BC818-40LT1 [ONSEMI]
NPN 双极晶体管;
| 型号： | BC818-40LT1 |
| 厂家： | 
ONSEMI |
| 描述： | NPN 双极晶体管 小信号双极晶体管 |
| 文件： | 总4页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC818-40LT1G
General Purpose
Transistors
NPN Silicon
http://onsemi.com
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
COLLECTOR
3
Compliant
1
MAXIMUM RATINGS
BASE
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Symbol
Value
25
Unit
V
2
V
CEO
CBO
EMITTER
V
30
V
V
EBO
5.0
V
3
Collector Current − Continuous
I
C
500
mAdc
THERMAL CHARACTERISTICS
Characteristic
1
2
Symbol
Max
Unit
SOT−23
CASE 318
STYLE 6
Total Device Dissipation FR−5 Board,
P
D
(Note 1) T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
Thermal Resistance,
R
q
JA
556
°C/W
Junction−to−Ambient
MARKING DIAGRAMS
Total Device Dissipation
P
D
Alumina Substrate, (Note 2) T = 25°C
300
2.4
mW
mW/°C
A
Derate above 25°C
6G M G
Thermal Resistance,
R
417
°C/W
q
JA
G
Junction−to−Ambient
1
Junction and Storage Temperature
T , T
J
−55 to +150
°C
stg
6G = Specific Device Code
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
ORDERING INFORMATION
†
Device
Package
Shipping
BC818−40LT1G
SOT−23
3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2009 − Rev. 2
BC818−40LT/D
BC818−40LT1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
V
25
30
−
−
−
−
−
−
V
V
V
(BR)CEO
(I = −10 mA)
C
Collector−Emitter Breakdown Voltage
V
(BR)CES
(BR)EBO
(V = 0, I = −10 mA)
EB
C
Emitter−Base Breakdown Voltage
V
5.0
(I = −1.0 mA)
E
Collector Cutoff Current
I
CBO
(V = 20 V)
−
−
−
−
100
5.0
nA
mA
CB
(V = 20 V, T = 150°C)
CB
A
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 100 mA, V = 1.0 V)
250
40
−
−
600
−
C
CE
(I = 500 mA, V = 1.0 V)
C
CE
Collector−Emitter Saturation Voltage
(I = 500 mA, I = 50 mA)
V
−
−
0.7
1.2
V
V
CE(sat)
C
B
Base−Emitter On Voltage
(I = 500 mA, V = 1.0 V)
V
BE(on)
−
−
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
100
−
−
−
MHz
pF
T
(I = 10 mA, V = 5.0 Vdc, f = 100 MHz)
C
CE
Output Capacitance
(V = 10 V, f = 1.0 MHz)
C
obo
−
10
CB
1000
100
10
V
= 1 V
CE
T = 25°C
J
0.1
1.0
10
100
1000
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
http://onsemi.com
2
BC818−40LT1G
1.0
0.8
0.6
0.4
1.0
T = 25°C
T = 25°C
A
J
V
@ I /I = 10
C B
BE(sat)
0.8
0.6
0.4
0.2
0
V
BE(on)
@ V = 1 V
CE
I
C
= 10 mA
100 mA 300 mA
500 mA
0.2
0
V
@ I /I = 10
C B
CE(sat)
0.01
0.1
1
I , BASE CURRENT (mA)
10
100
1
10
100
1000
I , COLLECTOR CURRENT (mA)
C
B
Figure 2. Saturation Region
Figure 3. “On” Voltages
100
+1
0
q
for V
CE(sat)
VC
C
ib
10
-1
-2
C
ob
q
for V
BE
VB
1
0.1
1
10
100
1000
1
10
100
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 4. Temperature Coefficients
Figure 5. Capacitances
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3
BC818−40LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
D
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEE VIEW C
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
3
H
E
E
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
c
1
2
MILLIMETERS
INCHES
b
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
0.25
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
e
q
A
L
A1
L1
VIEW C
H
E
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
ǒ
Ǔ
SCALE 10:1
0.8
0.031
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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BC818−40LT1/D
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