BC449G [ONSEMI]

High Voltage Transistors;


型号：	BC449G
厂家：	ONSEMI
描述：	High Voltage Transistors 小信号双极晶体管
文件：	总6页 (文件大小：81K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BC447, BC449, BC449A

High Voltage Transistors

NPN Silicon

http://onsemi.com

MAXIMUM RATINGS

COLLECTOR

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

BC447

BC449, BC449A

CEO

CBO

EBO

Vdc

100

BASE

Collector-Base Voltage

BC447

BC449, BC449A

Vdc

100

EMITTER

Emitter-Base Voltage

5.0

Vdc

Collector Current - Continuous

300

mAdc

Total Device Dissipation

@ T = 25°C

625

5.0

mW/°C

Derate above 25°C

Total Device Dissipation

@ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

-55 to

+150

°C

stg

CASE 29

TO-92

STYLE 17

Moisture Sensitivity Level (MSL)

Electrostatic Discharge (ESD)

MSL: 1

THERMAL CHARACTERISTICS

Characteristic

MARKING DIAGRAM

Symbol

Max

Unit

Thermal Resistance,

Junction-to-Ambient

200

°C/W

44xx

YWW

Thermal Resistance,

Junction-to-Case

83.3

°C/W

BC44xx = Specific Device Code

= 7, 9 or 9A

= Year

= Work Week

ORDERING INFORMATION

Device

BC447

Package

TO-92

Shipping

5000 Units/Box

BC449

TO-92

BC449A

TO-92

Semiconductor Components Industries, LLC, 2003

Publication Order Number:

March, 2003 - Rev. 2

BC447/D

BC447, BC449, BC449A

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector- Emitter Breakdown Voltage (Note 1)

(I = 1.0 mAdc, I = 0)

Vdc

(BR)CEO

(BR)CBO

(BR)EBO

BC447

BC449, BC449A

100

Collector- Base Breakdown Voltage

(I = 100 µAdc, I = 0)

Vdc

BC447

BC449, BC449A

100

Emitter- Base Breakdown Voltage

(I = 10 µAdc, I = 0)

Vdc

5.0

Collector Cutoff Current

(V = 60 Vdc, I = 0)

nAdc

CBO

BC447

BC449, BC449A

100

(V = 80 Vdc, I = 0)

ON CHARACTERISTICS (Note 1)

DC Current Gain

(I = 2.0 mAdc, V = 5.0 Vdc)

BC447, BC449

BC449A

BC447, BC449

BC449A

BC447, BC449

BC449A

120

100

460

220

(I = 10 mAdc, V = 5.0 Vdc)

(I = 100 mAdc, V = 5.0 Vdc)

Collector- Emitter Saturation Voltage

(I = 100 mAdc, I = 10 mAdc)

Vdc

CE(sat)

0.125

0.85

0.25

Base- Emitter Saturation Voltage

(I = 100 mAdc, I = 10 mAdc)

BE(sat)

Base- Emitter On Voltage

(I = 2.0 mAdc, V = 5.0 Vdc)

BE(on)

0.55

0.7

1.2

(I = 100 mAdc, V = 5.0 Vdc) (Note 1)

0.76

DYNAMIC CHARACTERISTICS

Current- Gain - Bandwidth Product

MHz

(I = 50 mAdc, V = 5.0 Vdc, f = 100 MHz)

100

200

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle 2%

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BC447, BC449, BC449A

300

200

T = 25°C

−5.0 V

ibo

= −1.0 V

100

8.0

6.0

obo

4.0

2.0

−1.0

−2.0 −3.0 −5.0 −7.0 −10

−20 −30

−50 −70 −100

−0.1 −0.2

−0.5 −1.0 −2.0

−5.0 −10 −20

−50 −100

I , COLLECTOR CURRENT (mA)

V , REVERSE VOLTAGE (VOLTS)

