BCP68T3G [ONSEMI]
1A, 20V, NPN, Si, POWER TRANSISTOR, TO-261AA, HALOGEN FREE AND ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN;
| 型号： | BCP68T3G |
| 厂家： | 
ONSEMI |
| 描述： | 1A, 20V, NPN, Si, POWER TRANSISTOR, TO-261AA, HALOGEN FREE AND ROHS COMPLIANT, CASE 318E-04, TO-261, 4 PIN 开关 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCP68T1G
NPN Silicon
Epitaxial Transistor
This NPN Silicon Epitaxial Transistor is designed for use in low
voltage, high current applications. The device is housed in the
SOT−223 package, which is designed for medium power surface
mount applications.
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Features
MEDIUM POWER NPN SILICON
HIGH CURRENT TRANSISTOR
SURFACE MOUNT
• High Current
• The SOT−223 Package Can Be Soldered Using Wave or Reflow
• SOT−223 package ensures level mounting, resulting in improved
thermal conduction, and allows visual inspection of soldered joints.
The formed leads absorb thermal stress during soldering, eliminating
the possibility of damage to the die
COLLECTOR 2,4
BASE
1
• The PNP Complement is BCP69T1
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable*
EMITTER 3
4
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
2
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
SOT−223
CASE 318E
STYLE 1
C
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Symbol
Value
20
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
V
CBO
V
EBO
MARKING DIAGRAM
25
5.0
1.0
AYW
CA G
G
I
C
Total Power Dissipation
P
D
@ T = 25°C (Note 1)
1.5
12
W
mW/°C
A
Derate above 25°C
CA = Specific Device Code
Operating and Storage Temperature
Range
T , T
−65 to 150
°C
J
stg
A
Y
W
G
= Assembly Location
= Year
= Work Week
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
= Pb−Free Package
(Note: Microdot may be in either location)
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
ORDERING INFORMATION
THERMAL CHARACTERISTICS
†
Device
Package
Shipping
Characteristic
Symbol
Max
Unit
BCP68T1G
SOT−223
(Pb−Free)
1,000/Tape & Reel
1,000/Tape & Reel
4,000/Tape & Reel
Thermal Resistance, Junction−to−Ambient
(Surface Mounted)
R
83.3
°C/W
q
JA
SBCP68T1G*
BCP68T3G
SOT−223
(Pb−Free)
Lead Temperature for Soldering,
0.0625 in from case
Time in Solder Bath
T
260
10
°C
L
Sec
SOT−223
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
1
Publication Order Number:
September, 2013 − Rev. 8
BCP68T1/D
BCP68T1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristics
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
Symbol
Min
Typ
Max
Unit
V
Vdc
Vdc
(BR)CES
(BR)CEO
(BR)EBO
(I = 100 mAdc, I = 0)
25
20
5.0
−
−
−
−
−
−
−
−
C
E
Collector−Emitter Breakdown Voltage
(I = 1.0 mAdc, I = 0)
V
V
C
B
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
Vdc
−
E
C
Collector−Base Cutoff Current
(V = 25 Vdc, I = 0)
I
mAdc
mAdc
CBO
10
10
CB
E
Emitter−Base Cutoff Current
(V = 5.0 Vdc, I = 0)
I
EBO
−
EB
C
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 5.0 mAdc, V = 10 Vdc)
50
85
60
−
−
−
−
375
−
C
CE
(I = 500 mAdc, V = 1.0 Vdc)
C
CE
(I = 1.0 Adc, V = 1.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = 1.0 Adc, I = 100 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−
−
0.5
1.0
C
B
Base−Emitter On Voltage
(I = 1.0 Adc, V = 1.0 Vdc)
V
BE(on)
C
CE
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
f
T
MHz
(I = 10 mAdc, V = 5.0 Vdc)
−
60
−
C
CE
TYPICAL ELECTRICAL CHARACTERISTICS
300
200
300
200
T = 125°C
J
= 25°C
100
70
100
= -55°C
V
= 10 V
CE
T = 25°C
J
f = 30 MHz
50
30
V
CE
= 1.0 V
10
1.0
10
100
1000
10
100
200
1000
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
Figure 2. Current-Gain-Bandwidth Product
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2
BCP68T1G
TYPICAL ELECTRICAL CHARACTERISTICS
1.0
0.8
0.6
0.4
0.2
0
80
T = 25°C
J
T = 25°C
J
V
@ I /I = 10
C B
BE(sat)
70
60
50
40
30
V
BE(on)
@ V = 1.0 V
CE
V
@ I /I = 10
C B
CE(sat)
5.0
1.0
10
100
1000
0
1.0
2.0
3.0
4.0
I , COLLECTOR CURRENT (mA)
C
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. “On” Voltage
Figure 4. Capacitance
25
20
15
10
5.0
-ꢁ0.8
-1.2
-1.6
-ꢁ2.0
-ꢁ2.4
-ꢁ2.8
T = 25°C
J
R
for V
BE
q
VB
0
5.0
10
15
20
1.0
10
100
1000
V , REVERSE VOLTAGE (VOLTS)
R
I , COLLECTOR CURRENT (mA)
C
Figure 5. Capacitance
Figure 6. Base-Emitter Temperature Coefficient
1.0
0.8
0.6
T = 25°C
J
= 1000 mA
I
= 10 mA
= 100 mA
= 50 mA
0.4
0.2
0
C
= 500 mA
0.01
0.1
1.0
I , BASE CURRENT (mA)
10
100
B
Figure 7. Saturation Region
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3
BCP68T1G
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
NOTES:
ꢂꢀ1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
ꢂꢀ2. CONTROLLING DIMENSION: INCH.
b1
MILLIMETERS
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
4
2
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
NOM
1.63
0.06
0.75
3.06
0.29
6.50
3.50
2.30
0.94
−−−
1.75
7.00
−
MAX
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
H
E
E
1.75
0.10
0.89
3.20
0.35
6.70
3.70
2.40
1.05
−−−
2.00
7.30
10°
1
3
b
e1
e
0.069
0.276
−
0.078
0.287
10°
C
q
H
E
q
A
0.08 (0003)
STYLE 1:
A1
L
PIN 1. BASE
2. COLLECTOR
3. EMITTER
L1
4. COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
mm
inches
1.5
0.059
ǒ
Ǔ
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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BCP68T1/D
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