BSS138W [ONSEMI]
N 沟道逻辑电平增强型场效应晶体管 50V，210mA，3.5Ω;
| 型号： | BSS138W |
| 厂家： | 
ONSEMI |
| 描述： | N 沟道逻辑电平增强型场效应晶体管 50V，210mA，3.5Ω 开关 光电二极管 晶体管 场效应晶体管 |
| 文件： | 总6页 (文件大小：250K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
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N-Channel Logic Level
Enhancement Mode Field
Effect Transistor
SOT−323, 3 Lead, 1.25X2
CASE 419AB
BSS138W
Description
D
These N−Channel Enhancement Mode Field Effect Transistor.
These products have been Designed to minimize on−state resistance
while provide rugged, reliable, and fast switching performance.
These products are particularly suited for low voltage, low current
applications such as small servo motor control, power MOSFET gate
drivers, and other switching applications.
S
G
MARKING DIAGRAM
Features
• R
= 3.5 W @ V = 10 V, I = 0.22 A
GS D
= 6.0 W @ V = 4.5 V, I = 0.22 A
GS D
DS(on)
R
DS(on)
• High Density Cell Design For Extremely Low R
• Rugged and Reliable
DS(on)
Y
A138
• Compact Industry Standard SOT−323 Surface Mount Package
• These Devices are Pb−Free and Halide Free
Y
A
138
= Year
= Assembly Plant Code
= Specific Device Code
ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted
A
Symbol
Parameter
Drain to Source Voltage
Gate to Source Voltage
Value
50
Unit
V
V
DSS
V
GSS
20
V
ORDERING INFORMATION
I
D
A
A
Drain Current
†
− Continuous (Note 1)
0.21
0.84
Device
Shipping
3000 /
Tape & Reel
Package
− Pulsed
BSS138W
SOT−323
(Pb−Free)
T , T
°C
°C
Operating and Storage Junction
Temperature Range
−55 to +150
J
STG
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
T
L
Maximum Lead Temperature for
Soldering Purposes, 1/16” from
Case for 10 Seconds
300
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
June, 2022 − Rev 2
BSS138W/D
BSS138W
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
P
D
Maximum Power Dissipation Derate Above 25°C (Note 1)
340
2.72
mW
mW/°C
R
Thermal Resistance, Junction to Ambient (Note 1)
367
°C/W
θ
JA
ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BV
Drain to Source Breakdown Voltage
V
I
= 0 V, I = 250 mA
50
−
−
−
V
DSS
GS
D
Breakdown Voltage Temperature Coeffi-
cient
= 250 mA, Referenced to 25°C
−
71
mV/°C
DBVDSS(th)
DTJ
D
I
Zero Gate Voltage Drain Current
V
V
V
= 50 V, V = 0 V
−
−
−
−
0.5
5
mA
mA
nA
DSS
DS
DS
DS
GS
= 50 V, V = 0 V, T = 125°C
GS
J
= 30 V, V = 0 V
100
GS
I
Gate−Body Leakage
V
GS
=
20 V, V = 0 V
100
nA
GSS
DS
On Characteristics (Note2)
V
GS(th)
Gate to Threshold Voltage
V
DS
= V , I = 1mA
0.8
1.3
1.5
V
GS D
Gate to Threshold Voltage
Temperature Coefficient
I = 1 mA, Referenced to 25°C
D
−
−3.9
−
mV/°C
DVGS(th)
DTJ
R
Static Drain−Source On−Resistance
V
GS
V
GS
V
GS
= 10 V, I = 0.22 A
−
1.17
1.36
2.16
3.5
6.0
5.8
W
W
W
DS(on)
D
= 4.5 V, I = 0.22 A
D
= 10 V, I = 0.22 A, T = 125°C
D
J
I
On−State Drain Current
V
= 10 V, V = 5 V
0.2
−
−
A
S
D(on)
GS
DS
DS
g
FS
Forward Transconductance
V
= 10 V, I = 0.22 A
0.12
D
Dynamic Characteristics
C
Input Capacitance
V
= 25 V, V = 0 V, f = 1.0 MHz
−
−
−
−
38
5.9
3.5
11
−
−
−
−
pF
pF
pF
W
iss
DS
GS
GS
C
