BD17910STU [ONSEMI]
3.0 A, 80 V Medium Power NPN Bipolar Power Transistor;型号: | BD17910STU |
厂家: | ONSEMI |
描述: | 3.0 A, 80 V Medium Power NPN Bipolar Power Transistor 晶体管 功率双极晶体管 |
文件: | 总4页 (文件大小:110K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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by BD179/D
SEMICONDUCTOR TECHNICAL DATA
3.0 AMPERES
POWER TRANSISTORS
NPN SILICON
. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
•
•
DC Current Gain — h = 40 (Min) @ I = 0.15 Adc
FE C
BD179 is complementary with BD180
80 VOLTS
30 WATTS
MAXIMUM RATINGS
Rating
Symbol
Value
80
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current
V
CEO
V
CBO
V
EBO
80
5.0
3.0
1.0
I
C
Base Current
I
B
Total Device Dissipation @ T = 25 C
C
Derate above 25 C
P
D
30
240
Watts
mw/ C
Operating and Storage Junction
Temperature Range
T , T
–65 to +150
C
J
stg
THERMAL CHARACTERISTICS
Characteristic
CASE 77–08
TO–225AA TYPE
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θ
4.16
C/W
JC
ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Sustaining Voltage*
V
80
—
Vdc
(BR)CEO
(I = 0.1 Adc, I = 0)
C
B
Collector Cutoff Current
(V = 80 Vdc, I = 0)
I
—
—
0.1
1.0
mAdc
mAdc
CBO
CB
Emitter Cutoff Current
(V = 5.0 Vdc, I = 0)
E
I
EBO
BE
C
DC Current Gain
h
FE
(I = 0.15 A, V
C
= 2.0 V)
BD179–10
ALL
63
15
160
—
CE
= 2.0 V)
CE
(I = 1.0 A, V
C
Collector–Emitter Saturation Voltage*
(I = 1.0 Adc, I = 0.1 Adc)
V
—
0.8
1.3
—
Vdc
Vdc
MHz
CE(sat)
C
B
Base–Emitter On Voltage*
(I = 1.0 Adc, V = 2.0 Vdc)
V
BE(on)
—
C
CE
Current–Gain – Bandwidth Product
f
T
3.0
(I = 250 mAdc, V
CE
= 10 Vdc, f = 1.0 MHz)
300 As, Duty Cycle
C
* Pulse Test: Pulse Width
2.0%.
REV 7
Motorola, Inc. 1995
10
100
1.0 ms
5.0 ms
µs
7.0
5.0
3.0
2.0
The Safe Operating Area Curves indicate I – V
limits
CE
C
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the ap-
plicable Safe Area to avoid causing a catastrophic failure. To
dc
1.0
T
= 150°C
J
insure operation below the maximum T , power–temperature
0.7
0.5
J
SECONDARY BREAKDOWN LIMITATION
THERMAL LIMITATION
(BASE–EMITTER DISSIPATION IS
SIGNIFICANT ABOVE I = 2.0 AMP)
PULSE DUTY CYCLE < 10%
derating must be observed for both steady state and pulse
power conditions.
0.3
0.2
C
0.1
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
V
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
CE
Figure 1. Active Region Safe Operating Area
1.0
0.8
0.6
0.4
I
= 0.1 A
0.25 A
0.5 A
1.0 A
C
T
= 25°C
J
0.2
0
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
100
200
I
, BASE CURRENT (mA)
B
Figure 2. Collector Saturation Region
1000
700
500
1.5
V
= 2.0 V
CE
T
= 25°C
J
1.2
0.9
0.6
300
200
T
= + 150°C
J
100
70
50
V
@ I /I = 10
C B
BE(sat)
T
= + 25
°
C
C
J
J
V
@ V = 2.0 V
CE
BE
30
20
T
= + 55
°
0.3
0
V
@ I /I = 10
C B
CE(sat)
10
2.0 3.0 5.0
10
20 30 50
100 200 300 500 1000 2000
2.0 3.0 5.0
10
20 30 50
100 200 300 500 1000 2000
I
, COLLECTOR CURRENT (mA)
I , COLLECTOR CURRENT (mA)
C
C
Figure 3. Current Gain
Figure 4. “On” Voltages
1.0
0.7
0.5
D = 0.5
D = 0.2
D = 0.1
0.3
0.2
SINGLE PULSE
θ
θ
θ
(t) = r(t) θ
P
JC
JC
JC
JC
(pk)
D = 0.05
D = 0.01
0.1
0.07
= 4.16°C/W MAX
= 3.5°C/W TYP
0.05
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
0.03
0.02
t
2
1
T
– T = P
θ
(t)
DUTY CYCLE, D = t /t
1 2
J(pk)
C
(pk) JC
0.01
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
20
30
50
100
200 300
500
1000
t, TIME or PULSE WIDTH (ms)
Figure 5. Thermal Response
2
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
–B–
NOTES:
F
C
U
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Q
M
INCHES
MILLIMETERS
–A–
DIM
A
B
C
D
F
MIN
MAX
0.435
0.305
0.105
0.026
0.130
MIN
10.80
7.50
2.42
0.51
2.93
MAX
11.04
7.74
2.66
0.66
3.30
1
2
3
0.425
0.295
0.095
0.020
0.115
H
K
G
H
J
K
M
Q
R
S
0.094 BSC
2.39 BSC
0.050
0.015
0.575
5
0.095
0.025
0.655
1.27
0.39
14.61
5
2.41
0.63
16.63
TYP
TYP
J
V
G
0.148
0.045
0.025
0.145
0.040
0.158
0.055
0.035
0.155
–––
3.76
1.15
0.64
3.69
1.02
4.01
1.39
0.88
3.93
–––
R
M
M
M
0.25 (0.010)
A
B
S
U
V
D 2 PL
STYLE 1:
PIN 1. EMITTER
M
M
M
0.25 (0.010)
A
B
2. COLLECTOR
3. BASE
CASE 77–08
TO–225AA TYPE
ISSUE V
3
Motorola Bipolar Power Transistor Device Data
Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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BD179/D
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