BD435STU [ONSEMI]
Medium Power NPN Bipolar Power Transistor;
| 型号： | BD435STU |
| 厂家： | 
ONSEMI |
| 描述： | Medium Power NPN Bipolar Power Transistor 局域网 开关 晶体管 |
| 文件： | 总4页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BD435, BD437, BD439,
BD441
Plastic Medium Power
Silicon NPN Transistor
This series of plastic, medium−power silicon NPN transistors can be
used for amplifier and switching applications. Complementary types
are BD438 and BD442.
http://onsemi.com
4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
TO−225AA
CASE 77
STYLE 1
Collector−Emitter Voltage
BD435
BD437
BD439
BD441
V
CEO
V
CBO
V
EBO
32
45
60
80
Vdc
3
2
1
Collector−Base Voltage
BD435
BD437
BD439
BD441
32
45
60
80
Vdc
MARKING DIAGRAM
Emitter−Base Voltage
Collector Current
Base Current
5.0
4.0
1.0
Vdc
Adc
Adc
YWW
BD4xxG
I
C
I
B
BD4xx = Device Code
xx = 35, 37, 37T, 39, 41
Total Device Dissipation @ T = 25°C
P
36
288
W
W/°C
C
D
Derate above 25°C
Y
= Year
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
WW
G
= Work Week
= Pb−Free Package
J
stg
THERMAL CHARACTERISTICS
Characteristic
ORDERING INFORMATION
Symbol
Max
Unit
Device
Package
Shipping
Thermal Resistance, Junction−to−Case
q
3.5
°C/W
JC
BD435
TO−225AA
500 Units/Box
500 Units/Box
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
BD435G
TO−225AA
(Pb−Free)
BD437
TO−225AA
500 Units/Box
500 Units/Box
BD437G
TO−225AA
(Pb−Free)
BD437T
TO−225AA
50 Units/Rail
50 Units/Rail
BD437TG
TO−225AA
(Pb−Free)
BD439
TO−225AA
500 Units/Box
500 Units/Box
BD439G
TO−225AA
(Pb−Free)
BD441
TO−225AA
500 Units/Box
500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
BD441G
TO−225AA
(Pb−Free)
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
October, 2005− Rev. 14
BD437/D
BD435, BD437, BD439, BD441
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Collector−Emitter Breakdown Voltage
(I = 100 mA, I = 0)
BD435
BD437
BD439
BD441
V
32
45
60
80
−
−
−
−
−
−
−
−
Vdc
(BR)CEO
C
B
Collector−Base Breakdown Voltage
(I = 100 mA, I = 0)
BD435
BD437
BD439
BD441
V
V
32
45
60
80
−
−
−
−
−
−
−
Vdc
(BR)CBO
C
B
Emitter−Base Breakdown Voltage
(I = 100 mA, I = 0)
5.0
−
−
Vdc
(BR)EBO
E
C
Collector Cutoff Current
(V = 32 V, I = 0)
I
mAdc
CBO
−
−
−
−
−
−
−
−
0.1
0.1
0.1
0.1
BD435
BD437
BD439
BD441
CB
E
(V = 45 V, I = 0)
CB
E
(V = 60 V, I = 0)
CB
E
(V = 80 V, I = 0)
CB
E
Emitter Cutoff Current
(V = 5.0 V)
EB
I
−
−
1.0
mAdc
−
EBO
DC Current Gain
BD435
BD437
BD439
BD441
h
40
30
20
15
−
−
−
−
−
−
−
−
FE
(I = 10 mA, V = 5.0 V)
C
CE
DC Current Gain
(I = 500 mA, V = 1.0 V)
C
BD435
BD437
BD439, BD441
h
h
85
85
40
−
−
−
475
375
475
−
−
FE
CE
DC Current Gain
BD435
BD437
BD439
BD441
50
40
25
15
−
−
−
−
−
−
−
−
FE
(I = 2.0 A, V = 1.0 V)
C
CE
Collector Saturation Voltage
(I = 2.0 A, I = 0.2 V)
V
Vdc
CE(sat)
−
−
−
−
0.5
0.8
BD435
BD437, BD439, BD441
C
B
(I = 3.0 A, I = 0.3 A)
C
B
Base−Emitter On Voltage
(I = 2.0 A, V = 1.0 V)
V
−
−
−
1.1
−
Vdc
BE(on)
C
CE
Current−Gain − Bandwidth Product
(V = 1.0 V, I = 250 mA, f = 1.0 MHz)
f
3.0
MHz
T
CE
C
http://onsemi.com
2
BD435, BD437, BD439, BD441
2.0
1.6
I
= 10 A
100 mA
1.0 A
3.0 A
C
1.2
0.8
0.4
0
T = 25°C
J
0.05 0.070.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200 300 500
I , BASE CURRENT (mA)
B
Figure 1. Collector Saturation Region
200
180
160
140
120
100
80
BD433, 435, 437
BD439, 441
60
40
20
0
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1
2
3
5
I , COLLECTOR CURRENT (AMP)
C
Figure 2. Current Gain
2.0
1.6
10
T = 25°C
J
5 ms
4.0
T = 150°C
J
dc
1.2
1.0
0.5
SECONDARY BREAKDOWN
THERMAL LIMIT T = 25°C
C
BONDING WIRE LIMIT
0.8
0.6
V
@ I /I = 10
BE(sat)
C
B
V
@ V = 2.0 V
CE
BE
CURVES APPLY BELOW RATED V
CEO
BD437
BD439
BD441
V
@ I /I = 10
C B
CE(sat)
0
0.1
0.0050.01 0.02 0.030.05 0.1 0.20.3 0.5 1.0 2.0 3.0 4.0
1.0
2.0
CE
5.0
10
20
50
100
I , COLLECTOR CURRENT (AMP)
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
C
Figure 3. “On” Voltage
Figure 4. Active Region Safe Operating Area
http://onsemi.com
3
BD435, BD437, BD439, BD441
PACKAGE DIMENSIONS
TO−225AA
CASE 77−09
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
−B−
F
C
U
Q
M
−A−
INCHES
DIM MIN MAX
MILLIMETERS
1
2 3
MIN
10.80
7.50
2.42
0.51
2.93
MAX
11.04
7.74
2.66
0.66
3.30
A
B
C
D
F
0.425
0.295
0.095
0.020
0.115
0.435
0.305
0.105
0.026
0.130
H
K
G
H
J
0.094 BSC
2.39 BSC
0.050
0.015
0.575
5
0.095
0.025
0.655
1.27
0.39
14.61
5
2.41
0.63
J
V
K
M
Q
R
S
U
V
16.63
TYP
TYP
_
_
G
R
0.148
0.045
0.025
0.145
0.040
0.158
0.065
0.035
0.155
−−−
3.76
1.15
0.64
3.69
1.02
4.01
1.65
0.88
3.93
−−−
M
M
M
B
0.25 (0.010)
A
S
D 2 PL
M
M
M
B
0.25 (0.010)
A
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
local Sales Representative.
BD437/D
相关型号：
BD435STU_NL
Power Bipolar Transistor, 4A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, LEAD FREE PACKAGE-3
FAIRCHILD
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