概述
数据手册
替代型号BC547 概述
Amplifier Transistors(NPN Silicon) 放大器晶体管（ NPN硅）
BC547 数据手册
通过下载BC547数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载Order this document
by BC546/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS
2
3
BC
BC
BC
546
547
548
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Unit
Vdc
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
V
CEO
V
CBO
V
EBO
65
45
30
80
50
30
Vdc
6.0
100
Vdc
Collector Current — Continuous
I
C
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
83.3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 1.0 mA, I = 0)
BC546
BC547
BC548
V
65
45
30
—
—
—
—
—
—
V
V
V
(BR)CEO
C
B
Collector–Base Breakdown Voltage
(I = 100 µAdc)
C
BC546
BC547
BC548
V
80
50
30
—
—
—
—
—
—
(BR)CBO
Emitter–Base Breakdown Voltage
BC546
BC547
BC548
V
6.0
6.0
6.0
—
—
—
—
—
—
(BR)EBO
(I = 10 A, I = 0)
E
C
Collector Cutoff Current
I
CES
(V
CE
(V
CE
(V
CE
(V
CE
= 70 V, V
= 50 V, V
= 35 V, V
= 0)
= 0)
= 0)
BC546
BC547
BC548
BC546/547/548
—
—
—
—
0.2
0.2
0.2
—
15
15
15
4.0
nA
BE
BE
BE
= 30 V, T = 125°C)
µA
A
REV 1
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
—
(I = 10 µA, V
= 5.0 V)
CE
BC547A/548A
BC546B/547B/548B
BC548C
—
—
—
90
150
270
—
—
—
C
(I = 2.0 mA, V
C CE
= 5.0 V)
BC546
BC547
BC548
BC547A/548A
BC546B/547B/548B
BC547C/BC548C
110
110
110
110
200
420
—
—
—
180
290
520
450
800
800
220
450
800
(I = 100 mA, V
C
= 5.0 V)
CE
BC547A/548A
BC546B/547B/548B
BC548C
—
—
—
120
180
300
—
—
—
Collector–Emitter Saturation Voltage
(I = 10 mA, I = 0.5 mA)
V
V
V
CE(sat)
—
—
—
0.09
0.2
0.3
0.25
0.6
0.6
C
B
(I = 100 mA, I = 5.0 mA)
C
C
B
B
(I = 10 mA, I = See Note 1)
Base–Emitter Saturation Voltage
(I = 10 mA, I = 0.5 mA)
—
0.7
—
V
V
BE(sat)
C
B
Base–Emitter On Voltage
V
BE(on)
(I = 2.0 mA, V
(I = 10 mA, V
C
= 5.0 V)
CE
= 5.0 V)
CE
0.55
—
—
—
0.7
0.77
C
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
T
MHz
(I = 10 mA, V
= 5.0 V, f = 100 MHz)
CE
BC546
BC547
BC548
150
150
150
300
300
300
—
—
—
C
Output Capacitance
(V = 10 V, I = 0, f = 1.0 MHz)
C
—
1.7
4.5
pF
pF
—
obo
CB
Input Capacitance
(V = 0.5 V, I = 0, f = 1.0 MHz)
C
C
—
10
—
ibo
EB
C
Small–Signal Current Gain
h
fe
(I = 2.0 mA, V
C
= 5.0 V, f = 1.0 kHz)
BC546
BC547/548
BC547A/548A
BC546B/547B/548B
BC547C/548C
125
125
125
240
450
—
—
220
330
600
500
900
260
500
900
CE
Noise Figure
NF
dB
(I = 0.2 mA, V
f = 1.0 kHz, ∆f = 200 Hz)
= 5.0 V, R = 2 k ,
BC546
BC547
BC548
—
—
—
2.0
2.0
2.0
10
10
10
C
CE
S
Note 1: I is value for which I = 11 mA at V = 1.0 V.
