BC817-40LT3G [ONSEMI]

General Purpose Transistors(NPN Silicon); 通用晶体管( NPN硅)
BC817-40LT3G
型号: BC817-40LT3G
厂家: ONSEMI    ONSEMI
描述:

General Purpose Transistors(NPN Silicon)
通用晶体管( NPN硅)

晶体 晶体管 光电二极管
文件: 总4页 (文件大小:62K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BC817−16LT1,  
BC817−25LT1, BC817−40LT1  
General Purpose  
Transistors  
NPN Silicon  
http://onsemi.com  
Features  
COLLECTOR  
3
Pb−Free Packages are Available  
1
BASE  
MAXIMUM RATINGS  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol Value  
Unit  
V
2
EMITTER  
V
CEO  
V
CBO  
V
EBO  
45  
50  
V
5.0  
500  
V
Collector Current − Continuous  
I
C
mAdc  
3
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
1
2
THERMAL CHARACTERISTICS  
SOT−23  
CASE 318  
STYLE 6  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR5 Board, (Note 1)  
P
D
T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
MARKING DIAGRAM  
Thermal Resistance, Junction−to−Ambient  
Total Device Dissipation  
R
556  
°C/W  
q
JA  
P
D
Alumina Substrate, (Note 2) T = 25°C  
Derate above 25°C  
300  
2.4  
mW  
mW/°C  
A
xxD  
Thermal Resistance, Junction−to−Ambient  
Junction and Storage Temperature  
R
417  
°C/W  
°C  
q
JA  
T , T  
J
55 to  
+150  
stg  
xx  
D
= Specific Device Code  
= Date Code  
1. FR−5 = 1.0 x 0.75 x 0.062 in.  
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
June, 2004 − Rev. 6  
BC817−16LT/D  
 
