BD676AS [ONSEMI]
4.0 A, 45 V PNP Darlington Bipolar Power Transistor;
| 型号： | BD676AS |
| 厂家： | 
ONSEMI |
| 描述： | 4.0 A, 45 V PNP Darlington Bipolar Power Transistor 局域网 开关 晶体管 功率双极晶体管 |
| 文件： | 总4页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BD676, BD676A, BD678,
BD678A, BD680, BD680A,
BD682, BD682T
Plastic Medium−Power
Silicon PNP Darlingtons
http://onsemi.com
This series of plastic, medium−power silicon PNP Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
4.0 AMP DARLINGTON
POWER TRANSISTORS
PNP SILICON
Features
• High DC Current Gain −
45, 60, 80, 100 VOLT, 40 WATT
h
= 750 (Min) @ I = 1.5 and 2.0 Adc
C
FE
• Monolithic Construction
• BD676, 676A, 678, 678A, 680, 680A, 682 are complementary
with BD675, 675A, 677, 677A, 679, 679A, 681
• BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703
• Pb−Free Package are Available*
TO−225AA
CASE 77
STYLE 1
MAXIMUM RATINGS
3
2
1
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
V
Vdc
CEO
BD676, BD676A
45
60
80
BD678, BD678A
BD680, BD680A
BD682
MARKING DIAGRAMS
100
Collector-Base Voltage
V
Vdc
CB
EB
BD676, BD676A
BD678, BD678A
BD680, BD680A
BD682
45
60
80
YWW
B
YWW
BD6xxG
BD6xxG
100
Emitter-Base Voltage
Collector Current
Base Current
V
5.0
4.0
0.1
Vdc
Adc
Adc
I
C
BD6xx = Device Code
xx = 76, 76A, 78, 78A,
80, 80A, 82, or 82T
I
B
Total Device Dissipation
P
D
Y
= Year
@ T = 25°C
40
0.32
W
W/°C
C
WW
G
= Work Week
= Pb−Free Package
Derate above 25°C
Operating and Storage Junction
Temperature Range
T , T
−55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Case
R
q
JC
3.13
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
Publication Order Number:
October, 2005 − Rev. 12
BD676/D
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T
ELECTRICAL CHARACTERISTICS (T = 25_C unless otherwise noted)
C
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I = 50 mAdc, I = 0)
BD676, 676A
BD678, 678A
BD680, 680A
BD682
BV
45
60
80
−
−
−
−
Vdc
CEO
C
B
100
Collector Cutoff Current (V = Half Rated V
, I = 0)
I
I
−
500
mAdc
CE
CEO
B
CEO
Collector Cutoff Current
mAdc
CBO
(V = Rated BV
(V = Rated BV
CB
, I = 0)
. I = 0, T = 100°C)
E
−
−
0.2
2.0
CB
CEO
CEO
E
C
Emitter Cutoff Current (V = 5.0 Vdc, I = 0)
I
−
2.0
mAdc
BE
C
EBO
ON CHARACTERISTICS
DC Current Gain (Note 1)
(I = 1.5 Adc, V = 3.0 Vdc)
h
FE
BD676, 678, 680, 682
BD676A, 678A, 680A
750
750
−
−
−
−
C
CE
(I = 2.0 Adc, V = 3.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage (Note 1)
(I = 1.5 Adc, I = 30 mAdc)
BD678, 680, 682
BD676A, 678A, 680A
V
CE(sat)
−
−
2.5
2.8
Vdc
Vdc
C
B
(I = 2.0 Adc, I = 40 mAdc)
C
B
Base−Emitter On Voltage (Note 1)
(I = 1.5 Adc, V = 3.0 Vdc)
V
BE(on)
BD678, 680, 682
BD676A, 678A, 680A
−
−
2.5
2.5
C
CE
(I = 2.0 Adc, V = 3.0 Vdc)
C
CE
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain (I = 1.5 Adc, V = 3.0 Vdc, f = 1.0 MHz)
h
fe
1.0
−
−
C
CE
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
50
45
5.0
40
35
30
25
20
2.0
1.0
BONDING WIRE LIMIT
THERMAL LIMIT at T = 25°C
0.5
C
SECONDARY BREAKDOWN LIMIT
15
10
0.2
0.1
BD676, 676A
BD678, 678A
T = 25°C
C
BD680, 680A
BD682
5.0
0
0.05
15 30
45
60
75
90
105 120 135 150 165
1.0
2.0
V
5.0
10
20
50
100
T , CASE TEMPERATURE (°C)
C
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
Figure 1. Power Temperature Derating
Figure 2. DC Safe Operating Area
There are two limitations on the power handling ability of
a transistor average junction temperature and secondary
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
breakdown. Safe operating area curves indicate I − V
C
CE
limits of the transistor that must be observed for reliable
operation; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
http://onsemi.com
2
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T
COLLECTOR
PNP
BD676, 676A
BD678, 678A
BD680, 680A
BD682
BASE
[ 8.0 k
[ 120
EMITTER
Figure 3. Darlington Circuit Schematic
ORDERING INFORMATION
Device
Package
Shipping
BD676
TO−225AA
500 Units / Box
500 Units / Box
BD676G
TO−225AA
(Pb−Free)
BD676A
TO−225AA
500 Units / Box
500 Units / Box
BD676AG
TO−225AA
(Pb−Free)
BD678
TO−225AA
500 Units / Box
500 Units / Box
BD678G
TO−225AA
(Pb−Free)
BD678A
TO−225AA
500 Units / Box
500 Units / Box
BD678AG
TO−225AA
(Pb−Free)
BD680
TO−225AA
500 Units / Box
500 Units / Box
BD680G
TO−225AA
(Pb−Free)
BD680A
TO−225AA
500 Units / Box
500 Units / Box
BD680AG
TO−225AA
(Pb−Free)
BD682
TO−225AA
500 Units / Box
500 Units / Box
BD682G
TO−225AA
(Pb−Free)
BD682T
TO−225AA
50 Units / Rail
50 Units / Rail
BD682TG
TO−225AA
(Pb−Free)
http://onsemi.com
3
BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T
PACKAGE DIMENSIONS
TO−225AA
CASE 77−09
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
−B−
F
C
U
Q
M
−A−
INCHES
DIM MIN MAX
MILLIMETERS
1
2 3
MIN
10.80
7.50
2.42
0.51
2.93
MAX
11.04
7.74
2.66
0.66
3.30
A
B
C
D
F
0.425
0.295
0.095
0.020
0.115
0.435
0.305
0.105
0.026
0.130
H
K
G
H
J
0.094 BSC
2.39 BSC
0.050
0.015
0.575
5
0.095
0.025
0.655
1.27
0.39
14.61
5
2.41
0.63
J
K
M
Q
R
S
U
V
16.63
V
TYP
TYP
_
_
G
R
0.148
0.045
0.025
0.145
0.040
0.158
0.065
0.035
0.155
−−−
3.76
1.15
0.64
3.69
1.02
4.01
1.65
0.88
3.93
−−−
M
M
M
B
0.25 (0.010)
A
S
D 2 PL
M
M
M
B
0.25 (0.010)
A
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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Phone: 81−3−5773−3850
For additional information, please contact your
local Sales Representative.
BD676/D
相关型号：
BD676LEADFREE
Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
CENTRAL
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