BCW66GLT1 [ONSEMI]
NPN 双极晶体管;
| 型号： | BCW66GLT1 |
| 厂家： | 
ONSEMI |
| 描述： | NPN 双极晶体管 小信号双极晶体管 |
| 文件： | 总3页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCW66GLT1G
General Purpose Transistor
NPN Silicon
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
http://onsemi.com
Compliant
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
2
Rating
Symbol
Value
45
Unit
Vdc
EMITTER
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
V
CEO
V
CBO
75
Vdc
3
V
EBO
5.0
Vdc
SOT−23
CASE 318
STYLE 6
Collector Current − Continuous
I
800
mAdc
1
C
2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device
reliability.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
EG MG
Characteristic
Symbol
Max
Unit
G
Total Device Dissipation FR−5 Board
P
D
225
mW
(Note 1), T = 25°C
Derate above 25°C
A
1.8
mW/°C
°C/W
EG
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
Thermal Resistance,
Junction−to−Ambient
R
q
JA
556
(Note: Microdot may be in either location)
Total Device Dissipation Alumina
P
D
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Substrate, (Note 2) T = 25°C
300
2.4
mW
mW/°C
A
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
ORDERING INFORMATION
R
417
°C/W
°C
q
JA
†
Device
Package
Shipping
Junction and Storage Temperature
T , T
J
−55 to +150
stg
BCW66GLT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in 99.5% alumina.
BCW66GLT3G
SOT−23
10000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2009 − Rev. 3
BCW66GLT1/D
BCW66GLT1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (I = 10 mAdc, I = 0)
V
(BR)CEO
45
75
−
−
−
−
−
−
Vdc
Vdc
Vdc
C
B
Collector−Emitter Breakdown Voltage (I = 10 mAdc, V = 0)
V
C
EB
(BR)CES
(BR)EBO
Emitter−Base Breakdown Voltage (I = 10 mAdc, I = 0)
V
5.0
E
C
Collector Cutoff Current
(V = 45 Vdc, I = 0)
I
CES
−
−
−
−
20
20
nAdc
mAdc
CE
E
(V = 45 Vdc, I = 0, T = 150°C)
CE
E
A
Emitter Cutoff Current (V = 4.0 Vdc, I = 0)
I
−
−
20
nAdc
EB
C
EBO
ON CHARACTERISTICS
DC Current Gain
h
FE
−
(I = 100 mAdc, V = 10 Vdc)
50
110
160
60
−
−
−
−
−
−
400
−
C
CE
(I = 10 mAdc, V = 1.0 Vdc)
C
CE
(I = 100 mAdc, V = 1.0 Vdc)
C
CE
(I = 500 mAdc, V = 2.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = 500 mAdc, I = 50 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−
−
0.7
0.3
C
B
(I = 100 mAdc, I = 10 mAdc)
C
B
Base−Emitter Saturation Voltage
(I = 500 mAdc, I = 50 mAdc)
V
BE(sat)
−
−
2.0
C
B
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
f
100
−
−
−
−
−
−
MHz
pF
T
(I = 20 mAdc, V = 10 Vdc, f = 100 MHz)
C
CE
Output Capacitance
C
obo
12
80
10
(V = 10 Vdc, I = 0, f = 1.0 MHz)
CB
E
Input Capacitance
C
ibo
−
pF
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
EB
C
Noise Figure
NF
−
dB
(V = 5.0 Vdc, I = 0.2 mAdc, R = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
CE
C
S
SWITCHING CHARACTERISTICS
Turn−On Time (I = I = 15 mAdc)
t
t
−
−
−
−
100
400
ns
ns
B1
B2
on
Turn−Off Time (I = 150 mAdc, R = 150 W)
C
L
off
10
1.0
1 ms
10 ms
0.1
100 ms
1 s
0.01
Thermal Limit
Single Pulse Test at T = 25°C
A
0.001
0.1
1.0
10
100
V
CE
(V )
dc
Figure 1. Safe Operating Area
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2
BCW66GLT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
D
SEE VIEW C
3
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
H
E
E
MILLIMETERS
INCHES
DIM
A
A1
b
c
D
E
e
L
L1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
NOM
1.00
0.06
0.44
0.13
2.90
1.30
1.90
0.20
0.54
2.40
MAX
MIN
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
c
1.11
0.10
0.50
0.18
3.04
1.40
2.04
0.30
0.69
2.64
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
1
2
b
0.25
e
q
A
H
E
L
A1
L1
VIEW C
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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BCW66GLT1/D
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