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BD675AS [ONSEMI]

Medium Power NPN Darlington Bipolar Power Transistor;
BD675AS
型号： BD675AS
厂家： ONSEMI    ONSEMI
描述：

Medium Power NPN Darlington Bipolar Power Transistor

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BD6xxx  
Complementary power Darlington transistors  
.
Features  
■ Good h linearity  
FE  
■ High f frequency  
T
■ Monolithic Darlington configuration with  
integrated antiparallel collector-emitter diode  
1
Applications  
2
3
■ Linear and switching industrial equipment  
SOT-32  
Description  
The devices are manufactured in planar base  
island technology with monolithic Darlington  
configuration.  
Figure 1.  
Internal schematic diagram  
R1 typ.= 15 KΩ  
R2 typ.= 100 Ω  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
BD677  
BD677A  
BD678  
BD678A  
BD679  
BD679A  
BD680  
BD680A  
BD681  
BD682  
BD677  
BD677A  
BD678  
BD678A  
BD679  
BD679A  
BD680  
BD680A  
BD681  
BD682  
SOT-32  
Tube  
January 2008  
Rev 5  
1/12  
www.st.com  
12  
Contents  
BD6xxx  
Contents  
1
2
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
2.1  
2.2  
Typical characteristic (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
3
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
2/12  
BD6xxx  
Absolute maximum ratings  
1
Absolute maximum ratings  
Table 2.  
Symbol  
Absolute maximum ratings  
Value  
BD677  
BD679  
BD681  
NPN  
Parameter  
BD677A  
BD679A  
Unit  
BD678  
BD680  
PNP  
BD682  
BD678A  
BD680A  
VCBO  
VCEO  
VEBO  
IC  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (IB = 0)  
Emitte-base voltage (IC = 0)  
Collector current  
60  
80  
100  
V
5
V
A
4
ICM  
Collector peak current  
6
0.1  
A
IB  
Base current  
A
PTOT  
Tstg  
TJ  
Total dissipation at Tcase = 25°C  
Storage temperature  
40  
W
°C  
°C  
-65 to 150  
150  
Max. operating junction temperature  
Note:  
For PNP types voltage and current values are negative  
3/12  
Electrical characteristics  
BD6xxx  
2
Electrical characteristics  
(T  
= 25°C; unless otherwise specified)  
case  
Table 3.  
Symbol  
Electrical characteristics  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
Collector cut-off current  
(IB = 0)  
ICEO  
ICBO  
IEBO  
VCE = half rated VCEO  
0.5  
0.2  
mA  
mA  
mA  
VCE = rated VCBO  
VCE = rated VCBO  
Tc = 100 °C  
Collector cut-off current  
(IE = 0)  
2
2
Emitter cut-off current  
(IC = 0)  
VEB = 5 V  
for BD677, BD677A,  
BD678, BD678A  
60  
IC = 50 mA  
Collector-emitter  
for BD679, BD679A,  
BD680, BD680A  
(1)  
V
VCEO(sus)  
80  
sustaining voltage (IB = 0)  
IC = 50 mA  
for BD681, BD682  
IC = 50 mA  
100  
for BD677, BD678,  
BD679, BD680, BD681,  
BD682  
2.5  
2.8  
Collector-emittersaturation  
voltage  
IC = 1.5 A  
IB = 30 mA  
(1)  
V
VCE(sat)  
for BD677A, BD678A,  
BD679A, BD680A  
IC = 2 A  
IB = 40 mA  
for BD677, BD678,  
BD679, BD680, BD681,  
BD682  
IC = 1.5 A ___ VCE = 3 V  
(1)  
Base-emitter voltage  
2.5  
V
VBE  
for BD677A, BD678A,  
BD679A, BD680A  
IC = 2 A  
VCE = 3 V  
4/12  
BD6xxx  
Electrical characteristics  
Min. Typ. Max. Unit  
Table 3.  
Symbol  
Electrical characteristics (continued)  
Parameter Test conditions  
for BD677, BD678,  
BD679, BD680, BD681,  
BD682  
IC = 1.5 A_ _ VCE = 3 V  
(1)  
DC current gain  
750  
hFE  
for BD677A, BD678A,  
BD679A, BD680A  
IC = 2 A_  
_
VCE = 3 V  
1. Pulsed duration = 300 ms, duty cycle ≥1.5%.  
Note:  
For PNP types voltage e current values are negative.  
5/12  
Electrical characteristics  
BD6xxx  
2.1  
Typical characteristic (curves)  
Figure 2.  
Figure 4.  
Figure 6.  
DC current gain (NPN)  
Figure 3.  
DC current gain (PNP)  
DC current gain (NPN)  
Figure 5.  
DC current gain (PNP)  
Collector-emitter saturation Figure 7.  
voltage (NPN)  
Collector-emitter saturation  
voltage (PNP)  
6/12  
BD6xxx  
Electrical characteristics  
Figure 8.  
Base-emitter saturation  
voltage (NPN)  
Figure 9.  
Base-emitter saturation  
voltage (PNP)  
Figure 10. Base-emitter voltage (NPN)  
Figure 11. Base-emitter voltage (PNP)  
Figure 12. Resistive load switching time Figure 13. Resistive load switching time  
(NPN, on) (PNP, on)  
7/12  
Electrical characteristics  
BD6xxx  
Figure 14. Resistive load switching time Figure 15. Resistive load switching time  
(NPN, off) (PNP, off)  
2.2  
Test circuit  
Figure 16. Resistive load switching test circuit  
1) Fast electronic switch  
2) Non-inductive resistor  
Note:  
For PNP types voltage e current values are negative.  
8/12  
BD6xxx  
Package mechanical data  
3
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a lead-free second level interconnect . The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at: www.st.com  
9/12  
Package mechanical data  
BD6xxx  
10/12  
BD6xxx  
Revision history  
4
Revision history  
Table 4.  
Date  
Document revision history  
Revision  
Changes  
21-Jun-2004  
14-Jan-2008  
4
1. Technology change from epybase to planar.  
2. Updated Section 2.1: Typical characteristic (curves) on  
5
page 6  
3. Content reworked to improve readability.  
11/12  
BD6xxx  
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12/12  

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