CE
B
C
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2.0
1.5
1.0
0.9
V
= 10 V
= 25°C
T
= 25°C
CE
A
T
A
0.8
0.7
V
@ I /I = 10
C B
BE(sat)
1.0
0.8
V
@ V
= 10 V
CE
0.6
0.5
0.4
BE(on)
0.6
0.4
0.3
0.3
0.2
0.1
V
@ I /I = 10
C B
CE(sat)
0.2
0
0.2
0.5
1.0
2.0
5.0 10
20
50
100
200
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
I
, COLLECTOR CURRENT (mAdc)
I , COLLECTOR CURRENT (mAdc)
C
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
2.0
1.6
1.2
0.8
0.4
0
1.0
1.2
1.6
2.0
2.4
2.8
T
= 25
°
C
–55°C to +125°C
A
I
= 200 mA
C
I
= 50 mA
I = 100 mA
C
I
=
I =
C
C
C
10 mA 20 mA
0.02
0.1
1.0
, BASE CURRENT (mA)
10 20
0.2
1.0
I , COLLECTOR CURRENT (mA)
C
10
100
I
B
Figure 3. Collector Saturation Region
Figure 4. Base–Emitter Temperature Coefficient
BC547/BC548
10
7.0
5.0
400
300
T
= 25°C
A
200
C
ib
V
T
= 10 V
CE
= 25
100
80
°C
3.0
2.0
A
C
ob
60
40
30
1.0
20
0.4 0.6 0.8 1.0
2.0
4.0 6.0 8.0 10
20
40
0.5 0.7 1.0
2.0
I , COLLECTOR CURRENT (mAdc)
C
3.0
5.0 7.0 10
20
30
50
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
BC547/BC548
1.0
T
= 25°C
A
V
= 5 V
CE
= 25
0.8
T
°C
A
V
@ I /I = 10
C B
BE(sat)
2.0
1.0
0.5
0.6
0.4
0.2
V
@ V
= 5.0 V
CE
BE
0.2
V
@ I /I = 10
C B
CE(sat)
0
0.1 0.2
1.0
10
100
0.2
0.5
1.0
2.0
I , COLLECTOR CURRENT (mA)
C
5.0
10
20
50
100 200
I
, COLLECTOR CURRENT (mA)
C
Figure 7. DC Current Gain
Figure 8. “On” Voltage
2.0
1.6
1.2
0.8
0.4
0
–1.0
–1.4
–1.8
–2.2
–2.6
–3.0
T
= 25°C
A
100 mA
200 mA
20 mA
50 mA
θ
for V
BE
VB
–55°C to 125°C
I
=
C
10 mA
0.02
0.05 0.1
0.2
0.5
1.0 2.0
5.0
10
20
0.2
0.5
1.0
2.0
I , COLLECTOR CURRENT (mA)
C
5.0
10
20
50
100 200
I
, BASE CURRENT (mA)
B
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
BC546
40
T
= 25°C
V
= 5 V
A
CE
= 25°C
500
T
A
20
10
C
ib
200
100
50
6.0
4.0
C
ob
20
2.0
0.1 0.2
0.5
1.0
2.0
5.0
10
20
50
100
1.0
5.0 10
I , COLLECTOR CURRENT (mA)
C
50 100
V
, REVERSE VOLTAGE (VOLTS)
R
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
MIN
MILLIMETERS
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
–––
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
–––
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
D
J
X X
G
H
V
SECTION X–X
C
–––
–––
0.105
0.100
–––
2.66
2.54
–––
1
N
R
V
0.115
0.135
2.93
3.43
N
–––
–––
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
CASE 029–04
(TO–226AA)
ISSUE AD
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecificallydisclaimsanyandallliability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA/EUROPE: Motorola Literature Distribution;
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609
INTERNET: http://Design–NET.com
HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
BC546/D
◊
BC547 CAD模型
引脚图
封装焊盘图
BC547 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| BC547CG | ONSEMI | Amplifier Transistors NPN Silicon | 完全替代 |
|
| BC547CZL1G | ONSEMI | Amplifier Transistors NPN Silicon | 完全替代 |
|
| BC547BTA | ONSEMI | Transistor NPN Silicon Plastic | 功能相似 |
|
BC547 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| BC547-18 | MOTOROLA | 100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR | 获取价格 |
|
| BC547-5 | MOTOROLA | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon | 获取价格 |
|
| BC547-9/D29Z | TI | 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 | 获取价格 |
|
| BC547-A | INFINEON | Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon, TO-92D, 3 PIN | 获取价格 |
|
| BC547-AMMO | NXP | TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Small Signal | 获取价格 |
|
| BC547-AP | MCC | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3 | 获取价格 |
|
| BC547-AP-HF | MCC | Small Signal Bipolar Transistor, | 获取价格 |
|
| BC547-C | SAMSUNG | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN | 获取价格 |
|
| BC547-T/R | NXP | 100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN | 获取价格 |
|
| BC547/550 | FAIRCHILD | Switching and Applications | 获取价格 |
|
BC547 相关文章
Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
- 2024-09-20
- 6
Bourns 精密环境传感器产品选型手册(英文版)
- 2024-09-20
- 9
Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
- 2024-09-20
- 8
Bourns GMOV 混合过压保护组件产品选型手册(英文版)
- 2024-09-20
- 6
