BSR14 [ONSEMI]
NPN 通用放大器;
| 型号： | BSR14 |
| 厂家： | 
ONSEMI |
| 描述： | NPN 通用放大器 放大器 开关 晶体管 |
| 文件： | 总5页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
September 2012
BSR14
NPN General Purpose Amplifier
Features
• This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA.
• Sourced from Process 19.
• See BCW65C for characteristics.
C
E
SOT-23
B
Mark:U8
Absolute Maximum Ratings* Ta = 25C unless otherwise noted
Symbol
VCEO
VCBO
VEBO
IC
Parameter
Collector-Emitter Voltage
Value
Units
V
40
75
Collector-Base Voltage
V
Emitter-Base Voltage
6.0
V
Collector Current - Continuous
Operating and Storage Junction Temperature Range
800
mA
C
TJ, Tstg
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta = 25C unless otherwise noted
Max.
Symbol
Parameter
Total Device Dissipation
Units
*BSR14
PD
350
2.8
mW
mW/C
Derate above 25C
RJA
Thermal Resistance, Junction to Ambient
357
C/W
* Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
© 2012 Fairchild Semiconductor Corporation
www.fairchildsemi.com
BSR14 Rev. B0
1
Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Max.
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage IC = 10A, IB = 0
40
75
V
V
V
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Cutoff Current
IC = 10A, IE = 0
IE = 10A, IC = 0
6.0
VCB = 60V,
10
10
nA
A
VCB = 60V, Ta = 150°C
ICEX
IBEX
IEBO
Collector-Cutoff Current
Reverse Base Current
Emitter-Cutoff Current
VCE = 60V, VEB = 3.0V
VCE = 60V, VEB = 3.0V
VEB = 3.0V, IC = 0
10
20
15
nA
nA
nA
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 0.1mA, VCE = 10V
IC = 1.0mA, VCE = 10V
IC = 10mA, VCE = 10V
IC = 150mA, VCE = 10V
IC = 150mA, VCE = 1.0V
IC = 500mA, VCE = 10V
35
50
75
100
50
40
300
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
0.3
1.0
V
V
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
0.6
1.2
2.0
V
V
SMALL SIGNAL CHARACTERISTICS
fT
CCB
hie
Current Gain - Bandwidth Product
IC = 20mA, VCE = 20V,
f = 100mHz
300
MHz
pF
Collector-Base Capacitance
Input Impedance
VCB = 10V, IE = 0,
f = 1.0MHz
8.0
8.0
300
35
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
2.0
50
5
k
hfe
Small-Signal Current Gain
Output Admittance
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
hoe
VCE = 10V, IC = 1.0mA,
f = 1.0kHz
S
SWITCHING CHARACTERISTICS
td
tr
Delay Time
Rise Time
VCC = 30V, VBE(OFF)
0.5V, IC = 150mA,
IB1 = 15mA
=
10
25
ns
ns
ts
tf
Storage Time
Fall Time
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
225
60
ns
ns
Spice Model
NPN (Is=14.34f Xti=3 Eg=1.11 Vaf=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6 Vtf=1.7
Xtf=3 Rb=10)
© 2012 Fairchild Semiconductor Corporation
BSR14 Rev. B0
www.fairchildsemi.com
2
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Obsolete
First Production
Full Production
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Rev. I62
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www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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