BC559BZL1 [ONSEMI]
100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN;
| 型号： | BC559BZL1 |
| 厂家： | 
ONSEMI |
| 描述： | 100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-04, TO-226AA, 3 PIN 放大器 晶体管 |
| 文件： | 总3页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ON Semiconductort
Low Noise Transistors
PNP Silicon
BC559B, C
BC560C
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
BC559 BC560
Unit
Vdc
V
CEO
V
CBO
V
EBO
–30
–30
–45
–50
Vdc
–5.0
Vdc
Collector Current — Continuous
I
C
–100
mAdc
1
2
3
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
COLLECTOR
1
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
q
JA
JC
R
83.3
q
2
BASE
3
EMITTER
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = –10 mAdc, I = 0)
V
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
BC559
BC560
–30
–45
—
—
—
—
C
B
Collector–Base Breakdown Voltage
(I = –10 µAdc, I = 0)
V
V
Vdc
Vdc
BC559
BC560
–30
–50
—
—
—
—
C
E
Emitter–Base Breakdown Voltage
(I = –10 mAdc, I = 0)
–5.0
—
—
E
C
Collector Cutoff Current
(V = –30 Vdc, I = 0)
I
CBO
—
—
—
—
–15
–5.0
nAdc
µAdc
CB
E
(V = –30 Vdc, I = 0, T = +125°C)
CB
E
A
Emitter Cutoff Current
(V = –4.0 Vdc, I = 0)
I
—
—
–15
nAdc
EBO
EB
C
Semiconductor Components Industries, LLC, 2001
255
Publication Order Number:
September, 2001 – Rev. 0
BC559B/D
BC559B, C BC560C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
h
FE
—
(I = –10 µAdc, V = –5.0 Vdc)
BC559B
BC559C/560C
BC559B
100
100
180
380
150
270
290
500
—
—
460
800
C
CE
(I = –2.0 mAdc, V = –5.0 Vdc)
C
CE
BC559C/560C
Collector–Emitter Saturation Voltage
(I = –10 mAdc, I = –0.5 mAdc)
V
V
Vdc
CE(sat)
—
—
—
–0.075
–0.3
–0.25
–0.25
–0.6
—
C
B
(I = –10 mAdc, I = see note 1)
C
B
(I = –100 mAdc, I = –5.0 mAdc, see note 2)
C
B
Base–Emitter Saturation Voltage
(I = –100 mAdc, I = –5.0 mAdc)
—
–1.1
—
Vdc
Vdc
BE(sat)
C
B
Base–Emitter On Voltage
(I = –10 µAdc, V = –5.0 Vdc)
V
BE(on)
—
—
–0.55
–0.52
–0.55
–0.62
—
—
–0.7
C
CE
(I = –100 µAdc, V = –5.0 Vdc)
C
CE
(I = –2.0 mAdc, V = –5.0 Vdc)
C
CE
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
f
—
—
250
2.5
—
—
MHz
pF
T
(I = –10 mAdc, V = –5.0 Vdc, f = 100 MHz)
C
CE
Collector–Base Capacitance
(V = –10 Vdc, I = 0, f = 1.0 MHz)
C
cbo
CB
E
Small–Signal Current Gain
h
fe
—
(I = –2.0 mAdc, V = –5.0 V, f = 1.0 kHz)
BC559B
BC559C/BC560C
240
450
330
600
500
900
C
CE
Noise Figure
dB
(I = –200 µAdc, V = –5.0 Vdc, R = 2.0 kΩ, f = 1.0 kHz)
NF
NF
—
—
0.5
—
2.0
10
C
CE
S
1
2
(I = –200 µAdc, V = –5.0 Vdc, R = 100 kΩ, f = 1.0 kHz, ∆f = 200 kHz)
C
CE
S
NOTES:
1. I is value for which I = –11 mA at V = –1.0 V.
B
C
CE
2. Pulse test = 300 µs – Duty cycle = 2%.
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256
BC559B, C BC560C
2.0
1.5
-1.0
T = 25°C
V
= -10 V
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
A
CE
T = 25°C
A
V
@ I /I = 10
C B
BE(sat)
1.0
0.8
V
BE(on)
@ V = -10 V
CE
0.6
0.4
0.3
-0.3
-0.2
-0.1
0
V
@ I /I = 10
C B
CE(sat)
0.2
-0.2 -0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100 -200
-0.1 -0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100
I , COLLECTOR CURRENT (mAdc)
C
I , COLLECTOR CURRENT (mAdc)
C
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
10
7.0
5.0
400
300
200
T = 25°C
A
C
ib
100
80
V
= -10 V
CE
3.0
2.0
60
T = 25°C
A
C
ob
40
30
20
1.0
-0.5 -0.7 -1.0
-2.0
-5.0 -7.0 -10
-20
-50
-0.4 -0.6 -1.0
-2.0
-4.0
-10
-20
-40
I , COLLECTOR CURRENT (mAdc)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Current–Gain — Bandwidth Product
Figure 4. Capacitance
170
160
150
V
CE
= -10 V
f = 1.0 kHz
T = 25°C
A
140
130
120
-0.1
-0.2
-0.5
-1.0
-2.0
-5.0
-10
I , COLLECTOR CURRENT (mAdc)
C
Figure 5. Base Spreading Resistance
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