BC489RL [ONSEMI]
500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN;
| 型号： | BC489RL |
| 厂家： | 
ONSEMI |
| 描述： | 500mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN |
| 文件： | 总5页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
High Current Transistors
NPN Silicon
BC489, A, B
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Value
80
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
V
CBO
V
EBO
80
5.0
0.5
Collector Current — Continuous
I
C
1
2
3
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
COLLECTOR
1
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
q
JA
JC
2
R
83.3
q
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Collector–Emitter Breakdown Voltage
V
80
80
5.0
—
—
—
—
—
—
—
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 10 mAdc, I = 0)
C
B
Collector–Base Breakdown Voltage
(I = 100 mAdc, I = 0)
V
V
C
E
Emitter–Base Breakdown Voltage
(I = 10 mAdc, I = 0)
—
Vdc
E
C
Collector Cutoff Current
(V = 60 Vdc, I = 0)
I
100
nAdc
CBO
CB
E
ON CHARACTERISTICS*
DC Current Gain
h
FE
—
(I = 10 mAdc, V = 2.0 Vdc)
40
60
100
160
15
—
—
160
260
—
—
C
CE
(I = 100 mAdc, V = 2.0 Vdc)
BC489
BC489A
BC489B
400
250
400
—
C
CE
(I = 1.0 Adc, V = 5.0 Vdc)*
C
CE
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
Semiconductor Components Industries, LLC, 2001
227
Publication Order Number:
March, 2001 – Rev. 1
BC489/D
BC489, A, B
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
ON CHARACTERISTICS* (Continued)
Collector–Emitter Saturation Voltage
Symbol
Min
Typ
Max
Unit
V
Vdc
CE(sat)
BE(sat)
(I = 500 mAdc, I = 50 mAdc)
—
—
0.2
0.3
0.5
—
C
B
(I = 1.0 Adc, I = 100 mAdc)
C
B
Base–Emitter Saturation Voltage
(I = 500 mAdc, I = 50 mAdc)
V
Vdc
—
—
0.85
0.9
1.2
—
C
B
(1)
(I = 1.0 Adc, I = 100 mAdc)
C
B
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
f
—
—
—
200
7.0
50
—
—
—
MHz
pF
T
(I = 50 mAdc, V = 2.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
ob
(V = 10 Vdc, I = 0, f = 1.0 MHz)
CB
E
Input Capacitance
C
pF
ib
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
EB
C
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
TURN-ON TIME
V
TURN-OFF TIME
+V
V
CC
BB
-1.0 V
CC
+40 V
+40 V
5.0 µs
100
R
L
100
R
L
+10 V
0
OUTPUT
OUTPUT
R
B
R
B
V
in
V
in
5.0 µF
5.0 µF
t = 3.0 ns
r
100
100
*C < 6.0 pF
S
*C < 6.0 pF
S
5.0 µs
t = 3.0 ns
r
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
http://onsemi.com
228
BC489, A, B
300
200
80
60
T = 25°C
J
V
= 2.0 V
CE
T = 25°C
J
40
C
ibo
20
100
70
50
10
8.0
6.0
C
obo
30
2.0 3.0
4.0
0.1 0.2
5.0 7.0 10
20 30
50 70 100
200
0.5 1.0 2.0
5.0 10
20
50 100
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 2. Current–Gain — Bandwidth Product
Figure 3. Capacitance
1.0 k
700
500
t
s
300
200
100
70
50
t
f
V
= 40 V
CC
30
20
t
r
I /I = 10
C B
I
= I
B1 B2
t @ V
= 0.5 V
d
BE(off)
T = 25°C
J
10
5.0 7.0 10
20 30
50
500
70 100
200 300
I , COLLECTOR CURRENT (mA)
C
Figure 4. Switching Time
1.0
0.7
0.5
D = 0.5
0.2
0.1
0.3
0.2
P
(pk)
t
1
0.02
0.1
0.07
0.05
t
2
0.01
DUTY CYCLE, D = t /t
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
1
2
SINGLE PULSE
READ TIME AT t (SEE AN–469)
1
0.03
0.02
SINGLE PULSE
T
J(pk)
T
J(pk)
– T = P
Z
θ
(pk) JC(t)
C
Z
Z
= r(t) • R
θ
θ
θ
JC(t)
JA(t)
JC
JA
– T = P
Z
θ
JA(t)
A
(pk)
= r(t) • R
θ
0.01
1.0
2.0
5.0
10
20
50
100
200
500
1.0Ăk 2.0Ăk
5.0Ăk
10Ăk
20Ăk
100Ăk
50Ăk
t, TIME (ms)
Figure 5. Thermal Response
http://onsemi.com
229
BC489, A, B
1.0 k
700
500
100 µs
1.0 ms
1.0 s
= 25°C
300
200
T
C
T = 25°C
A
100
70
50
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
30
20
BC489
20 30
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
1.0
2.0 3.0
5.0 7.0 10
50 70 100
V
CE
Figure 6. Active Region — Safe Operating Area
400
200
T =125°C
J
V
CE
= 1.0 V
25°C
-55°C
100
80
60
40
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
500
I , COLLECTOR CURRENT (mA)
C
Figure 7. DC Current Gain
1.0
1.0
0.8
T = 25°C
J
T = 25°C
J
0.8
V
@ I /I = 10
C B
BE(sat)
50
mA
I
= 10 mA
100 mA
250 mA
500 mA
C
0.6
0.4
0.2
0
0.6
0.4
0.2
0
V
BE(on)
@ V = 1.0 V
CE
V
@ I /I = 10
C B
CE(sat)
0.5 1.0
2.0
5.0
10
20
50
100 200
500
0.05 0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 8. “On” Voltages
Figure 9. Collector Saturation Region
http://onsemi.com
230
BC489, A, B
-0.8
-1.2
-1.0
-0.8
T = 25°C
J
V
@ I /I = 10
C B
BE(sat)
-1.6
-0.6
V
BE(on)
@ V = -1.0 V
CE
R
θ
for V
BE
VB
-2.0
-2.4
-2.8
-0.4
-0.2
0
V
@ I /I = 10
CE(sat)
C B
0.5
1.0
2.0
5.0
10
20
50
100 200
500
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200 -500
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 10. Base–Emitter Temperature Coefficient
Figure 11. “On” Voltages
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.8
T = 25°C
J
-1.2
-1.6
-2.0
-2.4
-2.8
R
θ
for V
VB
BE
I
= -10 mA
-50 mA -100 mA
-250 mA -500 mA
C
-0.05 -0.1 -0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200 -500
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 12. Collector Saturation Region
Figure 13. Base–Emitter Temperature Coefficient
http://onsemi.com
231
相关型号：
BC489RLRB
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MOTOROLA
BC489RLRF
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MOTOROLA
BC489RLRM
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
MOTOROLA
©2020 ICPDF网 联系我们和版权申明