BC546BZL1 [ONSEMI]
Amplifier Transistors; 放大器晶体管
| 型号： | BC546BZL1 |
| 厂家： | 
ONSEMI |
| 描述： | Amplifier Transistors |
| 文件： | 总6页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC546B, BC547A, B, C,
BC548B, C
Amplifier Transistors
NPN Silicon
Features
http://onsemi.com
• Pb−Free Package is Available*
COLLECTOR
1
2
BASE
MAXIMUM RATINGS
3
Rating
Symbol
Value
Unit
EMITTER
Collector-Emitter Voltage
V
CEO
V
CBO
V
EBO
Vdc
BC546
BC547
BC548
65
45
30
MARKING
DIAGRAM
Collector-Base Voltage
Emitter-Base Voltage
Vdc
TO−92
CASE 29
STYLE 17
BC546
BC547
BC548
80
50
30
BC
54xx
YWWG
1
6.0
Vdc
2
3
Collector Current − Continuous
I
C
100
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
625
5.0
mW
mW/°C
A
D
BC54xx = Specific Device Code
= Year
WW = Work Week
Y
Total Device Dissipation @ T = 25°C
P
D
1.5
12
Watt
mW/°C
C
Derate above 25°C
G
= Pb−Free Package
Operating and Storage Junction
Temperature Range
T , T
J
−55 to
+150
°C
stg
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
R
200
°C/W
q
JA
Junction−to−Ambient
Thermal Resistance,
Junction−to−Case
R
83.3
°C/W
q
JC
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
May, 2004 − Rev. 4
BC546/D
BC546B, BC547A, B, C, BC548B, C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
(I = 1.0 mA, I = 0)
BC546
BC547
BC548
V
65
45
30
−
−
−
−
−
−
V
(BR)CEO
(BR)CBO
(BR)EBO
C
B
Collector − Base Breakdown Voltage
(I = 100 mAdc)
C
BC546
BC547
BC548
V
V
80
50
30
−
−
−
−
−
−
V
V
Emitter − Base Breakdown Voltage
BC546
BC547
BC548
6.0
6.0
6.0
−
−
−
−
−
−
(I = 10 mA, I = 0)
E
C
Collector Cutoff Current
(V = 70 V, V = 0)
I
CES
BC546
BC547
BC548
BC546/547/548
−
−
−
−
0.2
0.2
0.2
−
15
15
15
4.0
nA
CE
BE
(V = 50 V, V = 0)
CE
BE
(V = 35 V, V = 0)
CE
BE
(V = 30 V, T = 125°C)
mA
CE
A
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 10 mA, V = 5.0 V)
BC547A
BC546B/547B/548B
BC548C
−
−
−
90
150
270
−
−
−
C
CE
(I = 2.0 mA, V = 5.0 V)
BC546
BC547
BC548
BC547A
BC546B/547B/548B
BC547C/BC548C
110
110
110
110
200
420
−
−
−
180
290
520
450
800
800
220
450
800
C
CE
(I = 100 mA, V = 5.0 V)
BC547A/548A
BC546B/547B/548B
BC548C
−
−
−
120
180
300
−
−
−
C
CE
Collector − Emitter Saturation Voltage
(I = 10 mA, I = 0.5 mA)
V
V
CE(sat)
−
−
−
0.09
0.2
0.3
0.25
0.6
0.6
C
B
(I = 100 mA, I = 5.0 mA)
C
B
(I = 10 mA, I = See Note 1)
C
B
Base − Emitter Saturation Voltage
(I = 10 mA, I = 0.5 mA)
V
−
0.7
−
V
V
BE(sat)
C
B
Base − Emitter On Voltage
(I = 2.0 mA, V = 5.0 V)
V
BE(on)
0.55
−
−
−
0.7
0.77
C
CE
(I = 10 mA, V = 5.0 V)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product
f
T
MHz
(I = 10 mA, V = 5.0 V, f = 100 MHz)
BC546
BC547
BC548
150
150
150
300
300
300
−
−
−
C
CE
Output Capacitance
(V = 10 V, I = 0, f = 1.0 MHz)
C
−
1.7
4.5
pF
pF
−
obo
CB
C
Input Capacitance
(V = 0.5 V, I = 0, f = 1.0 MHz)
C
ibo
−
10
−
EB
C
Small − Signal Current Gain
h
fe
(I = 2.0 mA, V = 5.0 V, f = 1.0 kHz)
BC546
BC547/548
BC547A
BC546B/547B/548B
BC547C/548C
125
125
125
240
450
−
−
220
330
600
500
900
260
500
900
C
CE
Noise Figure
NF
dB
(I = 0.2 mA, V = 5.0 V, R = 2 kW,
f = 1.0 kHz, Df = 200 Hz)
