BD13610STU [ONSEMI]
1.5 A, 45 V PNP Bipolar Junction Medium Power Transistor;
| 型号： | BD13610STU |
| 厂家： | 
ONSEMI |
| 描述： | 1.5 A, 45 V PNP Bipolar Junction Medium Power Transistor |
| 文件： | 总5页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Epitaxial Silicon
Transistor
BD136 Series
BD136 / BD138 / BD140
Applications
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• Complement to BD135, BD137 and BD139 Respectively
• These are Pb−Free Devices
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Symbol
Max
Unit
Collector−Base Voltage
V
V
V
V
CBO
BD136
BD138
BD140
−45
−60
−80
TO−126
CASE 340AS
1
2
3
Collector−Emitter Voltage
V
CEO
1
Emitter
2 Collector
3 Base
BD136
BD138
BD140
−45
−60
−80
Emitter−Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
−5
V
A
A
A
EBO
I
I
I
−1.5
−3.0
−0.5
C
MARKING DIAGRAM
CP
B
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
YWW
BD1XX
THERMAL CHARACTERISTICS
Y
WW
= Year
= Work Week
Rating
Collector Dissipation
Symbol
Max
12.5
Unit
W
P
P
C
BD1XX = Specific Device Code
XX = 36, 38, 40
Collector Dissipation (T = 25°C)
1.25
W
A
C
Junction Temperature
T
150
°C
°C
J
Storage Temperature Range
T
STG
−55~150
ORDERING INFORMATION
Package
Device
BD13610STU
BD13610S
Shipping
60 Units/ Tube
500 Units/ Bulk Box
60 Units/ Tube
BD13616STU
BD13616S
500 Units/ Bulk Box
60 Units/ Tube
TO−126
(Pb−Free)
BD13810STU
BD13816STU
60 Units/ Tube
60 Units/ Tube
BD14010STU
BD14016STU
BD14016S
60 Units/ Tube
500 Units/ Bulk Box
© Semiconductor Components Industries, LLC, 2000
1
Publication Order Number:
November, 2019 − Rev. 1
BD136/D
BD136 Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Condition
= −30 mA, I = 0
Min.
Typ.
Max.
Units
V (sus) Collector−Emitter Sustaining Voltage (Note 1)
CEO
I
C
V
B
BD136
BD138
BD140
−45
−60
−80
I
Collector Cut−off Current
Emitter Cut−off Current
DC Current Gain (Note 1)
V
CB
V
EB
V
CE
V
CE
= −30 V, I = 0
−0.1
−10
mA
mA
CBO
E
I
= −5 V, I = 0
C
EBO
h
h
= −2 V, I = −5 mA
25
FE1
C
= −2 V, I = −150 mA
FE2
C
BD13610/BD13810/BD14010
BD13616/BD13816/BD14016
63
100
160
250
h
FE3
V
CE
= −2 V, I = −500 mA
25
C
V
(sat)
Collector−Emitter Saturation Voltage
I
= 500 mA, I = 50 mA
−0.5
−1
V
V
CE
C
B
(Note 1)
V
(on)
Base−Emitter ON Voltage (Note 1)
V
= −2 V, I = −0.5 A
CE C
BE
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: PW = 350 ms, duty Cycle = 2% Pulsed
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2
BD136 Series
TYPICAL PERFORMANCE CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
−500
V
= −2 V
CE
−450
−400
−350
−300
I
= 20 I
B
C
−250
−200
−150
−100
I
C
= 10 I
B
−50
−0
−1E−3
−1
I , COLLECTOR CURRENT [A]
−10
−0.1
−0.01
−10
−1000
−100
I [mA], COLLECTOR CURRENT
C
C
Figure 2. Collector−Emitter Saturation Volatage
Figure 1. DC Current Gain
−1.1
−1.0
−0.9
−10
V
C
(sat)
I
I
MAX. (Pulsed)
BE
10 ms
C
I
= 10 I
B
100 ms
1 ms
−0.8
−1
V
BE
V
CE
(on)
MAX. (Continues)
C
−0.7
−0.6
= −5 V
DC
−0.5
−0.4
−0.3
−0.2
−0.1
−0.01
−0.1
−1E−3
−10
−1
−0.01
−0.1
−1
−10
−100
I , COLLECTOR CURRENT [A]
C
V , COLLECTOR−EMITTER VOLTAGE [V]
CE
Figure 4. Safe Operating Area
Figure 3. Base−Emitter Voltage
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
150 175
0
25
50
75
100 125
T , CASE TEMPERATURE [°C]
C
Figure 5. Power Derating
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3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−126−3LD
CASE 340AS
ISSUE O
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13817G
TO−126−3LD
PAGE 1 OF 1
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