BC817−16LT1, BC817−25LT1, BC817−40LT1  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
(I = −10 mA)  
C
V
45  
50  
V
V
V
(BR)CEO  
CollectorEmitter Breakdown Voltage  
V
(BR)CES  
(BR)EBO  
(V = 0, I = −10 mA)  
EB  
C
EmitterBase Breakdown Voltage  
V
5.0  
(I = −1.0 mA)  
E
Collector Cutoff Current  
I
CBO  
(V = 20 V)  
100  
5.0  
nA  
mA  
CB  
(V = 20 V, T = 150°C)  
CB  
A
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I = 100 mA, V = 1.0 V)  
BC817−16  
100  
160  
250  
40  
250  
400  
600  
C
CE  
BC817−25  
BC817−40  
(I = 500 mA, V = 1.0 V)  
C
CE  
CollectorEmitter Saturation Voltage  
(I = 500 mA, I = 50 mA)  
V
0.7  
V
V
CE(sat)  
C
B
BaseEmitter On Voltage  
(I = 500 mA, V = 1.0 V)  
V
BE(on)  
1.2  
C
CE  
SMALL−SIGNAL CHARACTERISTICS  
CurrentGain − Bandwidth Product  
f
100  
MHz  
pF  
T
(I = 10 mA, V = 5.0 Vdc, f = 100 MHz)  
C
CE  
Output Capacitance  
C
10  
obo  
(V = 10 V, f = 1.0 MHz)  
CB  
ORDERING INFORMATION  
Device  
Specific Marking Code  
Package  
Shipping  
BC817−16LT1  
6A  
6A  
SOT−23  
3,000 / Tape & Reel  
10,000 / Tape & Reel  
BC817−16LT1G  
SOT−23  
(Pb−Free)  
BC817−16LT3  
BC817−25LT1  
BC817−25LT1G  
6A  
6B  
6B  
SOT−23  
SOT−23  
3,000 / Tape & Reel  
10,000 / Tape & Reel  
3,000 / Tape & Reel  
10,000 / Tape & Reel  
SOT−23  
(Pb−Free)  
BC817−25LT3  
6B  
6B  
SOT−23  
BC817−25LT3G  
SOT−23  
(Pb−Free)  
BC817−40LT1  
6C  
6C  
SOT−23  
BC817−40LT1G  
SOT−23  
(Pb−Free)  
BC817−40LT3  
6C  
6C  
SOT−23  
BC817−40LT3G  
SOT−23  
(Pb−Free)  
SBC817−40LT1  
SBC817−40LT3  
6C  
6C  
SOT−23  
SOT−23  
3,000 / Tape & Reel  
10,000 / Tape & Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-  
cations Brochure, BRD8011/D.  
http://onsemi.com  
2
BC817−16LT1, BC817−25LT1, BC817−40LT1  
1000  
V
= 1 V  
CE  
T = 25°C  
J
100  
10  
0.1  
1.0  
10  
100  
1000  
I , COLLECTOR CURRENT (mA)  
C
Figure 1. DC Current Gain  
1.0  
0.8  
0.6  
0.4  
1.0  
T = 25°C  
T = 25°C  
A
J
V
@ I /I = 10  
C B  
BE(sat)  
0.8  
0.6  
0.4  
0.2  
0
V
BE(on)  
@ V = 1 V  
CE  
I
C
= 10 mA  
100 mA 300 mA  
500 mA  
0.2  
0
V
@ I /I = 10  
C B  
CE(sat)  
0.01  
0.1  
1
I , BASE CURRENT (mA)  
10  
100  
1
10  
100  
1000  
I , COLLECTOR CURRENT (mA)  
C
B
Figure 2. Saturation Region  
Figure 3. “On” Voltages  
100  
+1  
0
q
for V  
CE(sat)  
VC  
C
ib  
10  
−1  
−2  
C
ob  
q
for V  
BE  
VB  
1
0.1  
1
10  
100  
1000  
1
10  
100  
I , COLLECTOR CURRENT (mA)  
C
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 4. Temperature Coefficients  
Figure 5. Capacitances  
http://onsemi.com  
3
BC817−16LT1, BC817−25LT1, BC817−40LT1  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−09  
ISSUE AI  
NOTES:  
A
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
L
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH  
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM  
THICKNESS OF BASE MATERIAL.  
4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09.  
3
B
S
1
2
INCHES  
MILLIMETERS  
DIM  
A
B
C
D
G
H
J
MIN  
0.1102  
MAX  
0.1197  
MIN  
2.80  
1.20  
0.99  
0.36  
1.70  
0.10  
0.085  
0.45  
0.89  
2.10  
0.45  
MAX  
3.04  
1.40  
1.26  
0.50  
2.10  
0.25  
0.177  
0.60  
1.02  
2.50  
0.60  
0.0472 0.0551  
0.0385 0.0498  
0.0140 0.0200  
0.0670 0.0826  
0.0040 0.0098  
0.0034 0.0070  
0.0180 0.0236  
0.0350 0.0401  
0.0830 0.0984  
0.0177 0.0236  
V
G
C
K
L
S
J
V
H
K
D
STYLE 6:  
PIN 1. BASE  
2. EMITTER  
3. COLLECTOR  
SOLDERING FOOTPRINT*  
0.95  
0.037  
0.95  
0.037  
2.0  
0.079  
0.9  
0.035  
0.8  
0.031  
mm  
inches  
ǒ
Ǔ
SCALE 10:1  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA  
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada  
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
BC817−16LT1/D  

相关型号:

BC817-40NPN

DISCRETE SEMICONDUCTORS
NXP

BC817-40Q

45V NPN SMALL SIGNAL TRANSISTOR IN SOT23
DIODES

BC817-40Q-13-F

45V NPN SMALL SIGNAL TRANSISTOR IN SOT23
DIODES

BC817-40Q-7-F

Small Signal Bipolar Transistor, 0.5A I(C), NPN,
DIODES

BC817-40QA

45 V, 500 mA NPN general-purpose transistors
NXP

BC817-40QA

45 V, 500 mA NPN general-purpose transistorsProduction
NEXPERIA

BC817-40QAZ

TRANS NPN 45V 0.5A DFN1010D-3
ETC

BC817-40QB

45 V, 500 mA NPN general-purpose transistorsProduction
NEXPERIA

BC817-40QB-Q

45 V, 500 mA NPN general-purpose transistorsProduction
NEXPERIA

BC817-40QBH-Q

BC817QBH-Q seriesProduction
NEXPERIA

BC817-40QC

45 V, 500 mA NPN general-purpose transistorsProduction
NEXPERIA

BC817-40QC-Q

45 V, 500 mA NPN general-purpose transistorsProduction
NEXPERIA