BSS123-F169 [ONSEMI]
N沟道逻辑电平增强型场效应晶体管100V，170mA，6Ω;
| 型号： | BSS123-F169 |
| 厂家： | 
ONSEMI |
| 描述： | N沟道逻辑电平增强型场效应晶体管100V，170mA，6Ω 晶体管 场效应晶体管 |
| 文件： | 总8页 (文件大小：244K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
D
S
N-Channel Logic Level
Enhancement Mode Field
Effect Transistor
G
BSS123
General Description
These N−Channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS
technology. These products have been designed to minimize on−state
resistance while provide rugged, reliable, and fast switching
performance. These products are particularly suited for low voltage,
low current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
SOT−23−3
CASE 318−08
MARKING DIAGRAM
3
Features
Drain
• 0.17 A, 100 V
♦ R
♦ R
= 6 ꢀ @ V = 10 V
SAMG
DS(on)
GS
G
= 10 ꢀ @ V = 4.5 V
DS(on)
GS
• High Density Cell Design for Extremely Low R
• Rugged and Reliable
DS(on)
1
Gate
2
Source
• Compact Industry Standard SOT−23 Surface Mount Package
• This Device is Pb−Free and Halogen Free
SA
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
ORDERING INFORMATION
†
Device
BSS123,
Package
Shipping
SOT−23−3
(Pb−Free)
3000 /
BSS123−G
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
November, 2021 − Rev. 10
BSS123/D
BSS123
ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted.
A
Symbol
Parameter
Ratings
100
Unit
V
DSS
GSS
Drain−Source Voltage
Gate−Source Voltage
V
V
20
I
D
Drain Current – Continuous (Note 1)
Drain Current – Pulsed (Note 1)
0.17
A
0.68
P
Maximum Power Dissipation (Note 1)
Derate Above 25°C
0.36
W
mW/°C
°C
D
2.8
T , T
Operating and Storage Junction Temperature Range
−55 to +150
300
J
STG
T
Maximum Lead Temperature for Soldering Purposes, 1/16” from Case
for 10 s
L
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS T = 25°C unless otherwise noted.
A
Symbol
Parameter
Ratings
Unit
R
Thermal Resistance, Junction−to−Ambient (Note 1)
350
°C/W
ꢁ
JA
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted.
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
V
= 0 V, I = 250 ꢂ A
100
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA, Referenced to
−
97
mV/°C
ꢃ BVDSS
ꢃ TJ
25°C
I
Zero Gate Voltage Drain Current
V
V
= 100 V, V = 0 V
−
−
−
−
1
ꢂ A
DSS
DS
GS
= 100 V, V = 0 V,
60
DS
GS
T = 125°C
J
V
DS
V
GS
= 20 V, V = 0 V
−
−
−
−
10
50
nA
nA
GS
I
Gate–Body Leakage
= 20 V, V = 0 V
DS
GSS
ON CHARACTERISTICS (Note 2)
V
Gate Threshold Voltage
V
I
= V , I = 1 mA
0.8
1.7
2
V
GS(th)
DS
GS D
Gate Threshold Voltage Temperature
Coefficient
= 1 mA, Referenced to 25°C
−
–2.7
−
mV/°C
ꢃ VGS(th)
ꢃ TJ
D
R
Static Drain–Source On–Resistance
V
V
V
= 10 V, I = 0.17 A
−
−
−
1.2
1.3
2.2
6
ꢀ
DS(on)
GS
GS
GS
D
= 4.5 V, I = 0.17 A
10
12
D
= 10 V, I = 0.17 A,
D
T = 125°C
J
I
On–State Drain Current
V
GS
V
DS
= 10 V, V = 5 V
0.68
0.08
−
−
−
A
S
D(on)
DS
g
FS
Forward Transconductance
= 10 V, I = 0.17 A
0.8
D
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 25 V, V = 0 V,
−
−
−
−
73
7
−
−
−
−
pF
iss
DS
GS
f = 1.0 MHz
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
3.4
2.2
rss
R
V
GS
= 15 mV, f = 1.0 MHz
ꢀ
G
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2
BSS123
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted. (continued)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 2)
t
t
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
V
= 30 V, I = 0.28 A,
−
−
−
−
−
−
−
1.7
9
3.4
18
31
5
ns
d(on)
DD
GS
D
= 10 V, R
= 6 ꢀ
GEN
t
r
17
d(off)
t
f
2.4
1.8
0.2
0.3
Q
V
DS
V
GS
= 30 V, I = 0.22 A,
2.5
−
nC
g
D
= 10 V
Q
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain–Source Diode Forward Current
I
S
−
−
−
−
−
0.8
11
3
0.17
1.3
−
A
V
V
SD
