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BD680A

更新时间：2024-09-18 02:14:38

品牌：ONSEMI

描述：DARLINGTON POWER TRANSISTORS PNP SILICON

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BD680A 概述

DARLINGTON POWER TRANSISTORS PNP SILICON 达林顿功率晶体管PNP硅

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by BD676/D

SEMICONDUCTOR TECHNICAL DATA

. . . for use as output devices in complementary general–purpose amplifier applica-

tions.

•

High DC Current Gain —

= 750 (Min) @ I = 1.5 and 2.0 Adc

Monolithic Construction

BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A,

677, 677A, 679, 679A, 681

•

BD 678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703

4.0 AMPERE

DARLINGTON

POWER TRANSISTORS

PNP SILICON

45, 60, 80, 100 VOLTS

40 WATTS

MAXIMUM RATING

BD676

BD678

BD680

BD676A BD678A BD680A

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current

Symbol

BD682

100

Unit

Vdc

Adc

CEO

100

5.0

4.0

0.1

Base Current

Total Device Dissipation

@ T = 25

0.32

Watts

W/ C

Derate above 25 C

Operating and Storage Junction T , T

Temperating Range

–55 to +150

stg

CASE 77–08

TO–225AA TYPE

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

3.13

C/W

5.0

105 120 135 150

165

, CASE TEMPERATURE (

Figure 1. Power Temperature Derating

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(1)

Collector–Emitter Breakdown Voltage

(I = 50 mAdc, I = 0)

BD676, 676A

BD678, 678A

BD680, 680A

BD682

—

Vdc

CEO

100

Collector Cutoff Current (V

Collector Cutoff Current

= Half Rated V

, I = 0)

—

500

µAdc

CEO

mAdc

CBO

= Rated BV

, I = 0)

. I = 0, T = 100°C)

—

0.2

2.0

CEO

Emitter Cutoff Current (V

= 5.0 Vdc, I = 0)

EBO

—

2.0

mAdc

ON CHARACTERISTICS

(1)

DC Current Gain

(I = 1.5 Adc, V

= 3.0 Vdc)

BD676, 678, 680, 682

BD676A, 678A, 680A

750

—

(I = 2.0 Adc, V

(1)

Collector–Emitter Saturation Voltage

(I = 1.5 Adc, I = 30 mAdc)

BD678, 680, 682

BD676A, 678A, 680A

CE(sat)

—

2.5

2.8

Vdc

(I = 2.0 Adc, I = 40 mAdc)

(1)

Base–Emitter On Voltage

BE(on)

(I = 1.5 Adc, V

(I = 2.0 Adc, V

= 3.0 Vdc)

BD678, 680, 682

BD676A, 678A, 680A

—

2.5

DYNAMIC CHARACTERISTICS

Small–Signal Current Gain (I = 1.5 Adc, V

= 3.0 Vdc, f = 1.0 MHz)

2.0%.

1.0

—

(1) Pulse Test: Pulse Width 300 µs, Duty Cycle

5.0

2.0

There are two limitations on the power handling ability of a

transistor average junction temperature and secondary

1.0

breakdown. Safe operating area curves indicate I – V

lim-

BONDING WIRE LIMIT

its of the transistor that must be observed for reliable opera-

tion; e.g., the transistor must not be subjected to greater

dissipation than the curves indicate.

THERMAL LIMIT at T = 25°C

0.5

SECONDARY BREAKDOWN LIMIT

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the limita-

tions imposed by secondary breakdown.

0.2

0.1

BD676, 676A

BD678, 678A

BD680, 680A

BD682

= 25°C

0.05

1.0

2.0

5.0

100

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 2. DC Safe Operating Area

COLLECTOR

PNP

BD676, 676A

BD678, 678A

BD680, 680A

BD682

BASE

8.0 k

120

EMITTER

Figure 3. Darlington Circuit Schematic

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

–B–

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

INCHES

MILLIMETERS

–A–

DIM

MIN

MAX

0.435

0.305

0.105

0.026

0.130

MIN

10.80

7.50

2.42

0.51

2.93

MAX

11.04

7.74

2.66

0.66

3.30

0.425

0.295

0.095

0.020

0.115

0.094 BSC

2.39 BSC

0.050

0.015

0.575

0.095

0.025

0.655

1.27

0.39

14.61

2.41

0.63

16.63

TYP

0.148

0.045

0.025

0.145

0.040

0.158

0.055

0.035

0.155

–––

3.76

1.15

0.64

3.69

1.02

4.01

1.39

0.88

3.93

–––

0.25 (0.010)

D 2 PL

STYLE 1:

PIN 1. EMITTER

0.25 (0.010)

2. COLLECTOR

3. BASE

CASE 77–08

TO–225AA TYPE

ISSUE V

Motorola Bipolar Power Transistor Device Data

Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,

andspecifically disclaims any and all liability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447

6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609

INTERNET: http://Design–NET.com

HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

Motorola Bipolar Power Transistor Device Data

BD676/D

◊

BD680A 替代型号

型号	制造商	描述	替代类型	文档
TIP127G	ONSEMI	Plastic Medium-Power Complementary Silicon Transistors	功能相似
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