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BDW47G [ONSEMI]

Darlington Complementary Silicon Power Transistors; 达林顿互补硅功率晶体管

BDW47G


型号：	BDW47G
厂家：	ONSEMI
描述：	Darlington Complementary Silicon Power Transistors 达林顿互补硅功率晶体管晶体晶体管
文件：	总8页 (文件大小：78K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

相关型号：

BDW47L

15A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB

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MOTOROLA

BDW47N

Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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MOTOROLA

BDW47S

Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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MOTOROLA

BDW47T

15A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB

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ONSEMI

BDW47U

15A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB

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MOTOROLA

BDW47U2

15 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB

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MOTOROLA

BDW47UA

15 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220AB

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MOTOROLA

BDW47W

15A, 100V, PNP, Si, POWER TRANSISTOR, TO-220AB

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MOTOROLA

BDW47WD

Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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MOTOROLA

BDW48

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

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MOTOROLA

BDW48

Silicon PNP Darlington Power Transistor

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ISC

BDW51

Power Transistors

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CENTRAL

BDW51

Silicon NPN Power Transistor

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ISC

BDW51

Bipolar NPN Device in a Hermetically sealed TO3

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SEME-LAB

BDW51A

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

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SEME-LAB

BDW51A

Power Transistors

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CENTRAL

BDW51A

Silicon NPN Power Transistor

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ISC

BDW51ALEADFREE

Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

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CENTRAL

BDW51B

Bipolar NPN Device in a Hermetically sealed TO3 Metal Package

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SEME-LAB

BDW51B

Power Transistors

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CENTRAL

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