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V = 0 V, I = 0.44 A (Note 2)
GS S
t
rr
I = 0.17 A, d /d = 100 A/ꢂ s
ns
nC
F
if
t
Q
−
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
ꢁ
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
ꢁ
ꢁ
JA
JA
a) 350°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 ꢂ s, Duty Cycle ≤ 2.0%
TYPICAL CHARACTERISTICS
1.0
0.8
1.6
1.5
V
= 10 V
GS
3.5 V
3.0 V
6.0 V
4.5 V
V
GS
= 2.5 V
1.4
2.5 V
0.6
0.4
0.2
0
1.3
1.2
1.1
3.0 V
3.5 V
4.0 V
10 V
1.0
2.0 V
4.5 V 6.0 V
0.8
0.9
0
1
2
3
4
5
0
0.2
0.4
0.6
1
I , Drain Current (A)
D
V
DS
, Drain To Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation with Drain
Current and Gate Voltage
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3
BSS123
TYPICAL CHARACTERISTICS (continued)
2.2
2.0
3.4
3.0
I
= 0.08 A
D
I
V
= 170 mA
D
= 10 V
GS
1.8
1.6
2.6
2.2
T = 125°C
A
1.4
1.2
1.0
1.8
1.4
1.0
0.8
0.6
0.4
T = 25°C
A
−50
−25
0
25
50
75
100 125
150
0
2
4
6
8
10
T , Junction Temperature (5C)
J
V
GS
, Gate To Source Voltage (V)
Figure 3. On−Resistance Variation with Temperature
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
1.0
1
V
DS
= 10 V
V
GS
= 0 V
0.8
0.6
0.4
0.1
T = 125°C
A
0.01
0.001
25°C
T = 125°C
A
0.2
0
−55°C
−55°C
25°C
0.0001
1
1.5
2
2.5
3
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
, Gate To Source Voltage (V)
V
SD
, Body Diode Forward Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
10
100
f = 1 MHz
I
D
= 0.17 A
V
DS
= 30 V
V
GS
= 0 V
80
60
40
8
6
50 V
C
iss
70 V
4
2
C
rss
20
0
C
oss
0
0
0.4
0.8
1.2
1.6
2
0
20
40
60
80
100
Q , Gate Charge (nC)
g
V
SD
, Drain To Source Voltage (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
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4
BSS123
TYPICAL CHARACTERISTICS (continued)
1
5
Single Pulse
100 ꢂ s
R
Limit
DS(on)
R
= 350°C/W
ꢁ
JA
1 ms
T = 25°C
A
4
0.1
10 ms
3
2
100 ms
0.01
1 s
10 s
DC
V
= 10 V
GS
Single Pulse
1
0
R
= 350°C/W
ꢁ
JA
T = 25°C
A
0.001
1
10
100
1000
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain−Source Voltage (V)
t
(s)
1, Time
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum Power Dissipation
1
D = 0.5
0.2
0.1
0.1
0.01
R
R
(t)= r(t) * R
ꢁ
JA JA
ꢁ
0.05
350°C/W
ꢁ
JA =
0.02
0.01
P(pk)
t
1
t
2
Single Pulse
0.001
T − T = P * R (t)
ꢁ
JA
J
A
Duty Cycle, D = t / t
1
2
0.001
1000
0.0001
0.01
0.1
1
10
100
t
(s)
1, Time
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
SCALE 4:1
GENERIC
MARKING DIAGRAM*
XXXMG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1. EMITTER
2. BASE
STYLE 8:
PIN 1. BASE
PIN 1. ANODE
2. EMITTER
3. COLLECTOR
2. NO CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
STYLE 10:
STYLE 11:
PIN 1. ANODE
2. CATHODE
STYLE 12:
STYLE 13:
PIN 1. SOURCE
2. DRAIN
STYLE 14:
PIN 1. CATHODE
2. GATE
PIN 1. DRAIN
2. SOURCE
3. GATE
PIN 1. CATHODE
2. CATHODE
3. ANODE
3. CATHODE
3. CATHODE−ANODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. CATHODE
2. ANODE
PIN 1. GATE
2. CATHODE
3. ANODE
PIN 1. ANODE
2. CATHODE
3. CATHODE
PIN 1. NO CONNECTION PIN 1. CATHODE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE−ANODE
3. CATHODE
3. GATE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1. ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1. GATE
2. SOURCE
3. DRAIN
PIN 1. RETURN
2. OUTPUT
3. INPUT
PIN 1. GATE
2. DRAIN
PIN 1. ANODE
2. CATHODE
3. GATE
PIN 1. CATHODE
2. ANODE
3. SOURCE
3. NO CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
PIN 1. ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
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For additional information, please contact your local Sales Representative at
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