BSS123L [ONSEMI]
功率 MOSFET 170 mA，100 V，N 沟道 SOT-23;
| 型号： | BSS123L |
| 厂家： | 
ONSEMI |
| 描述： | 功率 MOSFET 170 mA，100 V，N 沟道 SOT-23 PC 开关 光电二极管 晶体管 |
| 文件： | 总8页 (文件大小：1734K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
N-Channel Logic Level
Enhancement Mode Field
Effect Transistor
D
S
G
BSS123L
N−Channel
Description
This N−channel enhancement mode field effect transistor is
produced using high cell density, trench MOSFET technology. This
product minimizes on−state resistance while providing rugged,
reliable and fast switching performance. This product is particularly
suited for low−voltage, low−current applications such as small servo
motor control, power MOSFET gate drivers, logic level transistor,
high speed line drivers, power management/power supply
and switching applications.
SOT−23−3
CASE 318−08
MARKING DIAGRAM
3
Features
Drain
• 0.17 A, 100 V
♦ R
♦ R
= 6 ꢀ @ V = 10 V
DS(on)
GS
SB MG
= 10 ꢀ @ V = 4.5 V
G
DS(on)
GS
• High Density Cell Design for Low R
• Rugged and Reliable
DS(ON)
1
Gate
2
Source
• Compact Industry Standard SOT−23 Surface Mount Package
• Very Low Capacitance
SB
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
• Fast Switching Speed
• This Device is Pb−Free and Halogen Free
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
ORDERING INFORMATION
†
Device
Package
Shipping
BSS123L
SOT−23−3
(Pb−Free)
3000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2021 − Rev. 2
BSS123L/D
BSS123L
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Value
100
Unit
V
V
DSS
GSS
Drain−Source Voltage
Gate−Source Voltage
V
20
V
I
D
Maximum Drain Current – Continuous
Maximum Drain Current – Pulsed
0.17
A
0.68
T , T
Operating and Storage Temperature Range
−55 to +150
300
°C
°C
J
STG
T
L
Maximum Lead Temperature for Soldering Purposes,
1/16” from Case for 10 s
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Maximum Power Dissipation (Note 1)
Value
0.36
2.8
Unit
W
PD
Derate Above 25°C
mW/°C
°C/W
R
Thermal Resistance, Junction−to−Ambient (Note 1)
380
ꢁ
JA
ESD RATING (Note 2)
Symbol
Parameter
Value
50
Unit
V
HBM
CDM
Human Body Model per ANSI/ESDA/JEDEC JS−001−2012
Charged Device Model per JEDEC C101C
>2000
V
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
BV
Drain–Source Breakdown Voltage
V
= 0 V, I = 250 ꢂ A
100
103
100
−
−
V
DSS
GS
D
Breakdown Voltage Temperature
Coefficient
I
D
= 250 μA,
−
mV/°C
ꢃ BVDSS
ꢃ TJ
Referenced to 25°C
I
Zero Gate Voltage Drain Current
V
V
= 100 V, V = 0 V
−
−
0.027
0.159
1
ꢂ
A
DSS
DS
GS
= 100 V, V = 0 V,
60
DS
GS
T = 125°C
J
V
DS
V
GS
V
GS
= 20 V, V = 0 V
−
−
−
0.07
0.036
−0.019
10
50
nA
nA
nA
GS
I
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
= 20 V, V = 0 V
DS
GSSF
I
= −20 V, V = 0 V
−50
GSSR
DS
ON CHARACTERISTICS (Note 3)
V
Gate Threshold Voltage
V
I
= V , I = 1 mA
0.8
1.405
–2.82
2
V
GS(th)
DS
GS D
Gate Threshold Voltage Temperature
Coefficient
= 1 mA,
Referenced to 25°C
−
−
mV/°C
ꢃ VGS(th)
ꢃ TJ
D
R
Static Drain–Source On–Resistance
V
V
V
= 10 V, I = 0.17 A
−
−
−
2.98
3.17
5.63
6
ꢀ
DS(on)
GS
GS
GS
D
= 4.5 V, I = 0.17 A
10
12
D
= 10 V, I = 0.17 A,
D
T = 125°C
J
I
On–State Drain Current
V
GS
V
DS
= 10 V, V = 5 V
0.680
0.08
0.735
2.13
−
−
A
S
D(ON)
DS
g
FS
Forward Transconductance
= 10 V, I = 0.17 A
D
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2
BSS123L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (continued)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
C
Input Capacitance
V
= 25 V, V = 0 V,
−
−
−
−
21.5
3.52
1.67
7.18
−
−
−
−
pF
iss
DS
GS
f = 1.0 MHz
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
V
GS
= 15 mV, f = 1.0 MHz
ꢀ
G
SWITCHING CHARACTERISTICS (Note 3)
t
Turn–On Delay
V
V
= 30 V, I = 0.28 A,
−
−
−
−
−
−
−
2.2
1.7
3.4
18
31
5
ns
d(on)
DD
GS
D
= 10 V, R
= 6 ꢀ
GEN
t
r
Turn–On Rise Time
Turn–Off Delay
t
5.9
d(off)
t
f
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
5.6
Q
V
DS
V
GS
= 30 V, I = 0.22 A,
0.793
0.092
0.171
2.5
−
nC
V
g
D
= 10 V
Q
gs
gd
Q
−
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
V
Drain–Source Diode Forward Voltage
V
GS
= 0 V, I = 440 mA
−
0.867
1.3
SD
S
(Note 1)
T
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
I = 0.2 A, d /d = 100 A/ꢂ s
−
−
11.9
1.3
−
−
ns
rr
F
if
t
Q
nC
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. R
is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder
ꢁ
JA
mounting surface of the drain pins. R
is guaranteed by design while R
is determined by the user’s board design.