BC546
BC547
BC548
−
−
−
2.0
2.0
2.0
10
10
10
C
CE
S
1. I is value for which I = 11 mA at V = 1.0 V.
B
C
CE
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2
BC546B, BC547A, B, C, BC548B, C
BC547/BC548
2.0
1.5
1.0
V
= 10 V
T = 25°C
A
0.9
0.8
0.7
CE
T = 25°C
A
V
@ I /I = 10
C B
BE(sat)
1.0
0.8
V
BE(on)
@ V = 10 V
CE
0.6
0.5
0.4
0.3
0.6
0.4
0.3
0.2
0.1
V
@ I /I = 10
C B
CE(sat)
0.2
0
0.1
0.2
0.5 1.0
2.0
5.0 10
20
50 100 200
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
2.0
1.6
1.2
0.8
0.4
0
1.0
1.2
1.6
2.0
2.4
2.8
T = 25°C
−55°C to +125°C
A
I
C
= 200 mA
I
C
= 50 mA
I = 100 mA
C
I
=
I =
C
10 mA 20 mA
C
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
5.0
400
300
T = 25°C
A
200
C
ib
V
= 10 V
CE
T = 25°C
100
80
3.0
2.0
A
C
ob
60
40
30
1.0
20
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
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3
BC546B, BC547A, B, C, BC548B, C
BC546
1.0
T = 25°C
A
V
= 5 V
CE
T = 25°C
0.8
A
V
@ I /I = 10
C B
BE(sat)
2.0
1.0
0.5
0.6
0.4
0.2
0
V
@ V = 5.0 V
CE
BE
0.2
V
@ I /I = 10
C B
CE(sat)
0.1 0.2
1.0
10
100
0.2
0.5 1.0 2.0
5.0
10 20
50 100 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. DC Current Gain
Figure 8. “On” Voltage
2.0
1.6
1.2
0.8
0.4
0
−1.0
−1.4
−1.8
−2.2
−2.6
−3.0
T = 25°C
A
100 mA
200 mA
20 mA
50 mA
q
for V
BE
VB
−55°C to 125°C
I
=
C
10 mA
0.02 0.05 0.1 0.2
0.5
1.0 2.0
5.0 10
20
0.2
0.5 1.0 2.0
5.0
10 20
50
100 200
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 9. Collector Saturation Region
Figure 10. Base−Emitter Temperature Coefficient
40
T = 25°C
A
V
= 5 V
CE
T = 25°C
500
A
20
10
C
ib
200
100
50
6.0
4.0
C
ob
20
2.0
0.1 0.2
0.5
1.0 2.0
5.0
10 20
50
100
1.0
5.0 10
50 100
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
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4
BC546B, BC547A, B, C, BC548B, C
DEVICE ORDERING INFORMATION
†
Device
BC546B
Package
Shipping
5000 Units / Bulk
2000 Tape & Reel
BC546BRL1
BC546BZL1
BC547ARL
BC547ARL1
BC547AZL1
BC547B
2000 Tape & Ammo Box
2000 Tape & Reel
2000 Tape & Reel
2000 Tape & Ammo Box
5000 Units / Bulk
TO−92 (TO−226)
BC547BRL1
BC547BZL1
BC547C
2000 Tape & Reel
2000 Tape & Ammo Box
5000 Units / Bulk
BC547CZL1
BC548B
2000 Tape & Ammo Box
5000 Units / Bulk
BC548BRL1
BC548BZL1
BC548BZL1G
2000 Tape & Reel
2000 Tape & Ammo Box
TO−92 (TO−226)
(Pb−Free)
BC548C
5000 Units / Bulk
TO−92 (TO−226)
BC548CZL1
2000 Tape & Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
BC546B, BC547A, B, C, BC548B, C
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
−−−
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
SEATING
PLANE
K
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
−−−
0.205
0.210
0.165
0.021
0.055
0.105
0.020
−−−
D
X X
G
K
L
J
H
V
−−−
−−−
N
P
R
V
0.105
0.100
−−−
2.66
2.54
−−−
C
0.115
0.135
2.93
3.43
SECTION X−X
−−−
−−−
1
N
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
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USA/Canada
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Order Literature: http://www.onsemi.com/litorder
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Email: orderlit@onsemi.com
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Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
BC546/D
相关型号：
BC546C
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
DIOTEC
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