BDC01DRLRA [ONSEMI]
500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN;
| 型号： | BDC01DRLRA |
| 厂家： | 
ONSEMI |
| 描述： | 500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN 晶体 放大器 晶体管 |
| 文件： | 总4页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by BDC01D/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
2
3
BASE
1
2
3
1
EMITTER
CASE 29–05, STYLE 14
TO–92 (TO–226AE)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
BDC01D
Unit
Vdc
Vdc
Vdc
Adc
V
CEO
V
CBO
V
EBO
100
100
5.0
0.5
Collector Current — Continuous
I
C
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.0
8.0
Watts
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
2.5
20
Watts
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
125
50
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector–Emitter Voltage
V
100
—
—
0.1
100
Vdc
Adc
(BR)CEO
(I = 10 mA, I = 0)
C
B
Collector Cutoff Current
(V = 100 V, I = 0)
I
CBO
CB
Emitter Cutoff Current
(I = 0, V = 5.0 V)
E
I
—
nAdc
EBO
C
EB
Motorola, Inc. 1996
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
ON CHARACTERISTICS
Symbol
Min
Max
Unit
DC Current Gain
h
FE
—
(I = 100 mA, V
= 1.0 V)
= 2.0 V)
40
25
400
—
C
CE
CE
(I = 500 mA, V
C
(1)
Collector–Emitter Saturation Voltage
V
—
0.7
Vdc
Vdc
CE(sat)
(I = 1000 mA, I = 100 mA)
C
B
(1)
Collector–Emitter On Voltage
V
—
1.2
BE(on)
(I = 1000 mA, V = 1.0 V)
C
CE
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth Product
f
50
—
—
MHz
pF
T
(I = 200 mA, V
= 5.0 V, f = 20 MHz)
C
CE
Output Capacitance
(V = 10 V, I = 0, f = 1.0 MHz)
C
30
ob
CB
E
1. Pulse Test: Pulse Width
300 s; Duty Cycle 2.0%.
400
T
= 125°C
J
V
= 1.0 V
CE
200
25°C
–55°C
100
80
60
40
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
300
500
I
, COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
1.0
1.0
T
= 25°C
J
T
= 25°C
J
0.8
0.6
0.4
0.8
0.6
0.4
V
@ I /I = 10
C B
BE(sat)
50
mA
I
= 10 mA
100 mA
250 mA
500 mA
C
V
@ V
= 1.0 V
CE
BE(on)
0.2
0
0.2
0
V
@ I /I = 10
C B
CE(sat)
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
0.5
1.0
2.0
5.0
, COLLECTOR CURRENT (mA)
C
10
20
50
100 200
500
I , BASE CURRENT (mA)
I
B
Figure 2. Collector Saturation Region
Figure 3. “On” Voltages
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
80
60
–0.8
–1.2
T
= 25°C
J
40
C
ibo
–1.6
–2.0
20
θ
for V
BE
VB
10
8.0
–2.4
–2.8
6.0
C
obo
4.0
0.1
0.5
1.0
2.0
5.0
10
20
50
100
200
500
0.2
0.5
1.0
2.0
5.0
10
20
50
100
I
, COLLECTOR CURRENT (mA)
V
, REVERSE VOLTAGE (VOLTS)
C
R
Figure 4. Base–Emitter Temperature Coefficient
Figure 5. Capacitance
300
200
V
T
= 2.0 V
CE
= 25
DUTY CYCLE
≤ 10%
°C
J
2 k
1 k
1.0 ms
100
µs
500
100
1.0 s
T
= 25°C
C
T
= 25°C
A
200
100
50
70
50
dc
dc
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPSW05
20
10
1.0
MPSW06
30
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
2.0
V
5.0
10
20
60 80 100
I
, COLLECTOR CURRENT (mA)
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
C
CE
Figure 6. Current–Gain — Bandwidth Product
Figure 7. Active Region — Safe Operating Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
K
R
SEATING
PLANE
P
L
F
INCHES
MIN
MILLIMETERS
DIM
A
B
C
D
F
G
H
J
K
L
N
P
MAX
0.205
0.310
0.165
0.022
0.019
0.055
0.105
0.024
–––
MIN
4.44
7.37
3.18
0.46
0.41
1.15
2.42
0.46
12.70
6.35
2.04
–––
MAX
5.21
7.87
4.19
0.56
0.48
1.39
2.66
0.61
–––
0.175
0.290
0.125
0.018
0.016
0.045
0.095
0.018
0.500
0.250
0.080
–––
X X
D
G
H
V
J
–––
–––
SECTION X–X
0.105
0.100
–––
2.66
2.54
–––
C
1
2
3
N
R
V
0.135
0.135
3.43
3.43
N
–––
–––
STYLE 14:
PIN 1. EMITTER
CASE 029–05
2. COLLECTOR
3. BASE
(TO–226AE)
ISSUE AD
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
andspecificallydisclaimsanyandallliability, includingwithoutlimitationconsequentialorincidentaldamages. “Typical” parameters can and do vary in different
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BDC01D/D
◊
相关型号：
BDC01DRLRE
TRANSISTOR 500 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AE, 3 PIN, BIP General Purpose Small Signal
ONSEMI
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