BC546RL [ONSEMI]
100mA, 65V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN;
| 型号： | BC546RL |
| 厂家： | 
ONSEMI |
| 描述： | 100mA, 65V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN 放大器 晶体管 |
| 文件： | 总6页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC546B, BC547A, B, C,
BC548B, C
Amplifier Transistors
NPN Silicon
Features
http://onsemi.com
• Pb−Free Packages are Available*
COLLECTOR
1
MAXIMUM RATINGS
2
BASE
Rating
Symbol
Value
Unit
Collector - Emitter Voltage
V
CEO
Vdc
BC546
BC547
BC548
65
45
30
3
EMITTER
Collector - Base Voltage
V
CBO
Vdc
BC546
BC547
BC548
80
50
30
TO−92
CASE 29
STYLE 17
Emitter - Base Voltage
V
6.0
Vdc
EBO
Collector Current − Continuous
I
C
100
mAdc
Total Device Dissipation @ T = 25°C
P
625
5.0
mW
A
D
1
1
Derate above 25°C
mW/°C
2
2
3
STRAIGHT LEAD
3
BENT LEAD
TAPE & REEL
Total Device Dissipation @ T = 25°C
P
D
1.5
12
W
mW/°C
C
Derate above 25°C
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
MARKING DIAGRAM
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
R
q
JA
BC
54xy
AYWW G
G
R
q
JC
83.3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
x
= 6, 7, or 8
y
= A, B or C
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
June, 2012 − Rev. 7
BC546/D
BC546B, BC547A, B, C, BC548B, C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage
V
V
(BR)CEO
(BR)CBO
(BR)EBO
(I = 1.0 mA, I = 0)
BC546
BC547
BC548
65
45
30
−
−
−
−
−
−
C
B
Collector − Base Breakdown Voltage
V
V
V
V
(I = 100 mAdc)
C
BC546
BC547
BC548
80
50
30
−
−
−
−
−
−
Emitter − Base Breakdown Voltage
(I = 10 mA, I = 0)
BC546
BC547
BC548
6.0
6.0
6.0
−
−
−
−
−
−
E
C
Collector Cutoff Current
(V = 70 V, V = 0)
I
CES
BC546
BC547
−
−
−
−
0.2
0.2
0.2
−
15
15
15
4.0
nA
mA
−
CE
BE
(V = 50 V, V = 0)
CE
BE
(V = 35 V, V = 0)
BC548
CE
BE
(V = 30 V, T = 125°C)
BC546/547/548
CE
A
ON CHARACTERISTICS
DC Current Gain
h
FE
(I = 10 mA, V = 5.0 V)
BC547A
BC546B/547B/548B
BC548C
−
−
−
90
150
270
−
−
−
C
CE
(I = 2.0 mA, V = 5.0 V)
BC546
BC547
110
110
110
110
200
420
−
−
450
800
800
220
450
800
C
CE
BC548
−
BC547A
BC546B/547B/548B
BC547C/BC548C
180
290
520
(I = 100 mA, V = 5.0 V)
BC547A/548A
BC546B/547B/548B
BC548C
−
−
−
120
180
300
−
−
−
C
CE
Collector − Emitter Saturation Voltage
(I = 10 mA, I = 0.5 mA)
V
V
CE(sat)
−
−
−
0.09
0.2
0.3
0.25
0.6
0.6
C
B
(I = 100 mA, I = 5.0 mA)
C
B
(I = 10 mA, I = See Note 1)
C
B
Base − Emitter Saturation Voltage
(I = 10 mA, I = 0.5 mA)
V
−
0.7
−
V
V
BE(sat)
C
B
Base − Emitter On Voltage
(I = 2.0 mA, V = 5.0 V)
V
BE(on)
0.55
−
−
−
0.7
0.77
C
CE
(I = 10 mA, V = 5.0 V)
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product
f
T
MHz
(I = 10 mA, V = 5.0 V, f = 100 MHz)
BC546
BC547
BC548
150
150
150
300
300
300
−
−
−
C
CE
Output Capacitance
(V = 10 V, I = 0, f = 1.0 MHz)
C
−
1.7
4.5
pF
pF
−
obo
CB
C
Input Capacitance
(V = 0.5 V, I = 0, f = 1.0 MHz)
C
−
10
−
ibo
EB
C
Small − Signal Current Gain
(I = 2.0 mA, V = 5.0 V, f = 1.0 kHz)
h
fe
BC546
BC547/548
125
125
125
240
450
−
−
220
330
600
500
900
260
500
900
C
CE
BC547A
BC546B/547B/548B
BC547C/548C
Noise Figure (I = 0.2 mA, V = 5.0 V, R = 2 kW, f = 1.0 kHz, Df = 200 Hz)
