BDW42BV [ONSEMI]

15A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN;


型号：	BDW42BV
厂家：	ONSEMI
描述：	15A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN 局域网开关晶体管
文件：	总7页 (文件大小：142K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BDW42G - NPN, BDW46G,

BDW47G - PNP

Darlington Complementary

Silicon Power Transistors

This series of plastic, medium−power silicon NPN and PNP

Darlington transistors are designed for general purpose and low speed

switching applications.

http://onsemi.com

Features

15 AMP DARLINGTON

COMPLEMENTARY SILICON

POWER TRANSISTORS

80−100 VOLT, 85 WATT

• High DC Current Gain − h = 2500 (typ) @ I = 5.0 Adc.

• Collector Emitter Sustaining Voltage @ 30 mAdc:

= 80 Vdc (min) − BDW46

100 Vdc (min) − BDW42/BDW47

CEO(sus)

• Low Collector Emitter Saturation Voltage

= 2.0 Vdc (max) @ I = 5.0 Adc

MARKING

DIAGRAM

CE(sat)

3.0 Vdc (max) @ I = 10.0 Adc

• Monolithic Construction with Built−In Base Emitter Shunt resistors

• TO−220AB Compact Package

• These are Pb−Free Packages*

TO−220AB

BDWxx

CASE 221A−09

AYWWG

STYLE 1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector-Emitter Voltage

CEO

Vdc

BDW46

BDW42, BDW47

Collector-Base Voltage

100

BDWxx = Device Code

x = 42, 46, or 47

Vdc

Assembly Location

Year

BDW46

BDW42, BDW47

100

Work Week

Pb−Free Package

Emitter-Base Voltage

Collector Current

Base Current

5.0

Vdc

Adc

0.5

ORDERING INFORMATION

Total Device Dissipation

@ T = 25°C

Derate above 25°C

0.68

W/°C

Device

Package

Shipping

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

°C

BDW42G

TO−220AB

(Pb−Free)

50 Units/Rail

stg

THERMAL CHARACTERISTICS

Characteristic

BDW46G

BDW47G

TO−220AB

(Pb−Free)

50 Units/Rail

Symbol

Max

Unit

TO−220AB

(Pb−Free)

Thermal Resistance,

Junction−to−Case

1.47

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

October, 2011 − Rev. 15

BDW42/D

BDW42G − NPN, BDW46G, BDW47G − PNP

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector Emitter Sustaining Voltage (Note 1)

(I = 30 mAdc, I = 0)

Vdc

CEO(sus)

BDW46

BDW42/BDW47

100

−

Collector Cutoff Current

(V = 40 Vdc, I = 0)

mAdc

CEO

BDW46

BDW42/BDW47

−

2.0

(V = 50 Vdc, I = 0)

Collector Cutoff Current

(V = 80 Vdc, I = 0)

CBO

BDW46

BDW42/BDW47

−

1.0

(V = 100 Vdc, I = 0)

Emitter Cutoff Current

(V = 5.0 Vdc, I = 0)

−

2.0

EBO

ON CHARACTERISTICS (Note 1)

DC Current Gain

(I = 5.0 Adc, V = 4.0 Vdc)

1000

250

−

(I = 10 Adc, V = 4.0 Vdc)

Collector−Emitter Saturation Voltage

(I = 5.0 Adc, I = 10 mAdc)

Vdc

CE(sat)

−

2.0

3.0

(I = 10 Adc, I = 50 mAdc)

Base−Emitter On Voltage

(I = 10 Adc, V = 4.0 Vdc)

−

3.0

BE(on)

SECOND BREAKDOWN (Note 2)

Second Breakdown Collector

Current with Base Forward Biased

BDW42

Adc

S/b

= 28.4 Vdc

= 40 Vdc

= 22.5 Vdc

= 36 Vdc

3.0

1.2

3.8

1.2

−

BDW46/BDW47

DYNAMIC CHARACTERISTICS

Magnitude of common emitter small signal short circuit current transfer ratio

(I = 3.0 Adc, V = 3.0 Vdc, f = 1.0 MHz)

