BCW32LT1G_09 [ONSEMI]

General Purpose Transistors; 通用晶体管


型号：	BCW32LT1G_09
厂家：	ONSEMI
描述：	General Purpose Transistors 通用晶体管晶体晶体管
文件：	总6页 (文件大小：189K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BCW32LT1G

General Purpose

Transistors

NPN Silicon

Features

http://onsemi.com

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

COLLECTOR

BASE

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

EMITTER

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

CEO

CBO

Vdc

EBO

5.0

Vdc

Collector Current − Continuous

100

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

SOT−23 (TO−236AB)

CASE 318

THERMAL CHARACTERISTICS

STYLE 6

Characteristic

Symbol

Value

Unit

Total Device Dissipation

FR-5 Board

(1)

MARKING DIAGRAM

225

T = 25°C

Derate above 25°C

1.8

mW/°C

°C/W

D2 M G

Thermal Resistance,

556

Junction−to−Ambient

Total Device Dissipation

300

(2)

Alumina Substrate, T = 25°C

D2 = Device Code

Derate above 25°C

2.4

mW/°C

°C/W

= Date Code*

= Pb−Free Package

Thermal Resistance,

Junction−to−Ambient

417

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

Junction and Storage Temperature

T , T

−55 to +150

°C

stg

1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.

2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.

ORDERING INFORMATION

†

Device

Package

Shipping

BCW32LT1G

SOT−23

3000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2009

Publication Order Number:

August, 2009 − Rev. 2

BCW32LT1/D

BCW32LT1G

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Typ

Max

Unit

Collector−Emitter Breakdown Voltage

−

Vdc

(BR)CEO

(BR)CBO

(BR)EBO

(I = 2.0 mAdc, V = 0)

Collector−Base Breakdown Voltage

(I = 10 mAdc, I = 0)

Emitter−Base Breakdown Voltage

(I = 10 mAdc, I = 0)

5.0

Collector Cutoff Current

(V = 32 Vdc, I = 0)

CBO

−

100

nAdc

mAdc

(V = 32 Vdc, I = 0, T = 100°C)

ON CHARACTERISTICS

DC Current Gain

−

(I = 2.0 mAdc, V = 5.0 Vdc)

200

−

450

0.25

0.70

Collector−Emitter Saturation Voltage

(I = 10 mAdc, I = 0.5 mAdc)

Vdc

CE(sat)

Base−Emitter On Voltage

(I = 2.0 mAdc, V = 5.0 Vdc)

BE(on)

0.55

SMALL−SIGNAL CHARACTERISTICS

Output Capacitance

−

4.0

obo

(I = 0, V = 10 Vdc, f = 1.0 MHz)

Noise Figure

(I = 0.2 mAdc, V = 5.0 Vdc, R = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)

TYPICAL NOISE CHARACTERISTICS

(V_CE= 5.0 Vdc, T_A= 25°C)

100

I = 1.0 mA

BANDWIDTH = 1.0 Hz

R ≈ ∞

BANDWIDTH = 1.0 Hz

R = 0

I = 1.0 mA

300 mA

100 mA

5.0

7.0

5.0

100 mA

2.0

1.0

10 mA

0.5

0.2

0.1

30 mA

3.0

2.0

10 mA

10 20

50 100 200

500 1ꢀk

2ꢀk

5ꢀk 10ꢀk

50 100 200

500 1ꢀk

2ꢀk

5ꢀk 10ꢀk

f, FREQUENCY (Hz)

Figure 1. Noise Voltage

Figure 2. Noise Current

http://onsemi.com

BCW32LT1G

NOISE FIGURE CONTOURS

(V_CE= 5.0 Vdc, T_A= 25°C)

500ꢀk

1ꢀM

500ꢀk

BANDWIDTH = 1.0 Hz

200ꢀk

100ꢀk

50ꢀk

200ꢀk

100ꢀk

50ꢀk

20ꢀk

10ꢀk

5ꢀk

2.0 dB

1.0 dB

5ꢀk

2ꢀk

1ꢀk

3.0 dB

4.0 dB

2.0 dB

2ꢀk

1ꢀk

3.0 dB

5.0 dB

8.0 dB

6.0 dB

10 dB

500

200

100

200

100

20 30

50 70 100

200 300

500 700 1ꢀk

20 30

50 70 100

200 300

500 700 1ꢀk

I , COLLECTOR CURRENT (mA)

Figure 3. Narrow Band, 100 Hz

Figure 4. Narrow Band, 1.0 kHz

500ꢀk

10 Hz to 15.7 kHz

200ꢀk

100ꢀk

50ꢀk

Noise Figure is defined as:

20ꢀk

n S

1ń2

) 4KTR ) I

10ꢀk

5ꢀk

₁₀ǒ

NF + 20 log

4KTR

1.0 dB

= Noise Voltage of the Transistor referred to the input. (Figure 3)

2ꢀk

1ꢀk

2.0 dB

= Noise Current of the Transistor referred to the input.