NF
dB
C
CE
S
BC546
BC547
BC548
−
−
−
2.0
2.0
2.0
10
10
10
1. I is value for which I = 11 mA at V = 1.0 V.
B
C
CE
http://onsemi.com
2
BC546B, BC547A, B, C, BC548B, C
BC547/BC548
2.0
1.5
1.0
V
= 10 V
T = 25°C
A
0.9
0.8
0.7
CE
T = 25°C
A
V
@ I /I = 10
C B
BE(sat)
1.0
0.8
V
BE(on)
@ V = 10 V
CE
0.6
0.5
0.4
0.6
0.4
0.3
0.3
0.2
0.1
V
@ I /I = 10
C B
CE(sat)
0.2
0
0.1
0.2
0.5 1.0 2.0
5.0 10
20
50 100 200
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
2.0
1.6
1.2
0.8
0.4
0
1.0
1.2
1.6
2.0
2.4
2.8
T = 25°C
-55°C to +125°C
A
I
C
= 200 mA
I
C
= 50 mA
I = 100 mA
C
I
=
I =
C
10 mA 20 mA
C
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
5.0
400
300
T = 25°C
A
200
C
ib
V
= 10 V
CE
100
80
T = 25°C
A
3.0
2.0
C
ob
60
40
30
1.0
20
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
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3
BC546B, BC547A, B, C, BC548B, C
BC546
1.0
T = 25°C
A
V
= 5 V
CE
0.8
T = 25°C
A
V
@ I /I = 10
C B
BE(sat)
2.0
1.0
0.5
0.6
0.4
0.2
0
V
@ V = 5.0 V
CE
BE
0.2
V
@ I /I = 10
C B
CE(sat)
0.1 0.2
1.0
10
100
0.2
0.5 1.0 2.0
5.0
10 20
50 100 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. DC Current Gain
Figure 8. “On” Voltage
2.0
1.6
1.2
0.8
0.4
0
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
T = 25°C
A
100 mA
200 mA
20 mA
50 mA
q
for V
BE
VB
-55°C to 125°C
I =
10 mA
C
0.02 0.05 0.1 0.2
0.5
1.0 2.0
5.0 10
20
0.2
0.5 1.0 2.0
5.0
10 20
50
100 200
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 9. Collector Saturation Region
Figure 10. Base−Emitter Temperature Coefficient
40
T = 25°C
A
V
= 5 V
CE
500
T = 25°C
A
20
10
C
ib
200
100
50
6.0
4.0
C
ob
20
2.0
0.1 0.2
0.5
1.0 2.0
5.0
10 20
50
100
1.0
5.0 10
50 100
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
http://onsemi.com
4
BC546B, BC547A, B, C, BC548B, C
ORDERING INFORMATION
†
Device
BC546B
Package
Shipping
TO−92
5000 Units / Bulk
5000 Units / Bulk
BC546BG
TO−92
(Pb−Free)
BC546BRL1
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
BC546BRL1G
TO−92
(Pb−Free)
BC546BZL1G
TO−92
(Pb−Free)
2000 / Ammo Box
BC547ARL
TO−92
2000 / Tape & Reel
2000 / Tape & Reel
BC547ARLG
TO−92
(Pb−Free)
BC547AZL1G
BC547BG
TO−92
2000 / Ammo Box
5000 Units / Bulk
2000 / Tape & Reel
2000 / Ammo Box
5000 Units / Bulk
2000 / Ammo Box
5000 Units / Bulk
2000 / Tape & Reel
2000 / Ammo Box
5000 Units / Bulk
2000 / Ammo Box
(Pb−Free)
TO−92
(Pb−Free)
BC547BRL1G
BC547BZL1G
BC547CG
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
BC547CZL1G
BC548BG
TO−92
(Pb−Free)
TO−92
(Pb−Free)
BC548BRL1G
BC548BZL1G
BC548CG
TO−92
(Pb−Free)
TO−92
(Pb−Free)
TO−92
(Pb−Free)
BC548CZL1G
TO−92
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
BC546B, BC547A, B, C, BC548B, C
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
STRAIGHT LEAD
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
INCHES
DIM MIN MAX
MILLIMETERS
SEATING
PLANE
K
MIN
4.45
4.32
3.18
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
---
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
---
0.205
0.210
0.165
0.021 0.407
D
0.055
0.105
0.020
1.15
2.42
0.39
X X
G
J
H
V
K
L
--- 12.70
---
0.105
0.100
---
6.35
2.04
---
---
N
P
R
V
2.66
2.54
---
C
SECTION X−X
0.115
0.135
2.93
3.43
1
N
---
---
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
A
BENT LEAD
TAPE & REEL
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
P
T
SEATING
PLANE
MILLIMETERS
K
DIM MIN
MAX
5.20
5.33
4.19
0.54
2.80
0.50
---
A
B
C
D
G
J
4.45
4.32
3.18
0.40
2.40
0.39
12.70
2.04
1.50
2.93
3.43
D
X X
G
K
N
P
R
V
J
2.66
4.00
---
V
C
---
SECTION X−X
1
N
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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BC546/D
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FAIRCHILD
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