4.0

−

MHz

Output Capacitance

(V = 10 Vdc, I = 0, f = 0.1 MHz)

BDW42

−

200

300

BDW46/BDW47

Small−Signal Current Gain

(I = 3.0 Adc, V = 3.0 Vdc, f = 1.0 kHz)

300

−

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

2. Pulse Test non repetitive: Pulse Width = 250 ms.

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BDW42G − NPN, BDW46G, BDW47G − PNP

100

125

150

T , CASE TEMPERATURE (°C)

Figure 1. Power Temperature Derating Curve

5.0

- 30 V

R AND R VARIED TO OBTAIN DESIRED CURRENT LEVELS

3.0

2.0

D MUST BE FAST RECOVERY TYPES, e.g.:

ꢂ1N5825 USED ABOVE I [ 100 mA

ꢂMSD6100 USED BELOW I [ 100 mA

SCOPE

1.0

0.7

0.5

TUT

APPROX

+ 8.0 V

0.3

0.2

[ 8.0 k

[ 150

= 30 V

I /I = 250

+ 4.0 V

C B

0.1

0.07

0.05

= I

B1 B2

APPROX

- 12 V

25 ms

for t and t , D id disconnected

T = 25°C

t @ V

= 0 V

BE(off)

and V = 0

t , t v 10 ns

DUTY CYCLE = 1.0%

0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

For NPN test circuit reverse all polarities

I , COLLECTOR CURRENT (AMP)

Figure 3. Switching Times

Figure 2. Switching Times Test Circuit

1.0

0.7

0.5

D = 0.5

0.2

0.3

0.2

0.1

(pk)

0.05

0.02

0.1

0.07

0.05

(t) = r(t) R

= 1.92°C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t

0.03

0.02

SINGLE PULSE

0.01

- T = P

R (t)

J(pk)

(pk)

DUTY CYCLE, D = t /t

1 2

0.01

0.01 0.02 0.03 0.05

0.1

0.2 0.3 0.5

1.0

2.0 3.0 5.0

20 30

100

200 300 500

1000

t, TIME OR PULSE WIDTH (ms)

Figure 4. Thermal Response

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BDW42G − NPN, BDW46G, BDW47G − PNP

ACTIVE−REGION SAFE OPERATING AREA

0.1 ms

0.5 ms

T = 25°C

1.0 ms

0.5 ms

5.0

SECOND BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMITED

SECOND BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMITED

2.0

1.0

0.5

2.0

1.0

0.5

@ T = 25°C (SINGLE PULSE)

0.2

0.1

0.2

0.1

BDW46

BDW47

BDW42

0.05

1.0

2.0 3.0

5.0 7.0 10

20 30

50 70 100

1.0

2.0 3.0

5.0 7.0 10

20 30

50 70 100

, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. BDW42

Figure 6. BDW46 and BDW47

There are two limitations on the power handling ability of a

transistor: average junction temperature and second

Second breakdown pulse limits are valid for duty cycles to

10% provided T

the data in Figure 4. At high case temperatures, thermal

limitations will reduce the power that can be handled to values

v 200°C. T

may be calculated from

J(pk)

breakdown. Safe operating area curves indicate I −V limits

of the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipation

than the curves indicate. The data of Figure 5 and 6 is based on

less than the limitations imposed by second breakdown.

*Linear extrapolation

J(pk)

= 200°C; T is variable depending on conditions.

10,000

5000

300

T = + 25°C

3000

2000

200

1000

500

100

300

200

T = 25°C

I = 3.0 A

= 3.0 V

100

BDW46, 47 (PNP)

BDW42 (NPN)

BDW46, 47 (PNP)

BDW42 (NPN)

1.0

0.1 0.2

2.0

5.0 10

50 100 200

500 1000

0.5

1.0 2.0

5.0 10

50 100

V , REVERSE VOLTAGE (VOLTS)

f, FREQUENCY (kHz)

Figure 7. Small−Signal Current Gain

Figure 8. Capacitance

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BDW42G − NPN, BDW46G, BDW47G − PNP

BDW42 (NPN)

BDW46, 47 (PNP)

