BMS4007-1E [ONSEMI]
N 沟道，功率 MOSFET，75V，60A，7.8mΩ;
| 型号： | BMS4007-1E |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道，功率 MOSFET，75V，60A，7.8mΩ |
| 文件： | 总5页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1820
BMS4007
N-Channel Power MOSFET
http://onsemi.com
( )
Ω
75V, 60A, 7.8m , TO-220ML LS
Features
•
ON-resistance R (on)=6m (typ.)
Input capacitance Ciss=9700pF (typ.)
10V drive
Ω
DS
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
75
DSS
V
±20
V
GSS
I
60
A
D
Drain Current (Pulse)
I
DP
PW 10 s, duty cycle 1%
240
A
≤
μ
≤
2.0
W
W
Allowable Power Dissipation
P
D
Tc=25 C
30
150
°
Channel Temperature
Tch
C
C
°
°
Storage Temperature
Tstg
--55 to +150
299
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
mJ
A
AS
I
AV
48
Note : 1 V =48V, L=100 H, I =48A (Fig.1)
*
μ
DD
2 L 100 H, Single pulse
AV
*
≤
μ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
Product & Package Information
• Package
: TO-220ML(LS)
7525-002
• JEITA, JEDEC
: SC-67, SOT-186A
• Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine
4.5
10.0
3.2
2.8
Marking
Electrical Connection
2
MS4007
LOT No.
1
1.6
1.2
0.75
3
1
2
3
0.7
1 : Gate
2 : Drain
3 : Source
2.55
2.55
TO-220ML(LS)
Semiconductor Components Industries, LLC, 2013
July, 2013
82510QA TK IM TC-00002454 No. A1820-1/5
BMS4007
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
75
2
V
μA
μA
V
(BR)DSS
D
GS
=75V, V =0V
I
I
V
V
V
V
10
DSS
DS
GS
DS
DS
GS
=±16V, V =0V
DS
±10
4
GSS
V
(off)
GS
=10V, I =1mA
D
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
| yfs |
(on)
=10V, I =30A
110
6
S
D
R
I
=30A, V =10V
D GS
7.8
mΩ
pF
pF
pF
ns
DS
Ciss
9700
540
360
100
180
460
160
160
40
Output Capacitance
Coss
Crss
V
=20V, f=1MHz
DS
Reverse Transfer Capacitance
Turn-ON Delay Time
t
t
t
t
(on)
d
r
Rise Time
ns
See Fig.2
Turn-OFF Delay Time
(off)
ns
d
f
Fall Time
ns
Total Gate Charge
Qg
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Qgs
Qgd
V
=48V, V =10V, I =60A
GS
DS
D
40
V
SD
I =60A, V =0V
0.9
1.2
S
GS
t
70
ns
See Fig.3
rr
I =60A, V =0V, di/dt=100A/
s
μ
Q
183
nC
S
GS
rr
Fig.1 Avalanche Resistance Test Circuit
Fig.2 Switching Time Test Circuit
V
IN
V =48V
DD
D
10V
0V
L
I
=30A
D
≥50Ω
V
IN
R =1.6Ω
L
G
D
V
OUT
BMS4007
PW=10μs
D.C.≤1%
10V
0V
S
V
DD
50Ω
G
BMS4007
P. G
50Ω
S
Fig.3 Reverse Recovery Time Test Circuit
D
BMS4007
L
G
S
V
DD
Driver MOSFET
No. A1820-2/5
BMS4007
I
D
-- V
DS
I
-- V
D GS
120
100
80
120
100
80
Tc=25°C
V
DS
=10V
60
60
40
40
20
0
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
IT15897
Drain-to-Source Voltage, V
DS
-- V
IT15896
Gate-to-Source Voltage, V -- V
GS
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
14
12
10
8
18
16
14
12
10
8
Single pulse
I =30A
Single pulse
D
6
4
6
2
0
4
2
--50
--25
0
25
50
75
100
125
150
3
4
5
6
7
8
9
10
IT15922
Gate-to-Source Voltage, V
GS
-- V
Case Temperature, Tc -- °C
IT15899
| yfs | -- I
I
-- V
D
S SD
3
2
3
2
V
=0V
V
=10V
GS
Single pulse
DS
100
7
5
3
2
100
7
5
10
7
5
3
2
3
2
1.0
7
5
3
2
10
7
5
0.1
3
2
7
5
3
2
1.0
0.1
0.01
0.2
2
3
5
7
2
3
5
7
2
3
5
7
0.4
0.6
0.8
1.0
1.2
1.4
IT15901
1.0
10
100
Drain Current, I -- A
IT15900
Diode Forward Voltage, V
SD
-- V
D
SW Time -- I
Ciss, Coss, Crss -- V
DS
D
1000
3
2
f=1MHz
V
V
=48V
DD
=10V
7
GS
10000
5
7
5
3
2
3
2
1000
t (on)
d
7
5
100
7
5
3
2
2
3
5
7
2
3
5
7
2
3
5
7
0
5
10
15
20
25
30
IT15903
0.1
1.0
10
100
IT15902
Drain Current, I -- A
Drain-to-Source Voltage, V
DS
-- V
D
No. A1820-3/5
BMS4007
V
GS
-- Qg
A S O
10
9
7
5
3
2
V
I
=48V
I
=240A (PW≤10μs)
DS
=60A
DP
D
10
I
=60A
D
8
7
5
3
2
7
10
6
7
5
Operation in
this area is
3
2
5
1.0
4
limited by R (on).
DS
7
5
3
2
3
0.1
2
7
5
1
0
Tc=25°C
3
2
Single pulse
0.01
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
0
0
0
50
100
150
200
IT15904
1.0
10
100
IT15905
Drain-to-Source Voltage, V
-- V
Total Gate Charge, Qg -- nC
DS
P
-- Ta
P
-- Tc
D
D
2.5
2.0
1.5
1.0
35
30
25
20
15
10
0.5
0
5
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT15906
Case Temperature, Tc -- °C
IT15907
E
-- Ta
AS
120
100
80
60
40
20
0
25
50
75
100
125
150
175
IT10478
Ambient Temperature, Ta -- °C
No. A1820-4/5
BMS4007
Note on usage : Since the BMS4007 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1820-5/5
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