BC635ZL1 [ONSEMI]

1000mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226, 3 PIN;
BC635ZL1
型号: BC635ZL1
厂家: ONSEMI    ONSEMI
描述:

1000mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, CASE 29-11, TO-226, 3 PIN

晶体管
文件: 总5页 (文件大小:69K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BC635, BC637, BC639,  
BC639−16  
High Current Transistors  
NPN Silicon  
http://onsemi.com  
Features  
Pb−Free Packages are Available*  
COLLECTOR  
2
3
BASE  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
1
Collector - Emitter Voltage  
V
V
V
Vdc  
CEO  
CBO  
EBO  
EMITTER  
BC635  
BC637  
BC639  
45  
60  
80  
Collector - Base Voltage  
Emitter - Base Voltage  
Vdc  
BC635  
BC637  
BC639  
45  
60  
80  
TO−92  
CASE 29  
STYLE 14  
5.0  
1.0  
Vdc  
Adc  
1
Collector Current − Continuous  
I
C
2
3
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
625  
5.0  
mW  
mW/°C  
A
D
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
800  
12  
mW  
mW/°C  
C
MARKING DIAGRAM  
Operating and Storage Junction  
Temperature Range  
T , T  
−55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
BC  
63x  
Symbol  
Max  
Unit  
AYWW G  
Thermal Resistance,  
Junction−to−Ambient  
R
200  
°C/W  
q
JA  
G
Thermal Resistance,  
Junction−to−Case  
R
83.3  
°C/W  
q
JC  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
BC63x = Device Code  
x = 5, 7, or 9  
A
= Assembly Location  
Y
= Year  
WW  
G
= Work Week  
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
September, 2005 − Rev. 5  
BC635/D  
BC635, BC637, BC639, BC639−16  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector − Emitter Breakdown Voltage (Note 1)  
(I = 10 mAdc, I = 0)  
V
Vdc  
(BR)CEO  
BC635  
BC637  
BC639  
45  
60  
80  
C
B
Collector − Emitter Zero−Gate Breakdown Voltage(Note 1)  
(I = 100 mAdc, I = 0)  
V
Vdc  
Vdc  
(BR)CES  
BC639−16  
120  
C
B
Collector − Base Breakdown Voltage  
(I = 100 mAdc, I = 0)  
V
(BR)CBO  
BC635  
BC637  
BC639  
45  
60  
80  
C
E
Emitter − Base Breakdown Voltage  
(I = 10 mAdc, I = 0)  
V
5.0  
Vdc  
(BR)EBO  
E
C
Collector Cutoff Current  
(V = 30 Vdc, I = 0)  
I
CBO  
100  
10  
nAdc  
mAdc  
CB  
E
(V = 30 Vdc, I = 0, T = 125°C)  
CB  
E
A
ON CHARACTERISTICS (Note 1)  
DC Current Gain  
h
FE  
(I = 5.0 mAdc, V = 2.0 Vdc)  
25  
40  
40  
40  
100  
25  
C
CE  
(I = 150 mAdc, V = 2.0 Vdc)  
BC635  
BC637  
BC639  
250  
160  
160  
250  
C
CE  
BC639−16ZLT1  
(I = 500 mA, V = 2.0 V)  
C
CE  
Collector − Emitter Saturation Voltage  
(I = 500 mAdc, I = 50 mAdc)  
V
0.5  
Vdc  
Vdc  
CE(sat)  
C
B
Base − Emitter On Voltage  
(I = 500 mAdc, V = 2.0 Vdc)  
V
BE(on)  
1.0  
C
CE  
DYNAMIC CHARACTERISTICS  
Current Gain − Bandwidth Product  
f
200  
7.0  
50  
MHz  
pF  
T
(I = 50 mAdc, V = 2.0 Vdc, f = 100 MHz)  
C
CE  
Output Capacitance  
C
ob  
(V = 10 Vdc, I = 0, f = 1.0 MHz)  
CB  
E
Input Capacitance  
C
pF  
ib  
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)  
EB  
C
1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.  
http://onsemi.com  
2
 