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
oss
C
rss
R
V
= 15 mV, f = 1.0 MHz
g
Switching Characteristics
t
Turn−On Delay Time
Turn−On Rise Time
Turn−Off Delay Time
Turn−Off Fall Time
Total Gate Change
Gate−Source Change
Gate−Drain Change
V
V
= 30 V, I = 0.29 A,
−
−
−
−
−
−
−
2.3
1.9
5
18
36
14
−
ns
ns
d(on)
DD
GS
D
= 10 V, R
= 6 Ω
GEN
t
r
t
6.7
ns
d(off)
t
f
6.5
ns
Q
V
DS
V
GS
= 25 V, I = 0.22 A,
1.1
nC
nC
nC
g
D
= 10 V
Q
0.12
0.22
−
gs
gd
Q
−
Drain−Source Diode Characteristics
Maximum Continuous Drain–Source Diode Forward Current
Drain−Source Diode Forward Voltage = 0 V, I = 0 44 A (Note 2)
I
−
−
−
−
0.22
1.4
A
V
S
V
SD
V
GS
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. 367°C/W When Mounted on a minimum pad.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
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2
BSS138W
TYPICAL CHARACTERISTICS
2.0
1.5
1.0
0.5
0.0
3.5
3.0
V
GS
= 10 V
6 V
2.5
2.0
4.5 V
4.5 V
4 V
3.5 V
3 V
3.5 V
V
GS
= 2 5 V
3 V
1.5
1.0
2.5 V
2 V
6 V
10 V
0.5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.2
0.4
0.6
0.8
1.0
I , DRAIN−SOURCE CURRENT (A)
D
V
DS
, DRAIN−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. On−Resistance Variation With
Drain Current and Gate Voltage
4.0
3.5
2.5
I
D
= 110 mA
V
= 10 V
= 220 mA
GS
I
D
3.0
2.5
2.0
1.5
T = 25°C
A
2.0
1.5
1.0
0.5
0.0
T = 25°C
A
1.0
0.5
100
150
−50
0
50
0
2
4
6
8
10
V
GS
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (5C)
J
Figure 4. On−Resistance Variation with
Gate−to−Source Voltage
Figure 3. On−Resistance Variation with
Temperature.
1000
2.0
V
GS
= 0 V
V
GS
= 10 V
1.6
1.2
0.8
0.4
0.0
T = 125°C
T = 150°C
A
100
10
A
T = 25°C
A
T = 25°C
A
1
T = − 55°C
A
T = − 55(°C)
A
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
I
D,
DRAIN CURRENT (A)
Figure 6. Body Diode Forward Voltage Variation with
Source Current and Temperature
Figure 5. Drain−Source On Voltage with
Temperature.
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3
BSS138W
TYPICAL CHARACTERISTICS (continued)
100
10
8
I
D
= 220 mA
f = 1 MHz
V
GS
= 0 V
80
60
V
DS
= 8 V
6
V
DS
= 25 V
C
ISS
V
DS
= 30 V
4
40
20
C
OSS
2
C
RSS
0
0.0
0
0.1
10
20
30
40
50
0.2
0.4
0.6
0.8
1.0
1.2
V
DS
, VOLTAGE BIAS (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance Characteristics
1
0
5
10
SINGLE PULSE
RTHJA = 367°C/W
10
T = 25°C
A
4
3
2
1
0
100 ms
1 ms
10 ms
100 ms
1 s
−1
−2
10
10
10
DC
LIMIT
R
DS(ON)
V
= 10 V
GS
SINGLE PULSE
RTHJA = 367°C/W
T = 25°C
A
−3
−1
0
1
2
10
10
10
10
1
1 E−3
0.01
0.1
100
t1, TIME (s)
V
DS
, DRAIN − SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
Figure 10. Single Pulse Maximum
Power Dissipation
1
50%
RTHJA (t) = r (t) *RTHJA
RTHJA = 367°C/W
30%
10%
0.1
5%
2%
D = 1%
SINGLE PULSE
0.01
1 E−4 1 E−3 0.01
01
1
10
100
1000
t1, TIME (s)
Figure 11. Transient Thermal Response Curve
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−70, 3 Lead, 1.25x2
CASE 419AB
ISSUE A
DATE 13 FEB 2023
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON34256E
SC−70, 3 LEAD, 1.25X2
PAGE 1 OF 1
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