BC447ZL1 [ONSEMI]
300mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29, 3 PIN;![BC447ZL1](http://pdffile.icpdf.com/pdf2/p00296/img/icpdf/BC449RL1_1792143_icpdf.jpg)
型号: | BC447ZL1 |
厂家: | ![]() |
描述: | 300mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29, 3 PIN |
文件: | 总4页 (文件大小:159K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BC447, BC449, BC449A
High Voltage Transistors
PNP Silicon
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MAXIMUM RATINGS
COLLECTOR
1
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
BC447
BC449, BC449A
V
CEO
V
CBO
V
EBO
Vdc
80
100
2
BASE
Collector-Base Voltage
BC447
BC449, BC449A
Vdc
80
100
3
EMITTER
Emitter-Base Voltage
5.0
Vdc
Collector Current – Continuous
I
C
300
mAdc
Total Device Dissipation
P
P
D
@ T = 25°C
625
5.0
mW
mW/°C
A
Derate above 25°C
Total Device Dissipation
D
@ T = 25°C
Derate above 25°C
1.5
12
Watts
mW/°C
C
1
2
3
Operating and Storage Junction
Temperature Range
T , T
–55 to
+150
°C
J
stg
CASE 29
TO–92
STYLE 17
Moisture Sensitivity Level (MSL)
Electrostatic Discharge (ESD)
MSL: 1
NA
THERMAL CHARACTERISTICS
Characteristic
MARKING DIAGRAM
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
R
200
°C/W
θ
JA
BC
44xx
YWW
Thermal Resistance,
Junction to Case
R
83.3
°C/W
θ
JC
BC44xx = Specific Device Code
xx
Y
= 7, 9 or 9A
= Year
WW
= Work Week
ORDERING INFORMATION
Device
Package
TO–92
TO–92
TO–92
Shipping
BC447
BC449
BC449A
5000 Units/Box
5000 Units/Box
5000 Units/Box
Semiconductor Components Industries, LLC, 2001
213
Publication Order Number:
May, 2001 – Rev. 0
BC447/D
BC447, BC449, BC449A
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (Note 1.)
(I = 1.0 mAdc, I = 0)
V
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
BC447
BC449, BC449A
80
100
–
–
–
–
C
B
Collector–Base Breakdown Voltage
(I = 100 µAdc, I = 0)
V
V
Vdc
BC447
BC449, BC449A
80
100
–
–
–
–
C
E
Emitter–Base Breakdown Voltage
(I = 10 µAdc, I = 0)
Vdc
5.0
–
–
E
C
Collector Cutoff Current
(V = 60 Vdc, I = 0)
I
nAdc
CBO
BC447
BC449, BC449A
–
–
–
–
100
100
CB
E
(V = 80 Vdc, I = 0)
CB
E
ON CHARACTERISTICS (Note 1.)
DC Current Gain
h
FE
–
(I = 2.0 mAdc, V = 5.0 Vdc)
BC447, BC449
BC449A
BC447, BC449
BC449A
BC447, BC449
BC449A
50
120
50
100
50
–
–
–
–
–
–
460
220
–
–
–
C
CE
(I = 10 mAdc, V = 5.0 Vdc)
C
CE
(I = 100 mAdc, V = 5.0 Vdc)
C
CE
60
–
Collector–Emitter Saturation Voltage
(I = 100 mAdc, I = 10 mAdc)
V
Vdc
Vdc
Vdc
CE(sat)
–
–
0.125
0.85
0.25
–
C
B
Base–Emitter Saturation Voltage
(I = 100 mAdc, I = 10 mAdc)
V
BE(sat)
C
B
Base–Emitter On Voltage
(I = 2.0 mAdc, V = 5.0 Vdc)
V
BE(on)
0.55
–
–
0.76
0.7
1.2
C
CE
(I = 100 mAdc, V = 5.0 Vdc) (Note 1.)
C
CE
DYNAMIC CHARACTERISTICS
Current–Gain – Bandwidth Product
f
T
MHz
(I = 50 mAdc, V = 5.0 Vdc, f = 100 MHz)
100
200
–
C
CE
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2%
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214
BC447, BC449, BC449A
300
200
40
T = 25°C
J
T = 25°C
J
-5.0 V
20
C
ibo
V
CE
= -1.0 V
100
70
10
8.0
6.0
C
obo
50
4.0
30
-1.0
2.0
-0.1 -0.2
-2.0 -3.0 -5.0 -7.0 -10
-20 -30
-50 -70 -100
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 1. Current–Gain — Bandwidth Product
Figure 2. Capacitance
1.0 k
700
500
-1.0 k
-700
V
= -40 V
CC
I /I = 10
C B
-500
-300
-200
I
= I
B1 B2
t
s
T = 25°C
J
300
200
t
f
100
70
-100
-70
50
-50
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
t
r
30
20
-30
-20
MPS8598
MPS8599
-20 -30 -50 -70 -100
DUTY CYCLE ≤ 10%
t @ V
= -0.5 V
d
BE(off)
10
-10
-10
-20
-30
-50
-70 -100
-200
-1.0
-2.0 -3.0 -5.0 -7.0 -10
I , COLLECTOR CURRENT (mA)
C
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. Switching Times
Figure 4. Active–Region Safe Operating Area
300
200
1.0
0.8
0.6
T = 25°C
J
T = 125°C
J
V
@ I /I = 10
C B
BE(sat)
25°C
V
BE
@ V = 5.0 V
CE
100
70
-55°C
0.4
0.2
0
V
CE
= -5.0 V
50
V
@ I /I = 10
C B
CE(sat)
30
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200
0.2
0.5 1.0 2.0
5.0
10
20
50 100 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 5. DC Current Gain
Figure 6. “ON” Voltages
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215
BC447, BC449, BC449A
-1.0
2.0
1.6
1.2
I
=
I
=
I
=
I
=
I =
C
100 mA
C
C
C
C
-1.4
-1.8
-2.2
200 mA
10 mA
20 mA
50 mA
R
q
FOR V
BE
VB
-55°C TO 125°C
0.8
0.4
0
-2.6
-3.0
T = 25°C
J
0.2
0.5 1.0
2.0
5.0
10
20
50 100 200
0.02
0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
I , COLLECTOR CURRENT (mA)
C
I , BASE CURRENT (mA)
B
Figure 8. Base–Emitter Temperature
Coefficient
Figure 7. Collector Saturation Region
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
Z
T
Z
T
(t) = r(t) • R
θ
θ
JC
Z
JC
- T = P
(t)
(t)
θ
J(pk)
C
(pk) JC
0.1
0.07
0.05
P
(pk)
0.01
(t) = r(t) • R
0.02
θ
θ
SINGLE PULSE
JA
JA
- T = P
Z
θ
J(pk)
A
(pk) JA
t
1
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
(SEE AN469)
SINGLE PULSE
0.03
0.02
t
2
1
DUTY CYCLE, D = t /t
1 2
0.01
1.0
2.0
5.0
10
20
50
100
200
t, TIME (ms)
500
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k 100 k
Figure 9. Thermal Response
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BC449A
Small Signal Bipolar Transistor, 0.3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
CDIL
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