BC635, BC637, BC639, BC639−16  
500  
1000  
500  
V
CE  
= 2 V  
SOA = 1S  
200  
100  
P
D
T 25°C  
A
200  
100  
50  
50  
P
D
T 25°C  
C
20  
10  
5
BC635  
BC637  
BC639  
P
T 25°C  
A
D
2
1
P
D
T
25°C  
C
20  
1
2
3
4
5
7
10  
20 30 40 50 70 100  
1
3
5
10  
30 50 100  
300 500 1000  
V
CE  
, COLLECTOR−EMITTER VOLTAGE (VOLTS)  
I , COLLECTOR CURRENT (mA)  
C
Figure 1. Active Region Safe Operating Area  
Figure 2. DC Current Gain  
500  
300  
1
0.8  
0.6  
V
@ I /I = 10  
C B  
BE(sat)  
V
BE(on)  
@ V = 2 V  
CE  
V
CE  
= 2 V  
100  
50  
0.4  
0.2  
0
V
@ I /I = 10  
C B  
CE(sat)  
20  
1
10  
100  
1000  
1
10  
100  
1000  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 3. Current−Gain — Bandwidth Product  
Figure 4. “Saturation” and “On” Voltages  
−0.2  
−1.0  
V
CE  
= 2 VOLTS  
DT = 0°C to +100°C  
−1.6  
−2.2  
q
for V  
BE  
V
1
3
5
10  
30 50  
100  
300 500 1000  
I , COLLECTOR CURRENT (mA)  
C
Figure 5. Temperature Coefficients  
http://onsemi.com  
3
BC635, BC637, BC639, BC639−16  
DEVICE ORDERING INFORMATION  
Device  
BC635RL1  
Package  
Shipping  
TO−92  
2000 / Tape & Reel  
2000 / Tape & Reel  
BC635RL1G  
TO−92  
(Pb−Free)  
BC635ZL1  
TO−92  
2000 / Tape & Reel  
2000 / Tape & Reel  
BC635ZL1G  
TO−92  
(Pb−Free)  
BC637  
TO−92  
5000 Units / Box  
5000 Units / Box  
BC637G  
TO−92  
(Pb−Free)  
BC639  
TO−92  
5000 Units / Box  
5000 Units / Box  
BC639G  
TO−92  
(Pb−Free)  
BC639RL1  
TO−92  
2000 / Tape & Reel  
2000 / Tape & Reel  
BC639RL1G  
TO−92  
(Pb−Free)  
BC639ZL1  
TO−92  
2000 / Ammo Box  
2000 / Ammo Box  
BC639ZL1G  
TO−92  
(Pb−Free)  
BC639−16ZL1  
TO−92  
2000 / Ammo Box  
2000 / Ammo Box  
BC639−16ZL1G  
TO−92  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
4
BC635, BC637, BC639, BC639−16  
PACKAGE DIMENSIONS  
TO−92 (TO−226)  
CASE 29−11  
ISSUE AL  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
A
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND  
BEYOND DIMENSION K MINIMUM.  
P
L
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
4.45  
4.32  
3.18  
0.407  
1.15  
2.42  
0.39  
12.70  
6.35  
2.04  
−−−  
MAX  
5.20  
5.33  
4.19  
0.533  
1.39  
2.66  
0.50  
−−−  
SEATING  
PLANE  
K
A
B
C
D
G
H
J
0.175  
0.170  
0.125  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
−−−  
0.205  
0.210  
0.165  
0.021  
0.055  
0.105  
0.020  
−−−  
D
X X  
G
K
L
J
H
V
−−−  
−−−  
N
P
R
V
0.105  
0.100  
−−−  
2.66  
2.54  
−−−  
C
0.115  
0.135  
2.93  
3.43  
SECTION X−X  
−−−  
−−−  
1
N
STYLE 14:  
PIN 1. EMITTER  
N
2. COLLECTOR  
3. BASE  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
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PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
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USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
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Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
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Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
BC635/D  

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