BS270-D74Z [ONSEMI]

N 沟道增强模式场效应晶体管 60V，400mA，2Ω;


型号：	BS270-D74Z
厂家：	ONSEMI
描述：	N 沟道增强模式场效应晶体管 60V，400mA，2Ω 晶体管场效应晶体管
文件：	总11页 (文件大小：536K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ON Semiconductor

Is Now

To learn more about onsemi™, please visit our website at

www.onsemi.com

onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or

subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi

product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without

notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,

or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all

liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,

regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/

or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application

by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized

for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for

implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative

Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.

BS270

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

These N-Channel enhancement mode field effect transistors

are produced using ON Semiconductor's proprietary, high

cell density, DMOS technology. These products have been

designed to minimize on-state resistance while provide

rugged, reliable, and fast switching performance. They can

be used in most applications requiring up to 500mA DC.

These products are particularly suited for low voltage, low

current applications such as small servo motor control,

power MOSFET gate drivers, and other switching

applications.

400mA, 60V. R_DS(ON)= 2W @ V_GS= 10V.

High density cell design for low R_DS(ON)

Voltage controlled small signal switch.

Rugged and reliable.

High saturation current capability.

________________________________________________________________________________

Absolute Maximum Ratings

T_A= 25°C unless otherwise noted

Symbol Parameter

BS270

Units

V_DSS

V_DGR

Drain-Source Voltage

Drain-Gate Voltage (R_GS< 1MW)

V_GSS

Gate-Source Voltage - Continuous

±20

±40

- Non Repetitive (tp < 50µs)

I_D

Drain Current - Continuous

- Pulsed

400

2000

625

P_D

Maximum Power Dissipation

Derate Above 25°C

mW/°C

°C

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to 150

300

Maximum Lead Temperature for Soldering

Purposes, 1/16" from Case for 10 Seconds

°C

THERMAL CHARACTERISTICS

Thermal Resistacne, Junction-to-Ambient

200

°C/W

R_q_JA

September-2017, Rev. 2

Publication Order Number:

BS270/D

Electrical Characteristics (T_A= 25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

BV_DSS

I_DSS

Drain-Source Breakdown Voltage

V_GS= 0 V, I_D= 10 µA

V_DS= 60 V, V_GS= 0 V

Zero Gate Voltage Drain Current

µA

T_J= 125^oC

500

Gate - Body Leakage, Forward

Gate - Body Leakage, Reverse

I_GSSF

V_GS= 20 V, V_DS= 0 V

V_GS= -20 V, V_DS= 0 V

-10

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

2.1

1.2

2.5

V_GS(th)

V_DS= V_GS, I_D= 250 µA

V_GS= 10 V, I_D= 500 mA

Static Drain-Source On-Resistance

R_DS(ON)

T_J= 125^oC

3.5

1.8

0.6

0.14

V_GS= 4.5 V, I_D= 75 mA

V_GS= 10 V, I_D= 500 mA

V_GS= 4.5 V, I_D= 75 mA

V_GS= 10 V, V_DS> 2 V_DS(on)

V_GS= 4.5 V, V_DS> 2 V_DS(on)

V_DS> 2 V_DS(on), I_D= 200 mA

V_DS(ON)

I_D(ON)

g_FS

Drain-Source On-Voltage

On-State Drain Current

Forward Transconductance

0.225

2000 2700

400

100

600

320

DYNAMIC CHARACTERISTICS

Input Capacitance

C_iss

C_oss

C_rss

V_DS= 25 V, V_GS= 0 V,

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS (Note 1)

Turn-On Time

Turn-Off Time

t_on

t_off

V_DD= 30 V, I_D= 500 m A,

V_GS= 10 V, R_GEN= 25 W

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

400

2000

1.2

I_S

I_SM

Drain-Source Diode Forward Voltage

0.88

V_SD

V_GS= 0 V, I_S= 400 mA (Note 1)

Note:

1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

www.onsemi.com

Typical Electrical Characteristics

2.5

V_GS=4.0V

V_GS= 10V

9.0

4.5

8.0

5.0

7.0

1.5

6.0

7.0

8.0

5.0

1.5

9.0

0.5

4.0

3.0

0.5

0.4

0.8

1.2

1.6

, DRAIN-SOURCE VOLTAGE (V)

, DRAIN CURRENT (A)

Figure 2. On-Resistance Variation with Gate Voltage

and Drain Current.

Figure 1. On-Region Characteristics.

V_GS= 10V

V _GS= 10V

1.75

1.5

2.5

I_D= 500mA

= 125°C

1.25

1.5

25°C

-55°C

0.75

0.5

-50

-25

100

125

150

0.4

0.8

1.2

1.6

, JUNCTION TEMPERATURE (°C)

, DRAIN CURRENT (A)

Figure 3. On-Resistance Variation

with Temperature.