Figure 1. Current-Gain — Bandwidth Product

Figure 2. Capacitance

1.0 k

700

500

−1.0 k

−700

= −40 V

I /I = 10

C B

−500

−300

−200

I = I

B1 B2

T = 25°C

300

200

100

−100

−70

−50

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

−30

−20

MPS8598

MPS8599

−20 −30 −50 −70 −100

DUTY CYCLE ≤ 10%

t @ V

= −0.5 V

BE(off)

−10

−20

−30

−50

−70 −100

−200

−1.0

−2.0 −3.0 −5.0 −7.0 −10

I , COLLECTOR CURRENT (mA)

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

Figure 3. Switching Times

Figure 4. Active-Region Safe Operating Area

300

200

1.0

0.8

0.6

T = 25°C

T = 125°C

@ I /I = 10

C B

BE(sat)

25°C

@ V = 5.0 V

100

−55°C

0.4

0.2

= −5.0 V

@ I /I = 10

C B

CE(sat)

−0.2

−0.5 −1.0 −2.0

−5.0 −10 −20

−50 −100 −200

0.2

0.5 1.0 2.0

5.0

50 100 200

I , COLLECTOR CURRENT (mA)

Figure 5. DC Current Gain

Figure 6. “ON” Voltages

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BC447, BC449, BC449A

−1.0

2.0

1.6

1.2

I =

100 mA

200 mA

10 mA

20 mA

50 mA

−1.4

−1.8

−2.2

FOR V

−55°C TO 125°C

0.8

0.4

−2.6

−3.0

T = 25°C

0.2

0.5 1.0

2.0

5.0

50 100 200

0.02

0.05 0.1 0.2

0.5 1.0 2.0

5.0 10

I , COLLECTOR CURRENT (mA)

I , BASE CURRENT (mA)

Figure 8. Base-Emitter Temperature

Coefficient

Figure 7. Collector Saturation Region

1.0

0.7

0.5

D = 0.5

0.2

0.3

0.2

0.1

0.05

(t) = r(t) • R

− T = P

(t)

J(pk)

(pk) JC

0.1

0.07

0.05

(pk)

0.01

(t) = r(t) • R

0.02

SINGLE PULSE

− T = P Z

A (pk) JA

J(pk)

D CURVES APPLY FOR

POWER PULSE TRAIN

SHOWN READ TIME AT t

(SEE AN469)

SINGLE PULSE

0.03

0.02

DUTY CYCLE, D = t /t

1 2

0.01

1.0

2.0

5.0

100

200

t, TIME (ms)

500

1.0 k

2.0 k

5.0 k

10 k

20 k

50 k 100 k

Figure 9. Thermal Response

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BC447, BC449, BC449A

PACKAGE DIMENSIONS

TO-92

(TO-226)

CASE 29-11

ISSUE AL

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

INCHES

DIM MIN MAX

MILLIMETERS

SEATING

PLANE

MIN

4.45

4.32

3.18

0.407

1.15

2.42

0.39

12.70

6.35

2.04

−−−

MAX

5.20

5.33

4.19

0.533

1.39

2.66

0.50

−−−

0.175

0.170

0.125

0.016

0.045

0.095

0.015

0.500

0.250

0.080

−−−

0.205

0.210

0.165

0.021

0.055

0.105

0.020

−−−

X X

−−−

0.105

0.100

−−−

2.66

2.54

−−−

SECTION X-X

0.115

0.135

2.93

3.43

−−−

STYLE 17:

PIN 1. COLLECTOR

2. BASE

3. EMITTER

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BC447, BC449, BC449A

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make

changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any

particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be

validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.

SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death

may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC

and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees

arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that

SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

Literature Fulfillment:

JAPAN: ON Semiconductor, Japan Customer Focus Center

2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051

Phone: 81-3-5773-3850

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada

Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada

Email: ONlit@hibbertco.com

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local

Sales Representative.

N. American Technical Support: 800-282-9855 Toll Free USA/Canada

BC447/D

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BC449G [ONSEMI]

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