BC549B [ONSEMI]
Low Noise Transistors NPN Silicon; 低噪声晶体管NPN硅
| 型号： | BC549B |
| 厂家： | 
ONSEMI |
| 描述： | Low Noise Transistors NPN Silicon |
| 文件： | 总4页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Low Noise Transistors
NPN Silicon
BC549B,C
BC550B,C
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
BC549
30
BC550
45
Unit
Vdc
V
CEO
V
CBO
V
EBO
30
50
Vdc
5.0
Vdc
Collector Current — Continuous
I
C
100
mAdc
1
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
2
3
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
C
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
COLLECTOR
1
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
q
JA
JC
R
83.3
q
2
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 10 mAdc, I = 0)
V
V
V
Vdc
(BR)CEO
BC549B,C
BC550B,C
30
45
—
—
—
—
C
B
Collector–Base Breakdown Voltage
(I = 10 µAdc, I = 0)
Vdc
Vdc
(BR)CBO
(BR)EBO
BC549B,C
BC550B,C
30
50
—
—
—
—
C
E
Emitter–Base Breakdown Voltage
(I = 10 mAdc, I = 0)
5.0
—
—
E
C
Collector Cutoff Current
(V = 30 V, I = 0)
I
CBO
—
—
—
—
15
5.0
nAdc
µAdc
CB
E
(V = 30 V, I = 0, T = +125°C)
CB
E
A
Emitter Cutoff Current
(V = 4.0 Vdc, I = 0)
I
—
—
15
nAdc
EBO
EB
C
Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
February, 2001 – Rev. 1
BC549B/D
BC549B,C BC550B,C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
—
(I = 10 µAdc, V = 5.0 Vdc)
BC549B/550B
BC549C/550C
BC549B/550B
BC549C/550C
100
100
200
420
150
270
290
500
—
—
450
800
C
CE
(I = 2.0 mAdc, V = 5.0 Vdc)
C
CE
Collector–Emitter Saturation Voltage
(I = 10 mAdc, I = 0.5 mAdc)
V
V
Vdc
CE(sat)
—
—
—
0.075
0.3
0.25
0.25
0.6
0.6
C
B
(I = 10 mAdc, I = see note 1)
C
B
(I = 100 mAdc, I = 5.0 mAdc, see note 2)
C
B
Base–Emitter Saturation Voltage
(I = 100 mAdc, I = 5.0 mAdc)
—
1.1
—
Vdc
Vdc
BE(sat)
C
B
Base–Emitter On Voltage
(I = 10 µAdc, V = 5.0 Vdc)
V
BE(on)
—
—
0.55
0.52
0.55
0.62
—
—
0.7
C
CE
(I = 100 µAdc, V = 5.0 Vdc)
C
CE
(I = 2.0 mAdc, V = 5.0 Vdc)
C
CE
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
—
—
250
2.5
—
—
MHz
pF
T
(I = 10 mAdc, V = 5.0 Vdc, f = 100 MHz)
C
CE
Collector–Base Capacitance
(V = 10 Vdc, I = 0, f = 1.0 MHz)
C
cbo
CB
E
Small–Signal Current Gain
h
fe
—
(I = 2.0 mAdc, V = 5.0 V, f = 1.0 kHz)
BC549B/BC550B
BC549C/BC550C
240
450
330
600
500
900
C
CE
Noise Figure
dB
(I = 200 µAdc, V = 5.0 Vdc, R = 2.0 kΩ, f = 1.0 kHz)
NF
NF
—
—
0.6
—
2.5
10
C
CE
S
1
2
(I = 200 µAdc, V = 5.0 Vdc, R = 100 kΩ, f = 1.0 kHz)
C
CE
S
NOTES:
1. I is value for which I = 11 mA at V = 1.0 V.
B
C
CE
2. Pulse test = 300 µs – Duty cycle = 2%.
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2
BC549B,C BC550B,C
2.0
1.5
1.0
T = 25°C
V
= 10 V
0.9
0.8
0.7
0.6
0.5
0.4
A
CE
T = 25°C
A
V
@ I /I = 10
C B
BE(sat)
1.0
0.8
V
BE(on)
@ V = 10 V
CE
0.6
0.4
0.3
0.3
0.2
0.1
0
V
@ I /I = 10
C B
CE(sat)
0.2
0.2
0.5
1.0 2.0
5.0
10
20
50
100 200
0.1 0.2
0.5
1.0 2.0
5.0 10
20
50
100
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 2. Normalized DC Current Gain
Figure 3. “Saturation” and “On” Voltages
10
7.0
5.0
400
300
200
T = 25°C
A
C
ib
100
80
V
= 10 V
CE
T = 25°C
3.0
2.0
A
60
C
ob
40
30
20
1.0
0.5 0.7 1.0
2.0
5.0 7.0 10
20
50
0.4 0.6
1.0
2.0
4.0
10
20
40
I , COLLECTOR CURRENT (mAdc)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Current–Gain — Bandwidth Product
Figure 5. Capacitance
170
160
150
V
= 10 V
CE
f = 1.0 kHz
140
130
120
T = 25°C
A
0.1
0.2
0.5
1.0
2.0
5.0
10
I , COLLECTOR CURRENT (mAdc)
C
Figure 6. Base Spreading Resistance
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3
BC549B,C BC550B,C
PACKAGE DIMENSIONS
CASE 029–04
(TO–226AA)
ISSUE AD
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
INCHES
DIM MIN MAX
MILLIMETERS
K
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
12.70
6.35
2.04
---
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
---
A
B
C
D
F
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
---
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
---
D
J
X X
G
G
H
J
H
V
SECTION X–X
K
L
C
---
---
N
P
R
V
0.105
0.100
---
2.66
2.54
---
1
N
0.115
0.135
2.93
3.43
N
---
---
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
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