BD810G [ONSEMI]
Plastic High Power Silicon Transistor; 塑料大功率硅晶体管
| 型号： | BD810G |
| 厂家： | 
ONSEMI |
| 描述： | Plastic High Power Silicon Transistor |
| 文件： | 总5页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BD809 (NPN), BD810 (PNP)
Plastic High Power
Silicon Transistor
These devices are designed for use in high power audio amplifiers
utilizing complementary or quasi complementary circuits.
http://onsemi.com
Features
•ꢀDC Current Gain - h = 30 (Min) @ I = 2.0 Adc
FE
C
•ꢀPb-Free Packages are Available*
10 AMPERE
POWER TRANSISTORS
80 VOLTS
MAXIMUM RATINGS
Rating
90 WATTS
Symbol
Value
Unit
Collector-Emitter Voltage
V
V
80
Vdc
CEO
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
80
5.0
10
Vdc
Vdc
Adc
Adc
CBO
V
EBO
I
C
Base Current
I
B
6.0
Total Device Dissipation @ T = 25°C
P
D
90
720
W
W/°C
C
Derate above 25°C
TO-220AB
CASE 221A-09
STYLE 1
Operating and Storage Junction
Temperature Range
T , T
J
-ꢁ55 to +150
°C
stg
1
2
THERMAL CHARACTERISTICS
3
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction-to-Case
q
1.39
°C/W
JC
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAM
BD8xxG
AY WW
BD8xx
=
Device Code
x = 09 or 10
Assembly Location
Year
A
=
=
=
=
Y
WW
G
Work Week
Pb-Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©ꢀ Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 4
1
Publication Order Number:
BD809/D
BD809 (NPN), BD810 (PNP)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
BV
Min
Max
Unit
Collector-Emitter Sustaining Voltage (Note 1)
(I = 0.1 Adc, I = 0)
-
-
Vdc
CEO
80
C
B
Collector Cutoff Current
I
mAdc
mAdc
CBO
(V = 80 Vdc, I = 0)
CB
E
-
-
1.0
2.0
Emitter Cutoff Current
I
EBO
(V = 5.0 Vdc, I = 0)
BE C
DC Current Gain
h
FE
(I = 2.0 A, V = 2.0 V)
C CE
(I = 4.0 A, V = 2.0 V)
30
15
-
-
C
CE
Collector-Emitter Saturation Voltage (Note 1)
(I = 3.0 Adc, I = 0.3 Adc)
V
-
1.1
1.6
-
Vdc
Vdc
MHz
CE(sat)
C
B
Base-Emitter On Voltage (Note 1)
(I = 4.0 Adc, V = 2.0 Vdc)
V
BE(on)
-
C
CE
Current-Gain Bandwidth Product
(I = 1.0 Adc, V = 10 Vdc, f = 1.0 MHz)
f
T
1.5
C
CE
1. Pulse Test: Pulse Width x 300 ms, Duty Cycle x 2.0%.
90
.5 ms
1 ms
80
70
60
50
40
30
20
10
0
1 ms
5 ms
10
3
1
dc
0.3
0.1
1
3
10
30
100
0
25
50
75
100
125
150
175
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
T , CASE TEMPERATURE (°C)
C
Figure 1. Active Region DC Safe Operating Area
(see Note 1)
Figure 2. Power-Temperature Derating Curve
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2
BD809 (NPN), BD810 (PNP)
NPN
BD809
PNP
BD810
500
500
200
T = 150°C
J
T = 150°C
J
200
100
50
25°C
25°C
100
-ꢀ55°C
-ꢀ55°C
50
20
10
20
10
V
CE
= 2.0 V
V
CE
= 2.0 V
0.5
5.0
5.0
0.2
0.5
1.0
2.0
5.0
10
20
0.2
1.0
2.0
5.0
10
20
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 3. DC Current Gain
2.0
1.8
1.6
1.4
1.2
1.0
2.0
T = 25°C
J
T = 25°C
J
1.8
1.6
1.4
1.2
1.0
I
C
= 1.0 A
4.0 A
8.0 A
I
C
= 1.0 A
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
4.0 A
8.0 A
0
0
5.0 10
20
50 100
200 500 1000
2000 5000
5.0 10
20
50 100
200 500 1000 2000 5000
I , BASE CURRENT (mA)
B
I , BASE CURRENT (mA)
B
Figure 4. Collector Saturation Region
2.8
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
T = 25°C
J
T = 25°C
2.4
2.0
1.6
1.2
0.8
0.4
0
J
V
@ I /I = 10
C B
V
= I /I = 10
BE(sat) C B
BE(sat)
V
@ V = 2.0 V
CE
V
BE
@ V = 2.0 V
CE
BE
V
@ I /I = 10
C B
V @ I /I = 10
CE(sat) C B
CE(sat)
0.2
0.5
1.0
2.0
5.0
10
20
0.2
0.5
1.0
2.0
5.0
10
20
I , COLLECTOR CURRENT (AMP)
C
I , COLLECTOR CURRENT (AMP)
C
Figure 5. “On” Voltages
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3
BD809 (NPN), BD810 (PNP)
1.0
0.7
0.5
D = 0.5
0.2
0.3
0.2
0.1
0.05
0.02
P
(pk)
SINGLE
PULSE
0.1
0.07
0.05
q
(t) = r(t) q
JC JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
t
1
0.03
0.02
t
2
SINGLE PULSE
1
0.01
T
J(pk)
- T = P q (t)
C (pk) JC
DUTY CYCLE, D = t /t
1 2
0.01
0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0 5.0
20 30
50
100
200 300 500
1000
t, PULSE WIDTH (ms)
Figure 6. Thermal Response
Note 1:
The data of Figure 1 is based on T
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150°C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
= 150°C; T is
J(pk)
C
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I - V
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
J(pk)
C
CE
ORDERING INFORMATION
†
Device
Package
Shipping
BD809
TO-220
50 Units / Rail
BD809G
TO-220
(Pb-Free)
BD810
TO-220
50 Units / Rail
BD810G
TO-220
(Pb-Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
BD809 (NPN), BD810 (PNP)
PACKAGE DIMENSIONS
TO-220
CASE 221A-09
ISSUE AE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
SEATING
PLANE
-T-
C
B
F
T
S
INCHES
DIM MIN MAX
MILLIMETERS
4
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
4.09
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
A
K
Q
Z
1
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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ꢂUSA/Canada
Europe, Middle East and Africa Technical Support:
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Order Literature: http://www.onsemi.com/orderlit
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For additional information, please contact your local
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Japan Customer Focus Center
ꢂPhone: 81-3-5773-3850
BD809/D
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