20,000

10,000

20,000

= 3.0 V

10,000

7000

5000

T = 150°C

3000

2000

3000

2000

25°C

1000

500

1000

-ꢃ55°C

700

500

-ꢃ55°C

300

200

300

200

0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

I , COLLECTOR CURRENT (AMP)

Figure 9. DC Current Gain

3.0

2.6

2.2

1.8

3.0

T = 25°C

2.6

2.2

1.8

1.4

I = 2.0 A

4.0 A

6.0 A

I = 2.0 A

4.0 A

6.0 A

1.4

1.0

0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

20 30

1.0

0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

20 30

I , BASE CURRENT (mA)

Figure 10. Collector Saturation Region

3.0

2.5

3.0

T = 25°C

2.5

2.0

1.5

@ I /I = 250

C B

BE(sat)

@ V = 4.0 V

1.5

1.0

0.5

@ V = 4.0 V

@ I /I = 250

C B

BE(sat)

1.0

0.5

@ I /I = 250

C B

CE(sat)

@ I /I = 250

C B

CE(sat)

0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

0.1

0.2 0.3

0.5 0.7 1.0

2.0 3.0

5.0 7.0 10

I , COLLECTOR CURRENT (AMP)

Figure 11. “On” Voltages

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BDW42G − NPN, BDW46G, BDW47G − PNP

BDW42 (NPN)

BDW46, 47 (PNP)

+ꢃ5.0

+ꢃ4.0

+ꢃ5.0

+ꢃ4.0

+ꢃ3.0

+ꢃ2.0

+ꢃ1.0

*I /I v 250

C B

*I /I v 250

C B

+ꢃ3.0

+25°C to 150°C

25°C to 150°C

+ꢃ2.0

+ꢃ1.0

-ꢃ55°C to 25°C

-ꢃ1.0

-ꢃ2.0

*q for V

-ꢃ1.0

CE(sat)

*q for V

CE(sat)

-ꢃ2.0

-ꢃ3.0

-ꢃ4.0

-ꢃ5.0

-ꢃ55°C to +25°C

25°C to 150°C

for V

VB BE

-ꢃ3.0

-ꢃ4.0

-ꢃ55°C to +25°C

+25°C to 150°C

for V

-ꢃ55°C to 25°C

2.0 3.0 5.0 7.0 10

-ꢃ5.0

0.1

0.2 0.3

0.5

1.0

2.0 3.0

5.0

0.1

0.2 0.3

0.5 0.7 1.0

I , COLLECTOR CURRENT (AMP)

Figure 12. Temperature Coefficients

FORWARD

REVERSE

= 30 V

REVERSE

FORWARD

= 30 V

T = 150°C

100°C

25°C

100°C

25°C

-ꢃ1

+ꢃ0.6 +ꢃ0.4 +ꢃ0.2

-ꢃ0.2 -ꢃ0.4 -ꢃ0.6 -ꢃ0.8 -ꢃ1.0 -ꢃ1.2 -ꢃ1.4

-ꢃ0.6 -ꢃ0.4 -ꢃ0.2

+ꢃ0.2 +ꢃ0.4 +ꢃ0.6 +ꢃ0.8 +ꢃ1.0 +ꢃ1.2 + 1.4

V , BASE-EMITTER VOLTAGE (VOLTS)

, BASE-EMITTER VOLTAGE (VOLTS)

Figure 13. Collector Cut−Off Region

NPN

BDW42

COLLECTOR

PNP

BDW46

BDW47

COLLECTOR

BASE

[ 8.0 k

[ 60

[ 8.0 k

[ 60

EMITTER

Figure 14. Darlington Schematic

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BDW42G − NPN, BDW46G, BDW47G − PNP

PACKAGE DIMENSIONS

TO−220

CASE 221A−09

ISSUE AG

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

SEATING

PLANE

−T−

INCHES

DIM MIN MAX

MILLIMETERS

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.36

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

---

MAX

15.75

10.28

4.82

0.91

4.09

2.66

4.10

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

---

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.014

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

---

0.620

0.405

0.190

0.036

0.161

0.105

0.161

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

---

0.080

2.04

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

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BDW42/D

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BDW42BV [ONSEMI]

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