BC547CRL1 [ONSEMI]
100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN;
| 型号： | BC547CRL1 |
| 厂家： | 
ONSEMI |
| 描述： | 100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN |
| 文件： | 总4页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
BC546
BC546B
BC547A
BC547B
BC547C
BC548B
BC548C
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol BC546 BC547 BC548
Unit
Vdc
V
CEO
V
CBO
V
EBO
65
80
45
50
30
30
Vdc
6.0
100
Vdc
Collector Current — Continuous
I
C
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
C
1
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
q
JA
JC
COLLECTOR
1
R
83.3
q
2
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 1.0 mA, I = 0)
BC546
BC547
BC548
V
V
V
65
45
30
—
—
—
—
—
—
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
C
B
Collector–Base Breakdown Voltage
(I = 100 µAdc)
C
BC546
BC547
BC548
80
50
30
—
—
—
—
—
—
Emitter–Base Breakdown Voltage
BC546
BC547
BC548
6.0
6.0
6.0
—
—
—
—
—
—
(I = 10 mA, I = 0)
E
C
Collector Cutoff Current
(V = 70 V, V = 0)
I
CES
BC546
BC547
BC548
BC546/547/548
—
—
—
—
0.2
0.2
0.2
—
15
15
15
4.0
nA
CE
BE
(V = 50 V, V = 0)
CE
BE
(V = 35 V, V = 0)
CE
BE
(V = 30 V, T = 125°C)
µA
CE
A
Semiconductor Components Industries, LLC, 2001
242
Publication Order Number:
May, 2001 – Rev. 3
BC546/D
BC546 BC546B BC547A BC547B BC547C BC548B BC548C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
—
(I = 10 µA, V = 5.0 V)
BC547A
BC546B/547B/548B
BC548C
—
—
—
90
150
270
—
—
—
C
CE
(I = 2.0 mA, V = 5.0 V)
BC546
BC547
BC548
BC547A
BC546B/547B/548B
BC547C/BC548C
110
110
110
110
200
420
—
—
—
180
290
520
450
800
800
220
450
800
C
CE
(I = 100 mA, V = 5.0 V)
BC547A/548A
BC546B/547B/548B
BC548C
—
—
—
120
180
300
—
—
—
C
CE
Collector–Emitter Saturation Voltage
(I = 10 mA, I = 0.5 mA)
V
V
V
CE(sat)
—
—
—
0.09
0.2
0.3
0.25
0.6
0.6
C
B
(I = 100 mA, I = 5.0 mA)
C
B
(I = 10 mA, I = See Note 1)
C
B
Base–Emitter Saturation Voltage
(I = 10 mA, I = 0.5 mA)
—
0.7
—
V
V
BE(sat)
C
B
Base–Emitter On Voltage
(I = 2.0 mA, V = 5.0 V)
V
BE(on)
0.55
—
—
—
0.7
0.77
C
CE
(I = 10 mA, V = 5.0 V)
C
CE
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
T
MHz
(I = 10 mA, V = 5.0 V, f = 100 MHz)
BC546
BC547
BC548
150
150
150
300
300
300
—
—
—
C
CE
Output Capacitance
(V = 10 V, I = 0, f = 1.0 MHz)
C
—
1.7
4.5
pF
pF
—
obo
CB
C
Input Capacitance
(V = 0.5 V, I = 0, f = 1.0 MHz)
C
ibo
—
10
—
EB
C
Small–Signal Current Gain
h
fe
(I = 2.0 mA, V = 5.0 V, f = 1.0 kHz)
BC546
BC547/548
BC547A
BC546B/547B/548B
BC547C/548C
125
125
125
240
450
—
—
220
330
600
500
900
260
500
900
C
CE
Noise Figure
NF
dB
(I = 0.2 mA, V = 5.0 V, R = 2 kW,
f = 1.0 kHz, ∆f = 200 Hz)
BC546
BC547
BC548
—
—
—
2.0
2.0
2.0
10
10
10
C
CE
S
Note 1: I is value for which I = 11 mA at V = 1.0 V.
B
C
CE
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243
BC546 BC546B BC547A BC547B BC547C BC548B BC548C
BC547/BC548
2.0
1.5
1.0
V
= 10 V
T = 25°C
A
0.9
0.8
0.7
CE
T = 25°C
A
V
@ I /I = 10
BE(sat)
C B
1.0
0.8
V
BE(on)
@ V = 10 V
CE
0.6
0.5
0.4
0.3
0.6
0.4
0.3
0.2
0.1
V
@ I /I = 10
C B
CE(sat)
0.2
0
0.1
0.2
0.5 1.0
2.0
5.0 10
20
50 100 200
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
2.0
1.6
1.2
0.8
0.4
0
1.0
1.2
1.6
2.0
2.4
2.8
T = 25°C
-55°C to +125°C
A
I
C
= 200 mA
I
C
= 50 mA
I = 100 mA
C
I
=
I =
C
C
10 mA 20 mA
0.02
0.1
1.0
10 20
0.2
1.0
10
100
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 3. Collector Saturation Region
Figure 4. Base–Emitter Temperature Coefficient
10
7.0
5.0
400
300
T = 25°C
A
200
C
ib
V
= 10 V
CE
100
80
T = 25°C
A
3.0
2.0
C
ob
60
40
30
1.0
20
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mAdc)
C
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
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244
BC546 BC546B BC547A BC547B BC547C BC548B BC548C
BC546
1.0
T = 25°C
A
V
= 5 V
CE
0.8
T = 25°C
A
V
@ I /I = 10
C B
BE(sat)
2.0
1.0
0.5
0.6
0.4
0.2
0
V
@ V = 5.0 V
BE
CE
0.2
V
@ I /I = 10
C B
CE(sat)
0.1 0.2
1.0
10
100
0.2
0.5 1.0 2.0
5.0
10 20
50 100 200
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 7. DC Current Gain
Figure 8. “On” Voltage
2.0
1.6
1.2
0.8
0.4
0
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
T = 25°C
A
100 mA
200 mA
20 mA
50 mA
θ
for V
BE
VB
-55°C to 125°C
I
=
C
10 mA
0.02 0.05 0.1 0.2
0.5
1.0 2.0
5.0 10
20
0.2
0.5 1.0 2.0
5.0
10 20
50
100 200
I , BASE CURRENT (mA)
B
I , COLLECTOR CURRENT (mA)
C
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
40
T = 25°C
A
V
= 5 V
CE
500
T = 25°C
A
20
10
C
ib
200
100
50
6.0
4.0
C
ob
20
2.0
0.1 0.2
0.5
1.0 2.0
5.0
10 20
50
100
1.0
5.0 10
50 100
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
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