Figure 4. On-Resistance Variation with Drain

Current and Temperature.

1.6

1.2

0.8

0.4

1.1

= -55°C

V_DS= 10V

25°C

V_DS= V_GS

125°C

1.05

I _D= 1 mA

0.95

0.9

0.85

0.8

-50

-25

100

125

150

, JUNCTION TEMPERATURE (°C)

, GATE TO SOURCE VOLTAGE (V)

Figure 6. Gate Threshold Variation with

Figure 5. Transfer Characteristics.

Temperature.

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Typical Electrical Characteristics (continued)

1.1

I_D= 10µA

V_GS= 0V

1.075

1.05

1.025

0.5

= 125°C

0.1

25°C

0.05

-55°C

0.01

0.975

0.95

0.925

0.005

0.001

-50

-25

100

125

150

0.2

0.4

0.6

0.8

1.2

1.4

, JUNCTION TEMPERATURE (°C)

, BODY DIODE FORWARD VOLTAGE (V)

Figure 8. Body Diode Forward Voltage Variation with

Current and Temperature.

Figure 7. Breakdown Voltage Variation

with Temperature.

V_DS= 25V

I_D=500mA

iss

oss

rss

f = 1 MHz

V_GS= 0V

0.4

0.8

1.2

1.6

, DRAIN TO SOURCE VOLTAGE (V)

, GATE CHARGE (nC)

Figure 9. Capacitance Characteristics.

Figure 10. Gate Charge Characteristics.

t_on

t_off

V_DD

t_d(off)

t_f

t _d(on)

90%

R_L

V_IN

V_OUT

Output, V

Input, V

out

10%

90%

10%

V_GS

Inverted

R_GEN

DUT

50%

10%

Pulse Width

Figure 11. Switching Test Circuit.

Figure 12. Switching Waveforms.

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Typical Electrical Characteristics (continued)

0.5

0.1

0.05

V _GS= 10V

SINGLE PULSE

T_A= 25°C

0.01

0.005

60 80

, DRAIN-SOURCE VOLTAGE (V)

Figure 13. Maximum Safe Operating

Area.

D = 0.5

0.2

0.5

(t) = r(t) * R

qJA

= (See Datasheet)

0.2

0.1

qJA

0.1

P(pk)

0.05

t₁

0.05

t ₂

0.02

- T = P * R

(t)

0.01

Single Pulse

0.02

0.01

Duty Cycle, D = t₁/t₂

0.0001

0.001

0.01

0.1

100

300

t , TIME (sec)

Figure 14. Transient Thermal Response Curve.

www.onsemi.com

TO-92 Tape and Reel Data

TO-92 Packaging

Configuration: Figure 1.0

TAPE and REEL OPTION

See Fig 2.0 for various

Reeling Styles

FSCINT Label sample

ON SEMICONDUCTOR CORPORATION LOT:

HTB:B

QTY:

10000

CBVK741B019

NSID:

SPEC:

PN2222N

FSCINT

Label

D/C1:

SPEC REV:

QA REV:

D9842

5 Reels per

Intermediate Box

(FSCINT)

Customized

Label

F63TNR Label sample

LOT: CBVK741B019

F63TNR

Label

QTY: 2000

SPEC:

FSID: PN222N

Customized

Label

D/C1: D9842

D/C2:

QTY1:

QTY2:

SPEC REV:

CPN:

N/F: F

(F63TNR)3

375mm x 267mm x 375mm

Intermediate Box

TO-92 TNR/AMMO PACKING INFROMATION

AMMO PACK OPTION

See Fig 3.0 for 2 Ammo

Pack Options

Packing

Style

Quantity

2,000

EOL code

D26Z

Reel

2,000

D27Z

Ammo

2,000

D74Z

2,000

D75Z

FSCINT

Label

Unit weight

Reel weight with components

Ammo weight with components = 1.02 kg

= 0.22 gm

= 1.04 kg

Max quantity per intermediate box = 10,000 units

5 Ammo boxes per

Intermediate Box

327mm x 158mm x 135mm

Immediate Box

Customized

Label

F63TNR

Label

Customized

Label

333mm x 231mm x 183mm

Intermediate Box

(TO-92) BULK PACKING INFORMATION

BULK OPTION

See Bulk Packing

Information table

EOL

CODE

LEADCLIP

DESCRIPTION

QUANTITY

2.0 K / BOX

1.5 K / BOX

2.0 K / BOX

DIMENSION

J18Z

TO-18 OPTION STD

TO-5 OPTION STD

NO LEAD CLIP

Anti-static

Bubble Sheets

J05Z

NO LEAD CLIP

NO LEADCLIP

FSCINT Label

NO EOL

CODE

TO-92 STANDARD

STRAIGHT FOR: PKG 92,

94 (NON PROELECTRON

SERIES), 96

L34Z

TO-92 STANDARD

STRAIGHT FOR: PKG 94

NO LEADCLIP

2.0 K / BOX

(PROELECTRON SERIES

2000 units per

EO70 box for

std option

114mm x 102mm x 51mm

Immediate Box

BCXXX, BFXXX, BSRXXX),

97, 98

5 EO70 boxes per

intermediate Box

530mm x 130mm x 83mm

Intermediate box

Customized

Label

FSCINT Label

10,000 units maximum

per intermediate box

for std option

www.onsemi.com

TO-92 Tape and Reel Data, continued

TO-92 Reeling Style

Configuration: Figure 2.0

Machine Option “A” (H)

Machine Option “E” (J)

Style “A”, D26Z, D70Z (s/h)

Style “E”, D27Z, D71Z (s/h)

TO-92 Radial Ammo Packaging

Configuration: Figure 3.0

FIRST WIRE OFF IS COLLECTOR

ADHESIVE TAPE IS ON THE TOP SIDE

FLAT OF TRANSISTOR IS ON TOP

FIRST WIRE OFF IS EMITTER

ADHESIVE TAPE IS ON THE TOP SIDE

FLAT OF TRANSISTOR IS ON BOTTOM

ORDER STYLE

D74Z (M)

ORDER STYLE

D75Z (P)

FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)

ADHESIVE TAPE IS ON BOTTOM SIDE

FLAT OF TRANSISTOR IS ON TOP

FIRST WIRE OFF IS EMITTER (ON PKG. 92)

ADHESIVE TAPE IS ON BOTTOM SIDE

FLAT OF TRANSISTOR IS ON BOTTOM

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TO-92 Tape and Reel Data, continued

TO-92 Tape and Reel Taping

Dimension Configuration: Figure 4.0

P1 F1

ITEM DESCRIPTION

SYMBOL

DIMENSION

0.098 (max)

Base of Package to Lead Bend

Component Height

0.928 (+/- 0.025)

0.630 (+/- 0.020)

0.748 (+/- 0.020)

0.040 (max)

User Direction of Feed

Lead Clinch Height

Component Base Height

Component Alignment ( side/side )

Component Alignment ( front/back )

Component Pitch

0.031 (max)

0.500 (+/- 0.020)

0.500 (+/- 0.008)

0.150 (+0.009, -0.010)

0.247 (+/- 0.007)

0.104 (+/- 0 .010)

0.018 (+0.002, -0.003)

0.429 (max)

F1/F2

Feed Hole Pitch

Hole Center to First Lead

Hole Center to Component Center

Lead Spread

Lead Thickness

Cut Lead Length

0.209 (+0.051, -0.052)

0.032 (+/- 0.006)

0.021 (+/- 0.006)

0.708 (+0.020, -0.019)

0.236 (+/- 0.012)

0.035 (max)

Taped Lead Length

Taped Lead Thickness

Carrier Tape Thickness

Carrier Tape Width

TO-92 Reel

Configuration: Figure 5.0

Hold - down Tape Width

Hold - down Tape position

Feed Hole Position

0.360 (+/- 0.025)

0.157 (+0.008, -0.007)

0.004 (max)

Sprocket Hole Diameter

Lead Spring Out

Note : All dimensions are in inches.

ELECTROSTATIC

SENSITIVE DEVICES

ITEM DESCRIPTION

SYSMBOL MINIMUM

MAXIMUM

Reel Diameter

13.975

1.160

0.650

3.100

2.700

0.370

1.630

14.025

1.200

0.700

3.300

3.100

0.570

1.690

2.090

F63TNR Label

Arbor Hole Diameter (Standard)

(Small Hole)

Customized Label

Core Diameter

Hub Recess Inner Diameter

Hub Recess Depth

Flange to Flange Inner Width

Hub to Hub Center Width

Note: All dimensions are inches

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TO-92 Package Dimensions

TO-92; TO-18 Reverse Lead Form (J35Z Option)

(FS PKG Code 92, 94, 96)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

inches [millimeters]

Part Weight per unit (gram): 0.22

;

Note: All package 97 or 98 transistors are leadformed

to this configuration prior to bulk shipment. Order

L34Z option if in-line leads are preferred on package

97 or 98.

* Standard Option on 97 & 98 package code

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ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

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❖

BS270-D74Z [ONSEMI]

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