ꢁ
ꢁ
JC
CA
a) 380°C/W when mounted on a minimum pad.
2. ESD values are in typical, no over−voltage rating is implied, ESD CDM zap voltage is 2000 V maximum.
3. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ 2.0%.
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3
BSS123L
TYPICAL CHARACTERISTICS
1.0
0.9
0.8
2.8
2.3
1.8
0.7
0.6
0.5
0.4
0.3
0.2
1.3
0.8
0.1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1
0
0.2
0.4
0.6
0.8
I , Drain Current (A)
D
V
DS
, Drain−Source Voltage (V)
Figure 2. On−Resistance Variation with Gate
Figure 1. On−Region Characteristics
Voltage and Drain Current
8
2.5
2
7
6
5
4
1.5
3
2
1
1
0
0.5
−75 −50
0
2
4
6
8
10
−25
0
25
50
75 100 125 150
V
GS
, Gate To Source Voltage (V)
T , Junction Temperature (°C)
J
Figure 4. On−Resistance Variation
with Gate−to−Source Voltage
Figure 3. On−Resistance Variation with Temperature
1.0
0.8
0.6
0.4
1
0.1
0.01
0.001
0.2
0
0.0001
1.2
1
3
4
0.2
0.4
V
0.6
0.8
1.0
0
2
, Body Diode Forward Voltage (V)
V
GS
, Gate To Source Voltage (V)
SD
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
Figure 5. Transfer Characteristics
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4
BSS123L
TYPICAL CHARACTERISTICS (continued)
10
8
100
10
1
6
4
2
0
1
100
0.1
10
0
0.5
1
1.5
2
V
SD
, Drain To Source Voltage (V)
Q , Gate Charge (nC)
g
Figure 8. Capacitance Characteristics
Figure 7. Gate Charge Characteristics
1
100
10
0.1
0.01
1
0.001
0.1
0.0001 0.001
100 300
0.01
0.1
V
1
10
0.01
0.1
t Time (s)
10
100
1000
1
, Drain−Source Voltage (V)
,
DS
Figure 10. Single Pulse Maximum Power
Dissipation
Figure 9. Maximum Safe Operating Area
10
1
0.1
0.01
0.0001
0.001
0.01
0.1
t, Rectangular Pulse Duration (s)
10
100
1000
1
Figure 11. Transient Thermal Response Curve
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
SCALE 4:1
GENERIC
MARKING DIAGRAM*
XXXMG
G
1
XXX = Specific Device Code
M
= Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
STYLE 7:
PIN 1. EMITTER
2. BASE
STYLE 8:
PIN 1. BASE
PIN 1. ANODE
2. EMITTER
3. COLLECTOR
2. NO CONNECTION
3. CATHODE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
STYLE 10:
STYLE 11:
PIN 1. ANODE
2. CATHODE
STYLE 12:
STYLE 13:
PIN 1. SOURCE
2. DRAIN
STYLE 14:
PIN 1. CATHODE
2. GATE
PIN 1. DRAIN
2. SOURCE
3. GATE
PIN 1. CATHODE
2. CATHODE
3. ANODE
3. CATHODE
3. CATHODE−ANODE
3. GATE
3. ANODE
STYLE 15:
STYLE 16:
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. CATHODE
2. ANODE
PIN 1. GATE
2. CATHODE
3. ANODE
PIN 1. ANODE
2. CATHODE
3. CATHODE
PIN 1. NO CONNECTION PIN 1. CATHODE
2. CATHODE
3. ANODE
2. ANODE
3. CATHODE−ANODE
3. CATHODE
3. GATE
STYLE 21:
STYLE 22:
STYLE 23:
PIN 1. ANODE
2. ANODE
STYLE 24:
STYLE 25:
STYLE 26:
PIN 1. GATE
2. SOURCE
3. DRAIN
PIN 1. RETURN
2. OUTPUT
3. INPUT
PIN 1. GATE
2. DRAIN
PIN 1. ANODE
2. CATHODE
3. GATE
PIN 1. CATHODE
2. ANODE
3. SOURCE
3. NO CONNECTION
3. CATHODE
STYLE 27:
STYLE 28:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
PIN 1. ANODE
2. ANODE
3. ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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