BC447ZL1 [ONSEMI]

300mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29, 3 PIN;
BC447ZL1
型号: BC447ZL1
厂家: ONSEMI    ONSEMI
描述:

300mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29, 3 PIN

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BC447, BC449, BC449A  
High Voltage Transistors  
PNP Silicon  
http://onsemi.com  
MAXIMUM RATINGS  
COLLECTOR  
1
Rating  
Symbol  
Value  
Unit  
Collector-Emitter Voltage  
BC447  
BC449, BC449A  
V
CEO  
V
CBO  
V
EBO  
Vdc  
80  
100  
2
BASE  
Collector-Base Voltage  
BC447  
BC449, BC449A  
Vdc  
80  
100  
3
EMITTER  
Emitter-Base Voltage  
5.0  
Vdc  
Collector Current – Continuous  
I
C
300  
mAdc  
Total Device Dissipation  
P
P
D
@ T = 25°C  
625  
5.0  
mW  
mW/°C  
A
Derate above 25°C  
Total Device Dissipation  
D
@ T = 25°C  
Derate above 25°C  
1.5  
12  
Watts  
mW/°C  
C
1
2
3
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to  
+150  
°C  
J
stg  
CASE 29  
TO–92  
STYLE 17  
Moisture Sensitivity Level (MSL)  
Electrostatic Discharge (ESD)  
MSL: 1  
NA  
THERMAL CHARACTERISTICS  
Characteristic  
MARKING DIAGRAM  
Symbol  
Max  
Unit  
Thermal Resistance,  
Junction to Ambient  
R
200  
°C/W  
θ
JA  
BC  
44xx  
YWW  
Thermal Resistance,  
Junction to Case  
R
83.3  
°C/W  
θ
JC  
BC44xx = Specific Device Code  
xx  
Y
= 7, 9 or 9A  
= Year  
WW  
= Work Week  
ORDERING INFORMATION  
Device  
Package  
TO–92  
TO–92  
TO–92  
Shipping  
BC447  
BC449  
BC449A  
5000 Units/Box  
5000 Units/Box  
5000 Units/Box  
Semiconductor Components Industries, LLC, 2001  
213  
Publication Order Number:  
May, 2001 – Rev. 0  
BC447/D  
BC447, BC449, BC449A  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (Note 1.)  
(I = 1.0 mAdc, I = 0)  
V
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
BC447  
BC449, BC449A  
80  
100  
C
B
Collector–Base Breakdown Voltage  
(I = 100 µAdc, I = 0)  
V
V
Vdc  
BC447  
BC449, BC449A  
80  
100  
C
E
Emitter–Base Breakdown Voltage  
(I = 10 µAdc, I = 0)  
Vdc  
5.0  
E
C
Collector Cutoff Current  
(V = 60 Vdc, I = 0)  
I
nAdc  
CBO  
BC447  
BC449, BC449A  
100  
100  
CB  
E
(V = 80 Vdc, I = 0)  
CB  
E
ON CHARACTERISTICS (Note 1.)  
DC Current Gain  
h
FE  
(I = 2.0 mAdc, V = 5.0 Vdc)  
BC447, BC449  
BC449A  
BC447, BC449  
BC449A  
BC447, BC449  
BC449A  
50  
120  
50  
100  
50  
460  
220  
C
CE  
(I = 10 mAdc, V = 5.0 Vdc)  
C
CE  
(I = 100 mAdc, V = 5.0 Vdc)  
C
CE  
60  
Collector–Emitter Saturation Voltage  
(I = 100 mAdc, I = 10 mAdc)  
V
Vdc  
Vdc  
Vdc  
CE(sat)  
0.125  
0.85  
0.25  
C
B
Base–Emitter Saturation Voltage  
(I = 100 mAdc, I = 10 mAdc)  
V
BE(sat)  
C
B
Base–Emitter On Voltage  
(I = 2.0 mAdc, V = 5.0 Vdc)  
V
BE(on)  
0.55  
0.76  
0.7  
1.2  
C
CE  
(I = 100 mAdc, V = 5.0 Vdc) (Note 1.)  
C
CE  
