BC63916-D27Z [ONSEMI]
NPN 中等功率晶体管;
| 型号： | BC63916-D27Z |
| 厂家： | 
ONSEMI |
| 描述： | NPN 中等功率晶体管 晶体管 |
| 文件： | 总6页 (文件大小：395K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
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regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
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associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
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BC63916
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
TO-92
1. Emitter
2. Collector
3. Base
1
1
2
2
3
3
Straight Lead
Bulk Packing
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
BC63916-D74Z
BC63916-D27Z
Top Mark
BC639-16
BC639-16
Package
TO-92 3L
TO-92 3L
Packing Method
Ammo
Tape and Reel
Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCER
VCES
Parameter
Collector-Emitter Voltage at RBE = 1 kΩ
Collector-Emitter Voltage
Value
Unit
V
100
100
V
VCEO
VEBO
Collector-Emitter Voltage
80
V
Emitter-Base Voltage
5
1
V
IC
Collector Current
A
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
Note:
1. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
© 2003 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
Publication Order Number:
BC63916-D74Z/D
Thermal Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Value
830
Unit
mW
Power Dissipation
Derate Above TA = 25°C
6.6
mW/°C
°C/W
RθJA
Thermal Resistance, Junction to Ambient
150
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Conditions
Min.
100
80
Typ.
Max.
Unit
V
Collector-Base Breakdown Voltage
IC = 100 μA, IE = 0
Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
IE = 10 μA, IC = 0
5.0
V
VCB = 30 V, IE = 0
100
10
nA
μA
IEBO
VEB = 5 V, IC = 0
hFE
hFE
hFE
1
2
3
VCE = 2 V, IC = 5 mA
VCE = 2 V, IC = 150 mA
VCE = 2 V, IC = 500 mA
IC = 500 mA, IB = 50 mA
VCE = 2 V, IC = 500 mA
25
100
25
DC Current Gain
250
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
0.5
1
V
V
VCE = 5 V, IC = 10 mA,
f = 50 MHz
fT
Current Gain Bandwidth Product
100
MHz
www.onsemi.com
2
Typical Performance Characteristics
250
1.2
1.0
0.8
0.6
0.4
0.2
0.0
VCE = 2 V
VCE = 2 V
TA = 150oC
200
TA = 100oC
TA = 100oC
TA = 150oC
TA = 25oC
150
100
50
TA = 0oC
TA = 25oC
TA = -55oC
TA = 0oC
TA = -55oC
0
1E-3
0.01
0.1
1
1E-3
0.01
0.1
1
IC - COLLECTOR CURRENT (A)
IC - COLLECTOR CURRENT (A)
Figure 1. DC Current Gain
Figure 2. Base-Emitter On Voltage
1
10
IC = 10IB
IC = 10IB
0.1
1
0.01
1E-3
0.1
1E-3
0.01
0.1
1
0.01
0.1
1
IC - COLLECTOR CURRENT (A)
IC - COLLECTOR CURRENT (A)
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
www.onsemi.com
3
Physical Dimensions
Figure 5. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form
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4
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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