BD138 [ONSEMI]
POWER TRANSISTORS PNP SILICON; 功率晶体管PNP硅
| 型号： | BD138 |
| 厂家： | 
ONSEMI |
| 描述： | POWER TRANSISTORS PNP SILICON |
| 文件： | 总4页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by BD136/D
SEMICONDUCTOR TECHNICAL DATA
. . . designed for use as audio amplifiers and drivers utilizing complementary or quasi
complementary circuits.
•
•
DC Current Gain — h = 40 (Min) @ I = 0.15 Adc
FE C
BD 136, 138, 140 are complementary with BD 135, 137, 139
1.5 AMPERE
POWER TRANSISTORS
PNP SILICON
45, 60, 80 VOLTS
10 WATTS
CASE 77–08
TO–225AA TYPE
MAXIMUM RATINGS
Rating
Symbol
Type
Value
Unit
Collector–Emitter Voltage
V
V
V
BD 136
BD 138
BD 140
45
60
80
Vdc
CEO
CBO
EBO
Collector–Base Voltage
BD 136
BD 138
BD 140
45
60
100
Vdc
Emitter–Base Voltage
Collector Current
Base Current
5
Vdc
Adc
Adc
I
C
1.5
0.5
I
B
Total Device Dissipation@ T = 25 C
A
Derate above 25 C
P
D
1.25
10
Watts
mW/ C
Total Device Dissipation @ T = 25 C
C
Derate above 25 C
P
D
12.5
100
Watt
mW/ C
Operating and Storage Junction
Temperarture Range
T , T
J stg
–55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
10
Unit
C/W
C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
θ
θ
JC
JA
100
REV 7
Motorola, Inc. 1995
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Type
Min
Max
Unit
Collector–Emitter Sustaining Voltage*
(I = 0.03 Adc, I = 0)
BV
Vdc
CEO
BD 136
BD 138
BD 140
45
60
80
—
—
—
C
B
Collector Cutoff Current
I
µAdc
CBO
(V
CB
(V
CB
= 30 Vdc, I = 0)
0.1
10
—
—
E
= 30 Vdc, I = 0, T = 125 C)
E
C
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
I
—
10
µAdc
EBO
BE
C
DC Current Gain
—
(I = 0.005 A, V
C
= 2 V)
ALL
h
FE
*
25
40
—
250
CE
(I = 0.15 A, V
= 2 V)
= 2 V)
ALL
BD140–10
C
CE
63
25
160
—
(I = 0.5 A, V
C CE
Collector–Emitter Saturation Voltage*
(I = 0.5 Adc, I = 0.05 Adc)
V
*
—
0.5
Vdc
Vdc
CE(sat)
C
B
Base–Emitter On Voltage*
(I = 0.5 Adc, V = 2.0 Vdc)
V
*
—
1
BE(on)
C
CE
* Pulse Test: Pulse Width
300 µs, Duty Cycle
2.0%.
10
5.0
2.0
1.0
0.5
0.1 ms
5 ms
0.5 ms
T
= 125°C
J
dc
0.2
0.1
0.05
BD136
BD138
BD140
0.02
0.01
1
2
5
10
20
50
80
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 1. Active–Region Safe Operating Area
2
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
–B–
NOTES:
F
C
U
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Q
M
INCHES
MILLIMETERS
–A–
DIM
A
B
C
D
F
MIN
MAX
0.435
0.305
0.105
0.026
0.130
MIN
10.80
7.50
2.42
0.51
2.93
MAX
11.04
7.74
2.66
0.66
3.30
1
2
3
0.425
0.295
0.095
0.020
0.115
H
K
G
H
J
K
M
Q
R
S
0.094 BSC
2.39 BSC
0.050
0.015
0.575
5
0.095
0.025
0.655
1.27
0.39
14.61
5
2.41
0.63
16.63
TYP
TYP
J
V
G
0.148
0.045
0.025
0.145
0.040
0.158
0.055
0.035
0.155
–––
3.76
1.15
0.64
3.69
1.02
4.01
1.39
0.88
3.93
–––
R
M
M
M
0.25 (0.010)
A
B
S
U
V
D 2 PL
STYLE 1:
PIN 1. EMITTER
M
M
M
0.25 (0.010)
A
B
2. COLLECTOR
3. BASE
CASE 77–08
TO–225AA TYPE
ISSUE V
3
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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BD136/D
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