DYNAMIC CHARACTERISTICS  
Current–Gain – Bandwidth Product  
f
T
MHz  
(I = 50 mAdc, V = 5.0 Vdc, f = 100 MHz)  
100  
200  
C
CE  
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%  
http://onsemi.com  
214  
BC447, BC449, BC449A  
300  
200  
40  
T = 25°C  
J
T = 25°C  
J
-5.0 V  
20  
C
ibo  
V
CE  
= -1.0 V  
100  
70  
10  
8.0  
6.0  
C
obo  
50  
4.0  
30  
-1.0  
2.0  
-0.1 -0.2  
-2.0 -3.0 -5.0 -7.0 -10  
-20 -30  
-50 -70 -100  
-0.5 -1.0 -2.0  
-5.0 -10 -20  
-50 -100  
I , COLLECTOR CURRENT (mA)  
C
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 1. Current–Gain — Bandwidth Product  
Figure 2. Capacitance  
1.0 k  
700  
500  
-1.0 k  
-700  
V
= -40 V  
CC  
I /I = 10  
C B  
-500  
-300  
-200  
I
= I  
B1 B2  
t
s
T = 25°C  
J
300  
200  
t
f
100  
70  
-100  
-70  
50  
-50  
CURRENT LIMIT  
THERMAL LIMIT  
SECOND BREAKDOWN LIMIT  
t
r
30  
20  
-30  
-20  
MPS8598  
MPS8599  
-20 -30 -50 -70 -100  
DUTY CYCLE 10%  
t @ V  
= -0.5 V  
d
BE(off)  
10  
-10  
-10  
-20  
-30  
-50  
-70 -100  
-200  
-1.0  
-2.0 -3.0 -5.0 -7.0 -10  
I , COLLECTOR CURRENT (mA)  
C
V
CE  
, COLLECTOR-EMITTER VOLTAGE (VOLTS)  
Figure 3. Switching Times  
Figure 4. Active–Region Safe Operating Area  
300  
200  
1.0  
0.8  
0.6  
T = 25°C  
J
T = 125°C  
J
V
@ I /I = 10  
C B  
BE(sat)  
25°C  
V
BE  
@ V = 5.0 V  
CE  
100  
70  
-55°C  
0.4  
0.2  
0
V
CE  
= -5.0 V  
50  
V
@ I /I = 10  
C B  
CE(sat)  
30  
-0.2  
-0.5 -1.0 -2.0  
-5.0 -10 -20  
-50 -100 -200  
0.2  
0.5 1.0 2.0  
5.0  
10  
20  
50 100 200  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 5. DC Current Gain  
Figure 6. “ON” Voltages  
http://onsemi.com  
215  
BC447, BC449, BC449A  
-1.0  
2.0  
1.6  
1.2  
I
=
I
=
I
=
I
=
I =  
C
100 mA  
C
C
C
C
-1.4  
-1.8  
-2.2  
200 mA  
10 mA  
20 mA  
50 mA  
R
q
FOR V  
BE  
VB  
-55°C TO 125°C  
0.8  
0.4  
0
-2.6  
-3.0  
T = 25°C  
J
0.2  
0.5 1.0  
2.0  
5.0  
10  
20  
50 100 200  
0.02  
0.05 0.1 0.2  
0.5 1.0 2.0  
5.0 10  
20  
I , COLLECTOR CURRENT (mA)  
C
I , BASE CURRENT (mA)  
B
Figure 8. Base–Emitter Temperature  
Coefficient  
Figure 7. Collector Saturation Region  
1.0  
0.7  
0.5  
D = 0.5  
0.2  
0.3  
0.2  
0.1  
0.05  
Z
T
Z
T
(t) = r(t) R  
θ
θ
JC  
Z
JC  
- T = P  
(t)  
(t)  
θ
J(pk)  
C
(pk) JC  
0.1  
0.07  
0.05  
P
(pk)  
0.01  
(t) = r(t) R  
0.02  
θ
θ
SINGLE PULSE  
JA  
JA  
- T = P  
Z
θ
J(pk)  
A
(pk) JA  
t
1
D CURVES APPLY FOR  
POWER PULSE TRAIN  
SHOWN READ TIME AT t  
(SEE AN469)  
SINGLE PULSE  
0.03  
0.02  
t
2
1
DUTY CYCLE, D = t /t  
1 2  
0.01  
1.0  
2.0  
5.0  
10  
20  
50  
100  
200  
t, TIME (ms)  
500  
1.0 k  
2.0 k  
5.0 k  
10 k  
20 k  
50 k 100 k  
Figure 9. Thermal Response  
http://onsemi.com  
216  

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