BCP69 [ONSEMI]
PNP Bipolar Junction Transistor;
| 型号： | BCP69 |
| 厂家： | 
ONSEMI |
| 描述： | PNP Bipolar Junction Transistor 放大器 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：351K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
November 2014
BCP69
PNP General-Purpose Amplifier
Description
4
This device is designed for general-purpose medium-
power amplifiers and switches requiring collector cur-
rents to 1.0 A. Sourced from process 77.
3
2
1
SOT-223
1. Base 2,4. Collector 3. Emitter
Ordering Information
Part Number
Marking
Package
Packing Method
BCP69
BCP69
SOT-223 4L
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Value
-20
Unit
V
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
-30
V
-5.0
V
Collector Current - Continuous
Junction Temperature
-1.5
A
TJ
150
°C
°C
TSTG
Storage Temperature Range
-55 to +150
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 2003 Fairchild Semiconductor Corporation
BCP69 Rev. 1.1.0
www.fairchildsemi.com
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
Parameter
Max.
1.0
Unit
W
Total Device Dissipation
Derate Above 25°C
8.0
mW/°C
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
125
Note:
3. Device is mounted on FR-4 PCB 36 mm × 18 mm × 1.5 mm; mounting pad for the collector lead minimum 6 cm2.
Electrical Characteristics(4)
Values are at TA = 25°C unless otherwise noted.
Symbol
BVCEO
BVCBO
BVEBO
Parameter
Conditions
Min.
-20
Typ.
Max.
Unit
V
Collector-Emitter Breakdown Voltage IC = -10 mA, IB = 0
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
IC = -1.0 mA, IE = 0
-30
V
IE = -100 μA, IC = 0
-5.0
V
V
CB = -25 V, IE = 0
-100
-10
nA
ICBO
IEBO
Collector-Base Cut-Off Current
Emitter-Base Cut-Off Current
VCB = -25 V, IE = 0,
TJ = 150°C
μA
VEB = -5.0 V, IC = 0
-100
nA
IC = -5 mA, VCE = -1.0 V
IC = -500 mA, VCE = -1.0 V
IC = -1.0 A, VCE = -1.0 V
50
85
60
hFE
DC Current Gain
375
VCE(sat) Collector-Emitter Saturation Voltage IC = -1.0 A, IB = -100 mA
-0.5
-1.0
V
V
VBE(on)
Base-Emitter On Voltage
IC = -1.0 A, VCE = -1.0 V
VCB = -10 V, IE = 0,
f = 1.0 MHz
Ccb
Collector-Base Capacitance
30
pF
IC = -50 mA, VCE = -10 V,
f = 20 MHz
hfe
Small-Signal Current Gain
2.5
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%
© 2003 Fairchild Semiconductor Corporation
BCP69 Rev. 1.1.0
www.fairchildsemi.com
2
Typical Performance Characteristics
300
1
0.8
0.6
0.4
0.2
0
VCE = 5.0V
β = 1 0
250
200
150
100
50
125 °C
25 °C
25 °C
- 40 °C
- 40 °C
125 °C
0
0.01
0.1
1
2
0.01
0.1
1
3
I C - COLLECTOR CURRENT (A)
IC - COLLECTOR CURRENT (A)
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
Figure 1. Typical Pulsed Current Gain vs.
Collector Current
β = 10
1
1
0.8
0.8
- 40 °C
- 40 °C
25 °C
0.6
25 °C
0.6
125 °C
125 °C
0.4
0.2
VCE = 5.0 V
0.4
1
10
100
1000
1
10
100
1000
I C - COLLECTOR CURRENT (mA)
IC - COLLECTOR CURRENT (mA)
Figure 4. Base Emitter On Voltage vs.
Collector Current
Figure 3. Base-Emitter Saturation Voltage vs.
Collector Current
100
40
30
20
10
0
f = 1.0 MHz
VCB = 20V
10
1
0.1
25
50
75
100
125
°
150
0
10
20
30
T A - AM BIENT TE MPE RATURE ( C)
VCB- COLLECTOR-BASE VOLTAGE (V)
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
Figure 6. Collector-Base Capacitance vs.
Collector-Base Voltage
© 2003 Fairchild Semiconductor Corporation
BCP69 Rev. 1.1.0
www.fairchildsemi.com
3
Typical Performance Characteristics (Continued)
1.5
1.0
0.5
0.0
250
V
= 10V
CE
200
150
100
50
0
1
10
100
1000
0
25
50
75
100
125
150
Ta[oC], AMBIENT TEMPERATURE
I C - COLLECTOR CURRENT (mA)
Figure 8. Power Dissipation vs. Ambient Temperature
Figure 7. Gain Bandwidth Product vs.
Collector Current
© 2003 Fairchild Semiconductor Corporation
BCP69 Rev. 1.1.0
www.fairchildsemi.com
4
6.70
6.20
B
0.10
C B
3.10
2.90
3.25
4
1.90
A
3.70
3.30
6.10
1.90
1
3
0.84
0.60
2.30
2.30
0.95
4.60
0.10
C B
LAND PATTERN RECOMMENDATION
SEE DETAIL A
1.80 MAX
7.30
6.70
0.08
C
C
0.10
0.00
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
R0.15±0.05
R0.15±0.05
10°
5°
GAGE
PLANE
0.35
0.20
E) LANDPATTERN NAME: SOT230P700X180-4BN
F) DRAWING FILENAME: MKT-MA04AREV3
10°
0°
TYP
0.25
10°
5°
0.60 MIN
SEATING
PLANE
1.70
DETAIL A
SCALE: 2:1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
www.onsemi.com
©2020 ICPDF网 联系我们和版权申明