BFL4026-1E [ONSEMI]
N 沟道功率 MOSFET，900V，5A，3.6Ω;
| 型号： | BFL4026-1E |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道功率 MOSFET，900V，5A，3.6Ω |
| 文件： | 总7页 (文件大小：274K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1797A
BFL4026
N-Channel Power MOSFET
http://onsemi.com
Ω
900V, 5A, 3.6 , TO-220F-3FS
Features
•
•
ON-resistance R (on)=2.8 (typ.)
10V drive
Input capacitance Ciss=650pF (typ.)
Ω
DS
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
900
±30
5
DSS
V
V
GSS
*1
I
Limited only by maximum temperature Tch=150 C
A
°
Dc
Drain Current (DC)
I
*2
Tc=25 C (Our ideal heat dissipation condition)*3
3.5
10
A
°
Dpack
Drain Current (Pulse)
Allowable Power Dissipation
I
PW 10 s, duty cycle 1%
A
≤
μ
≤
DP
2.0
35
W
W
P
D
Tc=25 C (Our ideal heat dissipation condition)*3
°
Channel Temperature
Tch
150
C
C
°
°
Storage Temperature
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
E
132
5
mJ
A
AS
I
AV
Note : 1 Shows chip capability
*
2 Package limited
*
3 Our condition is radiation from backside.
*
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
4 V =50V, L=10mH, I =5A (Fig.1)
*
*
DD
5 L 10mH, single pulse
AV
≤
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: TO-220F-3FS
7528-001
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
4.7
10.16
3.18
BFL4026-1E
2.54
Marking
Electrical Connection
2
FL4026
1
LOT No.
2.76
1.47 MAX
0.8
3
1
2
3
0.5
1 : Gate
2 : Drain
3 : Source
2.54
2.54
TO-220F-3FS
Semiconductor Components Industries, LLC, 2013
July, 2013
71112 TKIM/70710QB TKIM TC-00002399 No. A1797-1/7
BFL4026
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
900
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=10mA, V =0V
V
mA
nA
V
(BR)DSS
D
GS
=720V, V =0V
I
I
V
V
V
V
1.0
DSS
DS
GS
DS
DS
GS
=±30V, V =0V
DS
±100
4.0
GSS
V
(off)
GS
=10V, I =1mA
2.0
1.4
D
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
| yfs |
(on)
=20V, I =2.5A
2.8
S
D
R
I
=2.5A, V =10V
D GS
2.8
650
100
35
3.6
Ω
DS
Ciss
pF
pF
pF
ns
Output Capacitance
Coss
Crss
V
=30V, f=1MHz
DS
Reverse Transfer Capacitance
Turn-ON Delay Time
t
t
t
t
(on)
14
d
r
Rise Time
37
ns
See Fig.2
Turn-OFF Delay Time
(off)
117
39
ns
d
f
Fall Time
ns
Total Gate Charge
Qg
33
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Qgs
Qgd
V
=200V, V =10V, I =5A
GS
5.3
DS
D
16.5
0.85
720
4700
V
SD
I =5A, V =0V
S GS
1.2
t
ns
See Fig.3
I =5A, V =0V, di/dt=100A/
rr
s
Q
μ
nC
S
GS
rr
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
V
IN
V
=200V
DD
D
10V
0V
L
≥50Ω
RG
I
=2.5A
D
V
R =80Ω
G
IN
L
D
V
OUT
BFL4026
PW=10μs
S
D.C.≤0.5%
10V
0V
V
DD
50Ω
G
BFL4026
P. G
S
R
=50Ω
GS
Fig.3 Reverse Recovery Time Test Circuit
D
BFL4026
500μH
G
S
V =50V
DD
Driver MOSFET
Ordering Information
Device
Package
Shipping
memo
Pb Free
BFL4026-1E
TO-220F-3FS
50pcs./magazine
No. A1797-2/7
BFL4026
I
-- V
DS
I
-- V
D
D GS
10
9
8
7
6
5
4
3
2
Tc=25°C
V
=20V
DS
8
7
6
C
75°
6V
5V
5
4
3
2
1
0
1
V
=4V
GS
0
0
5
10
15
20
25
30
35
40
45
50
0
2
4
6
8
10
12
IT15762
Drain-to-Source Voltage, V
-- V
IT15761
Gate-to-Source Voltage, V
-- V
DS
GS
R
(on) -- V
GS
R
(on) -- Tc
DS
DS
9
8
7
6
5
4
3
2
10
9
I =2.5A
D
Single pulse
Single pulse
8
7
6
Tc=75°C
5
4
25°C
3
--25°C
2
1
0
1
0
2
3
4
5
6
7
8
9
10 11 12 13 14 15
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, V
GS
-- V
IT15763
Case Temperature, Tc -- °C
IT15764
| yfs | -- I
I
-- V
D
S SD
7
5
2
V
=0V
V
=20V
GS
Single pulse
DS
10
7
5
3
2
3
2
1.0
1.0
7
5
7
5
3
2
3
2
0.1
7
5
0.1
7
5
3
2
3
0.01
0.01
0.2
2
3
5
7
2
3
5
7
2
3
5
7
10
0.4
0.6
0.8
1.0
1.2
0.1
1.0
Drain Current, I -- A
IT15765
IT15766
Diode Forward Voltage, V
SD
-- V
D
SW Time -- I
Ciss, Coss, Crss -- V
DS
D
7
5
5
V
V
=200V
=10V
f=1MHz
DD
GS
3
2
3
2
1000
Ciss
7
5
100
3
2
7
5
100
3
2
7
5
t (on)
d
3
2
10
7
0.1
10
0
5
10
15
20
25
30
35
40
45
50
2
3
5
7
2
3
5
7
1.0
10
IT15767
Drain Current, I -- A
IT15768
Drain-to-Source Voltage, V
-- V
D
DS
No. A1797-3/7
BFL4026
V
GS
-- Qg
A S O
2
10
9
V
=200V
I
=10A (PW≤10μs)
DS
=5A
DP
10
7
5
I
D
I
(*1)=5A
Dc
8
3
2
I
(*2)=3.5A
Dpack
7
1.0
6
7
5
5
3
2
4
Operation in
this area is
0.1
3
7
5
limited by R (on).
DS
2
3
2
1
0
Tc=25°C
Single pulse
*1. Shows chip capability
*2. Our ideal heat dissipation condition
0.01
0.1
0
0
0
5
10
15
20
25
30
35
40
2
3
5 7
2
3
5 7
2
3
5 7
2
3
5 7 2
1000
1.0
10
100
IT15769
Drain-to-Source Voltage, V
-- V
IT15770
Total Gate Charge, Qg -- nC
DS
P
-- Ta
P
-- Tc
D
D
40
35
30
25
20
15
10
2.5
2.0
1.5
1.0
0.5
0
5
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT15771
Case Temperature, Tc -- °C
IT15772
E
-- Ta
AS
120
100
80
60
40
20
0
25
50
75
100
125
150
175
IT10478
Ambient Temperature, Ta -- °C
No. A1797-4/7
BFL4026
Magazine Specification
BFL4026-1E
No. A1797-5/7
BFL4026
Outline Drawing
BFL4026-1E
Mass (g) Unit
1.8
mm
* For reference
No. A1797-6/7
BFL4026
Note on usage : Since the BFL4026 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1797-7/7
相关型号：
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N-Channel Power MOSFET, 500V, 16A, 430mΩ, Single TO-220F-3FS, TO-220F-3FS, 50-TUBE
ONSEMI
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