3.0 dB

(Figure 4)

500

−23

= Boltzman’s Constant (1.38 x 10

j/°K)

5.0 dB

8.0 dB

= Temperature of the Source Resistance (°K)

= Source Resistance (W)

200

100

20 30

50 70 100

200 300

500 700 1ꢀk

I , COLLECTOR CURRENT (mA)

Figure 5. Wideband

http://onsemi.com

BCW32LT1G

TYPICAL STATIC CHARACTERISTICS

400

200

T = 125°C

25°C

-ꢁ55°C

100

= 1.0 V

= 10 V

0.004 0.006 0.01

0.02 0.03 0.05 0.07 0.1

0.2 0.3

0.5 0.7 1.0

3.0

2.0

5.0 7.0 10

50 70 100

I , COLLECTOR CURRENT (mA)

Figure 6. DC Current Gain

1.0

100

T = 25°C

PULSE WIDTH = 300 ms

DUTY CYCLE ≤ 2.0%

T = 25°C

I = 500 mA

0.8

0.6

0.4

0.2

400 mA

300 mA

200 mA

I = 1.0 mA

10 mA

50 mA

100 mA

0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0

5.0 10 20

5.0

I , BASE CURRENT (mA)

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 7. Collector Saturation Region

Figure 8. Collector Characteristics

1.4

1.2

1.6

0.8

*APPLIES for I /I ≤ h /2

T = 25°C

25°C to 125°C

-55°C to 25°C

1.0

0.8

0.6

0.4

*q for V

CE(sat)

@ I /I = 10

C B

BE(sat)

-ꢁ0.8

-ꢁ1.6

-ꢁ2.4

BE(on)

@ V = 1.0 V

25°C to 125°C

-55°C to 25°C

0.2

for V

@ I /I = 10

C B

CE(sat)

0.1 0.2

0.5 1.0

2.0

5.0

50 100

0.1

0.2

0.5

1.0 2.0

5.0 10 20

50 100

I , COLLECTOR CURRENT (mA)

Figure 9. “On” Voltages

Figure 10. Temperature Coefficients

http://onsemi.com

BCW32LT1G

TYPICAL DYNAMIC CHARACTERISTICS

7.0

5.0

T = 25°C

f = 1.0 MHz

3.0

2.0

1.0

0.05 0.1

0.2

0.5

1.0

2.0

5.0

V , REVERSE VOLTAGE (VOLTS)

Figure 11. Capacitance

http://onsemi.com

BCW32LT1G

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AN

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

SEE VIEW C

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES

LEAD FINISH THICKNESS. MINIMUM LEAD

THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. 318−01 THRU −07 AND −09 OBSOLETE,

NEW STANDARD 318−08.

MILLIMETERS

INCHES

DIM

MIN

0.89

0.01

0.37

0.09

2.80

1.20

1.78

0.10

0.35

2.10

NOM

1.00

0.06

0.44

0.13

2.90

1.30

1.90

0.20

0.54

2.40

MAX

MIN

NOM

0.040

0.002

0.018

0.005

0.114

0.051

0.075

0.008

0.021

0.094

MAX

0.044

0.004

0.020

0.007

0.120

0.055

0.081

0.012

0.029

0.104

0.25

1.11

0.10

0.50

0.18

3.04

1.40

2.04

0.30

0.69

2.64

0.035

0.001

0.015

0.003

0.110

0.047

0.070

0.004

0.014

0.083

VIEW C

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

SOLDERING FOOTPRINT*

0.95

0.037

0.95

0.037

2.0

0.079

0.9

0.035

0.8

0.031

inches

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5773−3850

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

BCW32LT1/D

http://onsemi.com

BCW32LT1G_09 [ONSEMI]

相关型号：

BCW32LX

BCW32R

BCW32R-TAPE-13

BCW32R-TAPE-7

BCW32RL

BCW32RLK

BCW32RLO

BCW32RLT

BCW32RLX

BCW32RTA

BCW32RTC

BCW32T/R