BC80740MTF [ONSEMI]

PNP外延硅晶体管;
BC80740MTF
型号: BC80740MTF
厂家: ONSEMI    ONSEMI
描述:

PNP外延硅晶体管

PC 开关 光电二极管 晶体管
文件: 总8页 (文件大小:293K)
中文:  中文翻译
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November 2014  
BC807 / BC808  
PNP Epitaxial Silicon Transistor  
Features  
3
• Switching and Amplifier Applications  
• Suitable for AF-Driver Stages and Low Power Output Stages  
• Complement to BC817 / BC818  
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
Ordering Information  
Part Number  
BC80716MTF  
BC80725MTF  
BC80740MTF  
BC80840MTF  
Marking  
9FA  
Package  
Packing Method  
SOT-23 3L  
SOT-23 3L  
SOT-23 3L  
SOT-23 3L  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Tape and Reel  
9FB  
9FC  
9GC  
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.  
Symbol  
Parameter  
Value  
-50  
Unit  
BC807  
BC808  
BC807  
BC808  
VCES  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
V
-30  
-45  
VCEO  
V
-25  
VEBO  
IC  
Emitter-Base Voltage  
Collector Current (DC)  
Junction Temperature  
Storage Temperature  
-5  
V
-800  
150  
mA  
°C  
°C  
TJ  
TSTG  
-65 to +150  
© 2002 Fairchild Semiconductor Corporation  
BC807 / BC808 Rev. 1.1.0  
www.fairchildsemi.com  
1
Thermal Characteristics(1)  
Values are at TA = 25°C unless otherwise noted.  
Symbol  
PD  
Parameter  
Value  
310  
Unit  
mW  
Power Dissipation  
Derate Above 25°C  
2.48  
403  
mW/°C  
°C/W  
RθJA  
Thermal Resistance, Junction-to-Ambient  
Note:  
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.  
Electrical Characteristics  
Values are at TA = 25°C unless otherwise noted.  
Symbol  
Parameter  
Conditions  
Min.  
-45  
-25  
-50  
-30  
-5  
Typ. Max.  
Unit  
BC807  
BC808  
BC807  
BC808  
Collector-Emitter Breakdown  
Voltage  
BVCEO  
IC = -10 mA, IB = 0  
V
Collector-Emitter Breakdown  
Voltage  
BVCES  
IC = -0.1 mA, VBE = 0  
V
BVEBO  
ICES  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
Emitter Cut-Off Current  
IE = -0.1 mA, IC = 0  
V
VCE = -25 V, VBE = 0  
VEB = -4 V, IC = 0  
-100  
-100  
630  
nA  
nA  
IEBO  
hFE1  
hFE2  
VCE = -1 V, IC = -100 mA  
VCE = -1 V, IC = -300 mA  
IC = -500 mA, IB = -50 mA  
VCE = -1 V, IC = -300 mA  
100  
60  
DC Current Gain  
VCE(sat) Collector-Emitter Saturation Voltage  
BE(on) Base-Emitter On Voltage  
-0.7  
-1.2  
V
V
V
VCE = -5 V, IC = -10 mA,  
f = 50 MHz  
fT  
Current Gain Bandwidth Product  
Output Capacitance  
100  
MHz  
pF  
Cob  
VCB = -10 V, f = 1 MHz  
12  
hFE Classification  
Classification  
hFE1  
16  
25  
40  
100 ~ 250  
60 ~  
160 ~ 400  
100 ~  
250 ~ 630  
170 ~  
hFE2  
© 2002 Fairchild Semiconductor Corporation  
BC807 / BC808 Rev. 1.1.0  
www.fairchildsemi.com  
2
Typical Performance Characteristics  
-500  
-400  
-300  
-20  
-16  
-12  
-8  
-200  
IB = - 1.0mA  
IB = - 0.5mA  
-100  
-4  
IB = 0  
-0  
IB = 0  
-0  
-0  
-1  
-2  
-3  
-4  
-5  
-0  
-10  
-20  
-30  
-40  
-50  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 1. Static Characteristic  
Figure 2. Static Characteristic  
1000  
100  
10  
-10  
PULSE  
IC = 10 IB  
PULSE  
VCE = - 2.0V  
VCE(sat)  
-1  
- 1.0V  
-0.1  
VBE(sat)  
1
-0.1  
-0.01  
-0.1  
-1  
-10  
-100  
-1000  
-1  
-10  
-100  
-1000  
IC[mA], COLLECTOR CURRENT  
IC[mA], COLLECTOR CURRENT  
Figure 3. DC Current Gain  
Figure 4. Base-Emitter Saturation Voltage and  
Collector-Emitter Saturation Voltage  
100  
-1000  
-100  
-10  
f = 1.0MHz  
VCE = -1V  
PULSE  
Cib  
Cob  
10  
-1  
1
-0.1  
-0.1  
-0.4  
-1  
-10  
-100  
-0.5  
-0.6  
-0.7  
-0.8  
-0.9  
VCB[V], COLLECTOR-BASE VOLTAGE  
VEB[V], EMITTER-BASE VOLTAGE  
VBE[V], BASE-EMITTER VOLTAGE  
Figure 5. Base-Emitter On Voltage  
Figure 6. Input Output Capacitance  
© 2002 Fairchild Semiconductor Corporation  
BC807 / BC808 Rev. 1.1.0  
www.fairchildsemi.com  
3
Typical Performance Characteristics (Continued)  
1000  
VCE = -5.0V  
100  
10  
-1  
-10  
-100  
IC[mA], COLLECTOR CURRENT  
Figure 7. Current Gain Bandwidth Product  
© 2002 Fairchild Semiconductor Corporation  
BC807 / BC808 Rev. 1.1.0  
www.fairchildsemi.com  
4
Physical Dimensions  
0.95  
2.92 0.20  
3
1.40  
+0.20  
-0.15  
1.30  
2.20  
1.00  
1
2
0.60  
0.37  
(0.29)  
0.95  
1.90  
0.20  
A B  
1.90  
LAND PATTERN  
RECOMMENDATION  
SEE DETAIL A  
1.20 MAX  
(0.93)  
0.10  
0.00  
0.10  
C
C
2.40 0.30  
NOTES: UNLESS OTHERWISE SPECIFIED  
GAGE PLANE  
A) REFERENCE JEDEC REGISTRATION  
TO-236, VARIATION AB, ISSUE H.  
B) ALL DIMENSIONS ARE IN MILLIMETERS.  
C) DIMENSIONS ARE INCLUSIVE OF BURRS,  
MOLD FLASH AND TIE BAR EXTRUSIONS.  
D) DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M - 1994.  
0.23  
0.08  
0.25  
0.20 MIN  
E) DRAWING FILE NAME: MA03DREV10  
SEATING  
PLANE  
(0.55)  
SCALE: 2X  
Figure 8. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE  
© 2002 Fairchild Semiconductor Corporation  
BC807 / BC808 Rev. 1.1.0  
www.fairchildsemi.com  
5
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Rev. I72  
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