0 –2.0

–5.0 –10

–20

–50 –100 –200

–0.1 –0.2

–0.5 –1.0 –2.0

–5.0 –10

–20

–50 –100

, COLLECTOR CURRENT (mAdc)

I , COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain

Figure 2. “Saturation” and “On” Voltages

7.0

5.0

400

300

200

150

= –10 V

T = 25°C

= 25°C

100

3.0

2.0

–0.5

1.0

–0.4 –0.6

–1.0

–2.0 –3.0

–5.0

–10

–20 –30

–50

–1.0

–2.0

V , REVERSE VOLTAGE (VOLTS)

–4.0 –6.0

–10

–20 –30 –40

, COLLECTOR CURRENT (mAdc)

Figure 3. Current–Gain — Bandwidth Product

Figure 4. Capacitances

1.0

150

140

0.5

0.3

= –10 V

f = 1.0 kHz

= 25

= –10 V

f = 1.0 kHz

= 25

°C

130

120

110

100

0.1

0.05

0.03

0.01

–0.1

–0.2

–0.5

–1.0

–2.0

–5.0

–10

–0.1

–0.2 –0.3 –0.5

–1.0

–2.0 –3.0 –5.0

–10

, COLLECTOR CURRENT (mAdc)

I , COLLECTOR CURRENT (mAdc)

Figure 5. Output Admittance

Figure 6. Base Spreading Resistance

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.

DIMENSION D AND J APPLY BETWEEN L AND K

MINIMUM. LEAD DIMENSION IS UNCONTROLLED

IN P AND BEYOND DIMENSION K MINIMUM.

SEATING

PLANE

INCHES

MIN

MILLIMETERS

DIM

MAX

0.205

0.210

0.165

0.022

0.019

0.055

0.105

0.020

–––

MIN

4.45

4.32

3.18

0.41

1.15

2.42

0.39

12.70

6.35

2.04

–––

MAX

5.20

5.33

4.19

0.55

0.48

1.39

2.66

0.50

–––

0.175

0.170

0.125

0.016

0.045

0.095

0.015

0.500

0.250

0.080

–––

X X

SECTION X–X

–––

0.105

0.100

–––

2.66

2.54

–––

0.115

0.135

2.93

3.43

–––

STYLE 17:

PIN 1. COLLECTOR

2. BASE

3. EMITTER

CASE 029–04

(TO–226AA)

ISSUE AD

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”

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BC307/D

Motorola Small–Signal Transistors, FETs and Diodes Device Data

◊

BC308C [ONSEMI]

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