BS170RLRPG [ONSEMI]
Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 (TO−226); 小信号MOSFET 500毫安, 60伏特N沟道TO- 92 ( TO- 226 )型号: | BS170RLRPG |
厂家: | ONSEMI |
描述: | Small Signal MOSFET 500 mA, 60 Volts N−Channel TO−92 (TO−226) |
文件: | 总4页 (文件大小:58K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BS170
Preferred Device
Small Signal MOSFET
500 mA, 60 Volts
N−Channel TO−92 (TO−226)
Features
http://onsemi.com
• Pb−Free Package is Available*
500 mA, 60 Volts
RDS(on) = 5.0 W
MAXIMUM RATINGS
Rating
Drain−Source Voltage
Symbol
Value
Unit
V
DS
60
Vdc
N−Channel
Gate−Source Voltage
− Continuous
D
V
V
GSM
20
40
Vdc
Vpk
GS
− Non−repetitive (t ≤ 50 ms)
p
Drain Current (Note)
I
0.5
Adc
mW
°C
D
G
Total Device Dissipation @ T = 25°C
P
350
A
D
Operating and Storage Junction
Temperature Range
T , T
−55 to
+150
J
stg
S
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
TO−92 (TO−226)
CASE 29
NOTE: The Power Dissipation of the package may result in a lower continuous
drain current.
STYLE 30
1
2
3
MARKING DIAGRAM
& PIN ASSIGNMENT
BS170
AYWWG
G
1
2
3
Drain Gate Source
BS170 = Device Code
A
= Assembly Location
Y
= Year
WW
G
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
August, 2005 − Rev. 5
BS170/D
BS170
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate Reverse Current
I
−
0.01
90
10
−
nAdc
Vdc
GSS
(V = 15 Vdc, V = 0)
GS
DS
Drain−Source Breakdown Voltage
(V = 0, I = 100 mAdc)
V
60
(BR)DSS
GS
D
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
V
0.8
−
2.0
1.8
−
3.0
5.0
0.5
−
Vdc
W
GS(Th)
(V = V , I = 1.0 mAdc)
DS
GS
D
Static Drain−Source On Resistance
(V = 10 Vdc, I = 200 mAdc)
r
DS(on)
GS
D
Drain Cutoff Current
(V = 25 Vdc, V = 0 Vdc)
I
−
mA
D(off)
DS
GS
Forward Transconductance
(V = 10 Vdc, I = 250 mAdc)
g
fs
−
200
mmhos
DS
D
SMALL−SIGNAL CHARACTERISTICS
Input Capacitance
C
−
−
60
pF
iss
(V = 10 Vdc, V = 0, f = 1.0 MHz)
DS
GS
SWITCHING CHARACTERISTICS
Turn−On Time
(I = 0.2 Adc) See Figure 1
D
t
t
−
−
4.0
4.0
10
10
ns
ns
on
Turn−Off Time
off
(I = 0.2 Adc) See Figure 1
D
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Device
Package
Shipping†
BS170
TO−92 (TO−226)
1000 Unit/Tube
1000 Unit/Tube
BS170G
TO−92 (TO−226)
(Pb−Free)
BS170RLRA
TO−92 (TO−226)
2000 Tape & Reel
2000 Tape & Reel
BS170RLRAG
TO−92 (TO−226)
(Pb−Free)
BS170RLRM
TO−92 (TO−226)
2000 Tape & Reel
2000 Tape & Reel
BS170RLRMG
TO−92 (TO−226)
(Pb−Free)
BS170RLRP
TO−92 (TO−226)
2000 Tape & Reel
2000 Tape & Reel
BS170RLRPG
TO−92 (TO−226)
(Pb−Free)
BS170RL1
TO−92 (TO−226)
2000 Tape & Reel
2000 Tape & Reel
BS170RL1G
TO−92 (TO−226)
(Pb−Free)
BS170ZL1
TO−92 (TO−226)
2000 Tape & Reel
2000 Tape & Reel
BS170ZL1G
TO−92 (TO−226)
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
V
DS
, DRAI ꢀ
V
TO−SOURCE VOLTAGE (VOLTS)
V
DS
, DRAI ꢀ
TO−SOURCE VOLTAGE (VOLTS)
BS170
RESISTIVE SWITCHING
+25 V
t
on
t
off
V
in
125 W
TO SAMPLING SCOPE
50 W INPUT
V
20 dB
PULSE GENERATOR
90%
out
40 pF
50 W ATTENUATOR
10%
OUTPUT
V
out
50 W
INVERTED
50 W
1.0 MW
90%
50%
10%
V
in
INPUT
PULSE
WIDTH
(V Amplitude 10 Volts)
in
Figure 2. Switching Waveforms
Figure 1. Switching Test Circuit
2.0
1.6
2.0
1.6
1.2
0.8
0.4
V
GS
= 10 V
V
= V
GS
= 1.0 mA
DS
I
D
9.0 V
8.0 V
7.0 V
1.2
0.8
6.0 V
5.0 V
4.0 V
0.4
0
100
T , JUNCTION TEMPERATURE (°C)
150
0
1.0
2.0
3.0
4.0
50
0
50
J
Figure 3. VGS(th) Normalized versus Temperature
Figure 4. On−Region Characteristics
2.0
100
V
GS
= 10 V
9.0 V
8.0 V
V
GS
= 0 V
1.6
1.2
0.8
0.4
80
60
40
20
7.0 V
6.0 V
C
iss
5.0 V
4.0 V
C
oss
C
rss
20
TO−SOURCE VOLTAGE (VOLTS)
0
10
30
40
0
10
20
, DRAI
DS
30
40
50
60
Figure 5. Output Characteristics
Figure 6. Capacitance versus
Drain−To−Source Voltage
http://onsemi.com
3
BS170
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
A
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
SEATING
PLANE
INCHES
DIM MIN MAX
MILLIMETERS
K
MIN
4.45
4.32
3.18
0.407
1.15
2.42
0.39
12.70
6.35
2.04
−−−
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
−−−
0.205
0.210
0.165
0.021
0.055
0.105
0.020
−−−
D
X X
G
J
H
V
K
L
−−−
−−−
C
N
P
R
V
0.105
0.100
−−−
2.66
2.54
−−−
SECTION X−X
0.115
0.135
2.93
3.43
1
N
−−−
−−−
N
STYLE 30:
PIN 1. DRAIN
2. GATE
3. SOURCE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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For additional information, please contact your
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BS170/D
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