BC556BU [ONSEMI]
100 mA, 65 V PNP Bipolar Junction Transistor - Epitaxial Silicon ;型号: | BC556BU |
厂家: | ONSEMI |
描述: | 100 mA, 65 V PNP Bipolar Junction Transistor - Epitaxial Silicon |
文件: | 总10页 (文件大小:382K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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January 2016
BC556 / BC557 / BC558 / BC559 / BC560
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier
• High-Voltage: BC556, VCEO = -65 V
• Low-Noise: BC559, BC560
TO-92
1. Collector
• Complement to BC546, BC547, BC548, BC549, and BC550
2. Base
3. Emitter
1
2
3
1
2
3
Straight Lead
Bulk Packing
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
BC556ABU
BC556ATA
BC556BTA
BC556BTF
BC556BTFR
BC557ATA
BC557BTA
BC557BTF
BC558BTA
BC559BTA
BC559CTA
BC560CTA
Marking
BC556A
BC556A
BC556B
BC556B
BC556B
BC557A
BC557B
BC557B
BC558B
BC559B
BC559C
BC560C
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Bulk
Ammo
Ammo
Tape and Reel
Tape and Reel
Ammo
Ammo
Tape and Reel
Ammo
Ammo
Ammo
Ammo
© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
1
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
-80
Unit
BC556
VCBO
Collector-Base Voltage
Collector-Emitter Voltage
BC557 / BC560
BC558 / BC559
BC556
-50
V
-30
-65
VCEO
BC557 / BC560
BC558 / BC559
-45
V
-30
VEBO
IC
Emitter-Base Voltage
Collector Current (DC)
-5
V
-100
-200
-200
150
mA
mA
mA
°C
ICP
Peak Collector Current (Pulse)
Peak Base Current (Pulse)
Junction Temperature
IBP
TJ
TSTG
Storage Temperature Range
-65 to +150
°C
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Max.
500
4.0
Unit
mW
Total Power Dissipation
Derate Above 25°C
mW/°C
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
250
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
2
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
ICBO
Parameter
Collector Cut-Off Current
DC Current Gain
Conditions
VCB = -30 V, IE = 0
Min.
Typ.
Max.
-15
Unit
nA
hFE
VCE = -5 V, IC = -2 mA
IC = -10 mA, IB = -0.5 mA
IC = -100 mA, IB = -5 mA
IC = -10 mA, IB = -0.5 mA
IC = -100 mA, IB = -5 mA
VCE = -5 V, IC = -2 mA
110
800
-90
-300
-650
Collector-Emitter Saturation
Voltage
VCE(sat)
mV
mV
mV
-250
-700
-900
-660
VBE(sat) Collector-Base Saturation Voltage
-600
-750
-800
VBE(on) Base-Emitter On Voltage
VCE = -5 V, IC = -10 mA
VCE = -5 V, IC = -10 mA,
f = 10 MHz
fT
Current Gain Bandwidth Product
150
MHz
pF
Cob
Output Capacitance
VCB = -10 V, IE = 0, f = 1 MHz
6
BC556 / BC557 / BC558
2
10
4
VCE = -5 V, IC = -200 μA,
f = 1 kHz, RG = 2 kΩ
BC559 / BC560
BC559
1
Noise
Figure
NF
dB
1.2
1.2
4.0
2.0
VCE = -5 V, IC = -200 μA,
RG = 2 kΩ, f = 30 to 15000 MHz
BC560
hFE Classification
Classification
hFE
A
B
C
110 ~ 220
200 ~ 450
420 ~ 800
© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
3
Typical Performance Characteristics
1000
100
10
-50
VCE = -5V
TA = 150oC
-45
IB = -400μA
IB = -350μA
-40
IB = -300μA
TA = 25oC
TA = -55oC
-35
IB = -250μA
-30
IB = -200μA
-25
-20
IB = -150μA
-15
IB = -100μA
-10
IB = -50μA
-5
-0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-1
-10
-100
-1000
IC [mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC Current Gain
-10
-1000
-100
-10
IC = 20 IB
IC = 20 IB
-1
T
A = 25oC
TA = 150oC
-0.1
-0.01
TA = -55oC
TA = 25oC
TA = 150oC
TA = -55oC
-1
-0.0
-1
-10
-100
-1000
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
VBE(sat) [V], BASE-EMITTER SATURATION VOLTAGE
IC [mA], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
-1000
VCE = -5V
f=1MHz
IE = 0
10
-100
-10
TA = 150oC
TA = 25oC
TA = -55oC
1
-0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1
-10
-100
VBE(on) [V], BASE-EMITTER ON VOLTAGE
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Collector Output Capacitance
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
www.fairchildsemi.com
4
Typical Performance Characteristics (Continued)
1000
1000
100
10
VCE = -5V
100
10
1
-1
-10
0
50
100
150
AMBIENT TEMPERATURE, [oC]
IC[mA], COLLECTOR CURRENT
Figure 7. Current Gain Bandwidth Product
Figure 8. Power Deration
1000
100
10
50%
30%
10%
5%
2%
Rthja(t)=r(t)*Rthja
Rthja=250oC/W
D=1%
1
Single Pulse
0.1
0.01
1E-5
1E-4
1E-3
0.01
0.1
1
10
100
1000
t1, time(sec)
Figure 9. Normalized Transient Thermal Resistance
© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
5
Physical Dimensions
Figure 10. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION, BULK
© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
6
Physical Dimensions (Continued)
Figure 11. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM, AMMO, TAPE AND REEL
© 2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
7
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intended to be an exhaustive list of all such trademarks.
OPTOPLANAR®
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®*
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PowerXS™
BitSiC¥
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Programmable Active Droop¥
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IntelliMAX¥
QFET®
QS¥
ISOPLANAR¥
Making Small Speakers Sound Louder
and Better™
MegaBuck¥
MICROCOUPLER¥
MicroFET¥
Quiet Series¥
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Current Transfer Logic¥
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax¥
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TRUECURRENT®*
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Saving our world, 1mW/W/kW at a time™
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Preliminary
No Identification Needed
Obsolete
First Production
Full Production
Not In Production
Rev. I77
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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